Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Noreen Harned"'
Autor:
Daniel J. Riggs, Rick Sandstrom, Slava Rokitski, Igor V. Fomenkov, Yezheng Tao, Rob Rafac, Christian Wagner, Norbert R. Bowering, Wayne J. Dunstan, Georgiy O. Vaschenko, Noreen Harned, Ron Kool, Hans Meiling, Alexander Schafgans, Alberto Pirati, Matthew J. Graham, Nigel R. Farrar, Daniel J. W. Brown, David C. Brandt, Michael Purvis, Alex I. Ershov
Publikováno v:
SPIE Proceedings.
This paper describes the development and evolution of the critical architecture for a laser-produced-plasma (LPP) extreme-ultraviolet (EUV) source for advanced lithography applications in high volume manufacturing (HVM). In this paper we discuss the
Autor:
Christian Wagner, Jo Finders, Milos Popadic, Sjoerd Lok, Koen de Peuter, Arthur Winfried Eduardus Minnaert, Rudy Peeters, Nigel R. Farrar, Chris de Ruijter, Roderik van Es, Alexander Schafgans, Daniel J. W. Brown, Ron Kool, Noreen Harned, Herman Boom, Eelco van Setten, Jörg Mallmann, Martin Lin, Martijn van Noordenburg, Daniel Smith, Frank Y. S. Chuang, Alberto Pirati, Roger Huang, Marcel Beckers, Judon Stoeldraijer, David C. Brandt, Carmen Zoldesi, Hans Meiling
Publikováno v:
SPIE Proceedings.
Multiple NXE:3300 are operational at customer sites. These systems, equipped with a Numerical Aperture (NA) of 0.33, are being used by semiconductor manufacturers to support device development. Full Wafer Critical Dimension Uniformity (CDU) of 1.0 nm
Autor:
Rudy Peeters, Joerg Mallman, Noreen Harned, Guido Schiffelers, Judon Stoeldraijer, David C. Brandt, Martijn van Noordenburg, Peter Kuerz, Herman Boom, Hans Meiling, Igor V. Fomenkov, Nigel Farrar, Alberto Pirati, Ron Kool, Sjoerd Lok, Eelco van Setten, Martin Lowisch
Publikováno v:
SPIE Proceedings.
The first NXE3300B systems have been qualified and shipped to customers. The NXE:3300B is ASML’s third generation EUV system and has an NA of 0.33. It succeeds the NXE:3100 system (NA of 0.25), which has allowed customers to gain valuable EUV exper
Autor:
Nigel R. Farrar, David C. Brandt, Rudy Peeters, David W. Myers, Daniel J. W. Brown, Robert J. Rafac, Norbert R. Bowering, Robert Kazinczi, Daniel Smith, Noreen Harned, Silvia De Dea, Daniel J. Riggs, Bruno La Fontaine, Igor V. Fomenkov, Michael Purvis, Alex I. Ershov, Hans Meiling, Alberto Pirati
Publikováno v:
SPIE Proceedings.
This paper describes the development of a laser-produced-plasma (LPP) extreme-ultraviolet (EUV) source for advanced lithography applications in high volume manufacturing. EUV lithography is expected to succeed 193nm immersion double patterning techno
Autor:
Rudy Peeters, Silvia De Dea, David C. Brandt, Robert J. Rafac, Daniel J. W. Brown, Daniel J. Riggs, Norbert R. Bowering, Alex I. Ershov, Hans Meiling, Robert Kazinczi, Alberto Pirati, David W. Myers, Noreen Harned, Daniel Smith, Igor V. Fomenkov, Bruno La Fontaine, Nigel R. Farrar
Publikováno v:
SPIE Proceedings.
Laser produced plasma (LPP) light sources have been developed as the primary approach for EUV scanner imaging of circuit features in sub-20nm devices in high volume manufacturing (HVM). This paper provides a review of development progress and readine
Autor:
Noreen Harned, Christian Wagner
Publikováno v:
Nature Photonics. 4:24-26
Extreme ultraviolet lithography extends photolithography to much shorter wavelengths and is a cost-effective method of producing more-advanced integrated circuits. Although some infrastructure challenges still remain, this technology is expected to b
Autor:
Brid Connolly, Norihito Fukugami, Shinpei Kondo, Jun Kotani, Tomohiro Imoto, Dries van Gestel, Dorothe Oorschot, David Rio, Robert de Kruif, Noreen Harned, John Zimmerman, Hiroaki Morimoto, Natalia Davydova, Yo Sakata
Publikováno v:
SPIE Proceedings.
The image border is a pattern free dark area around the die on the photomask serving as transition area between the parts of the mask that is shielded from the exposure light by the Reticle Masking (ReMa) blades and the die. When printing a die at de
Autor:
David Ockwell, Robert Kazinczi, Ron Kool, Rudy Peeters, Noreen Harned, Judon Stoeldraijer, Henk Meijer, Jan-Willem van der Horst, Peter Kuerz, Sjoerd Lok, Guido Schiffelers, Richard Droste, Erwin Antonius Martinus Van Alphen, Martin Lowisch, Hans Meiling, Eelco van Setten
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IV.
All six NXE:3100, 0.25 NA EUV exposure systems are in use at customer sites enabling device development and cycles of learning for early production work in all lithographic segments; Logic, DRAM, MPU, and FLASH memory. NXE EUV lithography has demonst
Autor:
Ad Lammers, John Zimmerman, Robert de Kruif, Norihito Fukugami, Eelco van Setten, Shinpei Kondo, Brid Connolly, Vicky Philipsen, Natalia Davydova, Vidya Vaenkatesan, Noreen Harned
Publikováno v:
SPIE Proceedings.
There are multiple mask parameters that can be tuned to optimize the lithographic performance of the EUV photo mask[1]. One of them is the absorber height. A reduction of the absorber height allows, for example, a higher resolution patterning on mask
Autor:
John Zimmerman, Eelco van Setten, Natalia Davydova, Karolien Mehagnoul, Franklin Kalk, Noreen Harned, Brid Connolly, Robert de Kruif
Publikováno v:
SPIE Proceedings.
EUV lithography requires an exposure system with complex reflective optics and an equally complex EUV dedicated reflective mask. The required high level of reflectivity is obtained by using multilayers. The multilayer of the system optics and the mas