Zobrazeno 1 - 10
of 12 845
pro vyhledávání: '"Non-Volatile Memory"'
Autor:
Arpita Roy, Subhendu Dhibar, Saurav Kumar, Kripasindhu Karmakar, Parul Garg, Pradip Ruidas, Subham Bhattacharjee, Ashok Bera, Bidyut Saha, Soumya Jyoti Ray
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-15 (2024)
Abstract A highly efficient approach for synthesizing a supramolecular metallogel of Co(II) ions, denoted as CoA-TA, has been established under room temperature and atmospheric pressure conditions. This method employs the metal-coordinating organic l
Externí odkaz:
https://doaj.org/article/98d91cb4da8144eba3403085cf5de1d0
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-10 (2024)
Abstract BiFeO3 (BFO) application in flexible wearable devices is garnering interest because of its unique ferroelectric and magnetic properties. However, the integration of high-quality BFO films onto flexible substrates presents significant technic
Externí odkaz:
https://doaj.org/article/642915fbf1a742e2b46fddf9b42bc2de
Publikováno v:
Jisuanji kexue yu tansuo, Vol 18, Iss 10, Pp 2690-2703 (2024)
Taking advantage of green energy is becoming increasingly popular. However, when it comes to the storage I/O, where storage devices usually schedule nodes based on the intensity of the storage workload, the irregular fluctuations of green energy lead
Externí odkaz:
https://doaj.org/article/ed8d4d818f724f5ea9d40c8759c90518
Publikováno v:
大数据, Vol 10, Pp 34-50 (2024)
The compression strategy plays an important role in the performance of IoT time series data storage system.However, the current compression strategies can not adapt to the characteristics of NVM and IoT time series data.This paper proposes a polymorp
Externí odkaz:
https://doaj.org/article/96c162386e4644f1969ba40b8d45a66e
Publikováno v:
IEEE Access, Vol 12, Pp 16598-16609 (2024)
Spin Transfer Torque Random Access Memory (STT-RAM) is an emerging Non-Volatile Memory (NVM) technology that has garnered attention to overcome the drawbacks of conventional CMOS-based technologies. However, such technologies must be evaluated before
Externí odkaz:
https://doaj.org/article/bcee21528a994e93be6e63c8fb8597cf
Publikováno v:
IEEE Access, Vol 12, Pp 7224-7243 (2024)
As the current primary memory technology is reaching its limits, it is essential to explore alternative memory technologies to accommodate modern applications and use cases. However, using new memory technology poses the challenge of deriving accurat
Externí odkaz:
https://doaj.org/article/0e9a4d73f766454cb3c0243905974ffc
Autor:
Zihao Zhao, Sergiu Clima, Daniele Garbin, Robin Degraeve, Geoffrey Pourtois, Zhitang Song, Min Zhu
Publikováno v:
Nano-Micro Letters, Vol 16, Iss 1, Pp 1-40 (2024)
Highlights The development history and key milestones of ovonic threshold switch (OTS) materials were comprehensively summarized. Combined with the latest advancements of OTS research, the mainstream OTS material systems were systematically introduce
Externí odkaz:
https://doaj.org/article/6d57ab596d434b82b11d3a03679191c0
Publikováno v:
Iranian Journal of Electrical and Electronic Engineering, Vol 19, Iss 4, Pp 171-180 (2023)
In light of the growing prevalence of Internet of Things (IoT) devices, it has become essential to incorporate cryptographic protection techniques for high-security applications. Since IoT devices are resource-constraints in terms of power and area,
Externí odkaz:
https://doaj.org/article/2f4198466b4f4730b6df7a0183a072d9
Publikováno v:
Micromachines, Vol 15, Iss 10, p 1222 (2024)
The rapid advancement of artificial intelligence (AI) technology, combined with the widespread proliferation of Internet of Things (IoT) devices, has significantly expanded the scope of AI applications, from data centers to edge devices. Running AI a
Externí odkaz:
https://doaj.org/article/a58b74efe88a45399405d7a0d1372247
Autor:
Anastasia Chouprik, Vitalii Mikheev, Ilya Margolin, Elizaveta Kalika, Maxim Spiridonov, Dmitrii Negrov
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 5, Pp n/a-n/a (2024)
Abstract Next‐generation flexible electronics for healthcare applications require biocompatible flexible non‐volatile memory for data storage. Ultra‐thin ferroelectric hafnium oxide films offer great potential for flexible memories due to their
Externí odkaz:
https://doaj.org/article/6ac37c17cb4840a3a608c57fc6004169