Zobrazeno 1 - 10
of 64
pro vyhledávání: '"Nonna V. Zotova"'
Autor:
N. M. Stus, A. Yu. Rybal’chenko, Nonna V. Zotova, B. A. Matveev, M. A. Remennyy, S. A. Karandashev
Publikováno v:
Semiconductors. 45:543-549
Current-voltage characteristics of surface-irradiated photodiodes based on the InAsSbP/InAs structures are analyzed using experimental data on the distribution of electroluminescence intensity over the diode surface and taking into account thickening
Autor:
Nonna V. Zotova, N. M. Stus, Anton E. Chernyakov, A. L. Zakheim, M. A. Remennyi, N. D. Il’inskaya, S. A. Karandashev, A. A. Usikova, B. A. Matveev
Publikováno v:
Semiconductors. 43:508-513
Spectral, current-voltage, and light-current characteristics of p-InAsSbP/n-InGaAsSb/n+-InAs narrow-gap diode structures with 130 × 130 μm lateral dimensions of active elements are presented. The 2D distribution of light emitted by the samples fabr
Autor:
B. A. Matveev, A. L. Zakhgeim, M. A. Remennyi, Anton E. Chernyakov, N. M. Stus, Nonna V. Zotova, N. D. Il’inskaya, S. A. Karandashev
Publikováno v:
Semiconductors. 43:394-399
Equilibrium and nonequilibrium IR images of p-InAsSbP/n-InAsSb/n +-InAs photodiodes including the images obtained in the electroluminescence and negative luminescence modes have been analyzed. The contact reflectivity has been evaluated. The influenc
Autor:
Nonna V. Zotova, M. A. Remennyi, N. M. Stus, S. A. Karandashev, B. A. Matveev, N. D. Il’inskaya
Publikováno v:
Semiconductors
The results obtained for light-emitting diodes based on heterostructures that contain InAs in the active region and are grown by the methods of liquid-phase, molecular-beam, and vapor-phase epitaxy from organometallic compounds are reviewed. The emis
Publikováno v:
Semiconductors. 40:1393-1397
Electrical properties of GaSb epitaxial layers grown by the MOCVD method under various conditions are studied. It is shown that the morphology of the layers, free-carrier concentration, and carrier mobility depend on the molar flux ratio TMSb/TEGa. T
Autor:
N. G. Tarakanova, M. A. Remennyĭ, Nonna V. Zotova, N. D. Il’inskaya, V. V. Shustov, N. M. Stus, B. A. Matveev, S. A. Karandashev
Publikováno v:
Semiconductors. 40:977-981
Under study are the electrical and optical properties of n-InGaAsSb epitaxial layers with composition close to InAs and lattice-matched with it, fabricated on InAs substrates by LPE from Te-containing melts. The layers are transparent in the 3-μm ra
Autor:
S. A. Karandashev, N. M. Stus, Nonna V. Zotova, B. A. Matveev, N. D. Il’inskaya, M. A. Remennyi
Publikováno v:
Semiconductors. 40:697-703
The spectral, current-voltage, and emission-current characteristics under forward and reverse biases, and the near-field emission pattern of flip-chip LEDs based on heterostructures with an InAsSb active layer (emission wavelength of 4.2 µm at 300 K
Publikováno v:
physica status solidi (c). 2:927-930
The paper presents results on spectral and power measurements in InAsSbP/InAs double heterostructure flip-chip LEDs with cavity formed by bottom anode mirror and air/semiconductor interface in the temperature range of 77–573 K. Data on near and far
Autor:
V. O. Naidenov, N. A. Voronova, S. A. Karandashev, B. A. Matveev, G. M. Gusinskii, N. M. Stus, M. A. Remennyi, Nonna V. Zotova
Publikováno v:
Technical Physics Letters. 30:15-18
Proton irradiation of undoped n-InAs allowed a compensated material to be obtained with the degree of compensation K∼0.6. A regime of irradiation was selected to provide for a uniform distribution of radiation defects in depth of the semiconductor
Autor:
M. A. Remennyi, G. N. Talalakin, N. M. Stus, B. A. Matveev, S. A. Karandashev, Nonna V. Zotova
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 20:548-552
An As 2 S 3 fiber coupled to an InGaAsSb photodiode was used to record the radiation distribution over the emitting surface in InGaAsSb episide-down-bonded negative luminescence devices (λ = 3.9 μm). Emission spectra were recorded under forward and