Výsledky vyhledávání - "Norasmahan Muridan"

Effect of polarization adjustment towards the performance of SOA-based multiwavelength fiber laser

Autor: Fairuz Abdullah, Nelidya Md Yusoff, Norasmahan Muridan, Abdul Hadi Sulaiman

Publikováno v: Optik. 242:167007

We investigate the performance of multiwavelength fiber laser (MWFL) at six simultaneous angle settings of half wave plate (HWP) and quarter wave plate (QWP) using two different types of semiconductor optical amplifiers (SOAs): a booster amplifier an

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bbfc677b3a315d1d904691ba7a7e41a7
https://doi.org/10.1016/j.ijleo.2021.167007

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Radiation Damage Study of Electrical Properties in GaN LEDs Diode after Electron Irradiation

Autor: Norasmahan Muridan, Yusof Abdullah, Nurul Fadzlin Hasbullah, Anati Syahirah Hedzir, Cik Rohaida Che Hak, Sarimah Mahat

Publikováno v: Materials Science Forum. 888:348-352

Nitride-based light emitting diodes (LEDs) is an attractive material due to its high temperature tolerance and suitable to be used in extreme environment. The irradiation process of Gallium Nitride (GaN) diode was carried out by electron irradiation

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::48fcabd73b3191e7d540e2ac908ce836
https://doi.org/10.4028/www.scientific.net/msf.888.348

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Sensing texture using an artificial finger and a data analysis based on the standard deviation

Autor: Norasmahan Muridan, Neil M. White, Paul H. Chappell, Andy Cranny, N. Hazrin H. Mohamad Hanif

Publikováno v: IET Science, Measurement & Technology. 9:998-1006

The results from experiments with a screen-printed piezoelectric sensor, mounted on an artificial finger-tip and including a cosmetic covering, are shown to detect surface information from regular texture patterns. For the automatic control of an art

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1f6c27c012fd7279576763b67ae69a3d
https://doi.org/10.1049/iet-smt.2015.0003

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Effects of electron radiation on commercial power MOSFET with buck converter application

Autor: Dhiyauddin Ahmad Fauzi, Norasmahan Muridan, Sheik Fareed Ookar Abubakkar, Yusof Abdullah, Nurul Fadzlin Hasbullah, Nor Farahidah Za'bah

Publikováno v: Nuclear Science and Techniques. 28

Microelectronic power converters such as buck and boost converter are required to be tolerant to radiations including electron radiation. This paper examines electron radiation effects on the I–V characteristics of VDMOSFET and its corresponding ef

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9c2b580fa1bfc4bbad65b7352d074b38
https://doi.org/10.1007/s41365-017-0189-8

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A review of leakage current mechanism in nitride based light emitting diode

Autor: Nurul Fadzlin Hasbullah, Anati Syahirah Hedzir, Norasmahan Muridan

Publikováno v: Malaysian Journal of Fundamental and Applied Sciences. 12

We review the dominant mechanism and characteristics of it which gave rise to the existence of forward and reverse leakage current in nitride based light emitting diode (LED). LED is one of the promising device to be used as a lighting source because

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::334fe8792c0389059027795285e9d269
https://doi.org/10.11113/mjfas.v12n2.412

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Electrical Characterization of Commercial GaN LEDs Subjected to Electron Radiation with Different Conveyor Speed per Pass

Autor: Yusof Abdullah, Anati Syahirah Hedzir, Norasmahan Muridan, Nurul Fadzlin Hasbullah

Publikováno v: 2016 International Conference on Computer and Communication Engineering (ICCCE).

Commercially fabricated nitride-based light emitting diodes (LEDs) is of interest due to its attractive material properties of high temperature tolerance and breakdown strength, making it suitable to be used in extreme environment. Hence, our focus i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c09f35d87b3fdc5313c2f15120e3ab7a
https://doi.org/10.1109/iccce.2016.85

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Impact of High Electron Radiation on Electrical properties of 4H-Silicon Carbide Schottky Diodes

Autor: Cik Rohaida Che Hak, Sabuhi Ganiyev, Norasmahan Muridan, Yusof Abdullah, Nurul Fadzlin Hasbullah

Publikováno v: International Journal of Current Research in Science, Engineering & Technology. 1:251

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f3b2d8c4fc50381c335f36427790f4e3
https://doi.org/10.30967/ijcrset.1.s1.2018.251-255

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Electrical simulation of Ni/4H-SiC Schottky diodes before and after low energy electron radiation

Autor: Norasmahan Muridan, Yusof Abdullah, Nurul Fadzlin Hasbullah, Sabuhi Ganiyev

Publikováno v: 2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM).

In this paper simulation on the effects of low energy electron radiation and high temperature on the current-voltage (I-V) characteristics of Ni/4H-SiC Schottky diode were investigated. I-V characteristics of the Ni/4H-SiC Schottky diode were simulat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::14ad72e19a457cf0740dbd394cd26161
https://doi.org/10.1109/rsm.2015.7354995

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