Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Nomin Lim"'
Publikováno v:
Plasma Chemistry and Plasma Processing. 41:1671-1689
In this work, we performed the comparative study of plasma parameters, steady-state gas phase compositions and Si reactive-ion etching kinetics in CF4 + O2 + Ar, CHF3 + O2 + Ar and C4F8 + O2 + Ar gas mixtures with variable O2/Ar component ratios. It
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2345d6e70e48155457c20c80d505b558
https://doi.org/10.1007/s11090-021-10198-z
https://doi.org/10.1007/s11090-021-10198-z
Publikováno v:
Plasma Chemistry and Plasma Processing. 40:625-640
The investigation of etching kinetics and surface conditions for KNbxOy thin films in CF4 + Ar and Cl2 + Ar inductively coupled plasmas was carried out. The variable processing parameters were Ar content in a feed gas (0–75% Ar), gas pressure (4–
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5f761d63e3b30d1092f554836ffe484
https://doi.org/10.1007/s11090-020-10064-4
https://doi.org/10.1007/s11090-020-10064-4
Gas-phase chemistry and etching mechanism of SiNx thin films in C4F8 + Ar inductively coupled plasma
Publikováno v:
Thin Solid Films. 685:97-107
In this study, we investigated the etching characteristics of non-stoichiometric SiNx thin films in C4F8 + Ar inductively coupled rf (13.56 MHz) plasma. The SiNx etching rates together with SiNx/Si and SiNx/SiO2 etching selectivities were measured as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c08b8bc83295930444f564ebd76c0c88
https://doi.org/10.1016/j.tsf.2019.05.066
https://doi.org/10.1016/j.tsf.2019.05.066
Autor:
Yunsung Cho, Jeong-Su Kim, Nomin Lim, Young Hwan Kim, Kwang-Ho Kwon, Il Ki Han, Yeon-Ho Im, Hyun Woo Lee
Publikováno v:
Vacuum. 166:45-49
We present a study that shows the independent influence of abnormal ion trajectories in the etched hole profile on thick dielectrics used in micro-electro mechanical system (MEMS) fabrication under fluorocarbon plasma. Under fixed neutral and ion flu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e48b0f22acba8327d3d2aa8a0c080a70
https://doi.org/10.1016/j.vacuum.2019.04.054
https://doi.org/10.1016/j.vacuum.2019.04.054
Publikováno v:
Plasma Processes and Polymers. 19:2100129
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3df515e4e48bfe1a32688c2067b9e417
https://doi.org/10.1002/ppap.202100129
https://doi.org/10.1002/ppap.202100129
Publikováno v:
Thin Solid Films. 637:27-31
We herein report our investigation into the effect of plasma-induced surface modification of a polyethylene terephthalate (PET) surface on the output performance of a triboelectric generator (TEG). The PET surface was subjected to plasma treatment us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a02a19572c1e210361d7ecfcccd40bd
https://doi.org/10.1016/j.tsf.2017.03.034
https://doi.org/10.1016/j.tsf.2017.03.034
Publikováno v:
Vacuum. 186:110043
The comparative study of Cl2 + O2 and HBr + O2 plasma chemistries in respect to Si reactive-ion etching process was carried out. Both plasma diagnostics and modeling tools were applied to compare effects of gas mixing ratios on steady-state plasma pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87c611d3a6a90caca7f966e526f6e511
https://doi.org/10.1016/j.vacuum.2020.110043
https://doi.org/10.1016/j.vacuum.2020.110043
Publikováno v:
Materials
Materials, Vol 14, Iss 1595, p 1595 (2021)
Volume 14
Issue 7
Materials, Vol 14, Iss 1595, p 1595 (2021)
Volume 14
Issue 7
This research work deals with the comparative study of C6F12O + Ar and CF4 + Ar gas chemistries in respect to Si and SiO2 reactive-ion etching processes in a low power regime. Despite uncertain applicability of C6F12O as the fluorine-containing etcha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4619a2f3b3a9d6f3951d9cb84dd01bdb
https://doi.org/10.3390/ma14071595
https://doi.org/10.3390/ma14071595
Publikováno v:
Journal of Nanoscience and Nanotechnology. 15:8340-8347
An investigation of the etching characteristics and mechanism for both Si and SiO2 in CF4/C4F8/Ar inductively coupled plasmas under a constant gas pressure (4 mTorr), total gas flow rate (40 sccm), input power (800 W), and bias power (150 W) was perf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::72454d0a603095565151de664f3c896e
https://doi.org/10.1166/jnn.2015.11256
https://doi.org/10.1166/jnn.2015.11256
Publikováno v:
Journal of Nanoscience and Nanotechnology. 14:9670-9679
The study of etching characteristics and mechanisms for HfO2 and Si in CF4/O2/Ar and CHF3/O2/Ar inductively-coupled plasmas was carried out. The etching rates of HfO2 thin films as well as the HfO2/Si etching selectivities were measured as functions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfcb1400495fee703e11a02e64bd5b2c
https://doi.org/10.1166/jnn.2014.10171
https://doi.org/10.1166/jnn.2014.10171