Zobrazeno 1 - 10
of 166
pro vyhledávání: '"Noriaki Matsunami"'
Publikováno v:
Quantum Beam Science, Vol 8, Iss 2, p 12 (2024)
We have investigated lattice disordering of cupper oxide (Cu2O) and copper nitride (Cu3N) films induced by high- and low-energy ion impact, knowing that the effects of electronic excitation and elastic collision play roles by these ions, respectively
Externí odkaz:
https://doaj.org/article/719d6cb007f2462e9dfbc96362bfbaa3
Modification of SiO2, ZnO, Fe2O3 and TiN Films by Electronic Excitation under High Energy Ion Impact
Publikováno v:
Quantum Beam Science, Vol 5, Iss 4, p 30 (2021)
It has been known that the modification of non-metallic solid materials (oxides, nitrides, etc.), e.g., the formation of tracks, sputtering representing atomic displacement near the surface and lattice disordering are induced by electronic excitation
Externí odkaz:
https://doaj.org/article/be5887a206d24bf79408e5a462ba85ee
Publikováno v:
Atoms, Vol 9, Iss 3, p 36 (2021)
It has been observed that modifications of non-metallic solids such as sputtering and surface morphology are induced by electronic excitation under high-energy ion impact and that these modifications depend on the charge of incident ions (charge-stat
Externí odkaz:
https://doaj.org/article/aabbebd4c3ca49c2bc223c0c8b3356c6
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 478:80-84
We have measured electronic sputtering yields of SiC and KBr by high-energy ions (198 MeV Xe, 99 MeV Xe, 89 MeV Ni, 60 MeV Ar and 55 MeV Cl ions with the equilibrium charge). Employing the carbon-foil collector method, sputtered atoms in the C-foil a
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 460:185-188
We have measured the electronic sputtering yields of WO3 as a function of the film thickness. WO3 films have been prepared by thermal oxidation of W deposited on MgO substrate and the film thickness is obtained by Rutherford backscattering spectromet
Modification of SiO2, ZnO, Fe2O3 and TiN Films by Electronic Excitation under High Energy Ion Impact
Publikováno v:
Quantum Beam Science, Vol 5, Iss 30, p 30 (2021)
Quantum Beam Science
Volume 5
Issue 4
Quantum Beam Science
Volume 5
Issue 4
It has been known that the modification of non-metallic solid materials (oxides, nitrides, etc.), e.g., the formation of tracks, sputtering representing atomic displacement near the surface and lattice disordering are induced by electronic excitation
Publikováno v:
Surface and Coatings Technology. 355:84-89
We have investigated ion-impact-induced modifications of electronic- and crystalline-structures of WNxOy polycrystalline films on C-plane-cut-sapphire (C-Al2O3) substrate. Rutherford backscattering spectroscopy (RBS) of 1.8 MeV He+ ions leads to the
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 435:146-151
We have investigated ion irradiation effects on modifications of electronic- and atomic-structures of WNxOy films on C-plane-cut-sapphire (C-Al2O3) substrate. Rutherford backscattering spectroscopy (RBS) of 1.8 MeV He+ ions leads to the composition,
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 435:142-145
For better understanding of electronic excitation effects on materials with small bandgap, we have extended measurements to Fe2O3 (hematite) films. Applying carbon-foil (100 nm)-collector method, we have measured amounts of Fe in the C-collector as a
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 409:272-276
We have studied disordering or atomic structure modification of ultra thin WO 3 films under impact of high-energy ions with non-equilibrium and equilibrium charge incidence, by means of X-ray diffraction (XRD). WO 3 films were prepared by thermal oxi