Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Nomi L A N, Sorgenfrei"'
Autor:
Erika Giangrisostomi, Ruslan Ovsyannikov, Robert Haverkamp, Nomi L. A. N. Sorgenfrei, Stefan Neppl, Hikmet Sezen, Fredrik O. L. Johansson, Svante Svensson, Alexander Föhlisch
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 32, Pp n/a-n/a (2023)
Abstract Synthetic single crystals of bulk molybdenum disulphide cleaved in ultrahigh vacuum are mapped across a large (≈25 mm2) area by X‐ray photoelectron spectroscopy, both statically and transiently following above‐bandgap excitation by an
Externí odkaz:
https://doaj.org/article/0d75f35103424972a1009dc94b164ce6
Autor:
Robert Haverkamp, Nomi L. A. N. Sorgenfrei, Erika Giangrisostomi, Stefan Neppl, Danilo Kühn, Alexander Föhlisch
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-7 (2021)
Abstract The layered dichalcogenide MoS $$_{2}$$ 2 is relevant for electrochemical Li adsorption/intercalation, in the course of which the material undergoes a concomitant structural phase transition from semiconducting 2H-MoS $$_{2}$$ 2 to metallic
Externí odkaz:
https://doaj.org/article/622e1a9ab82348c59f77e22d7c2fc629
Autor:
Michelle Marie S, Villamayor, Sajid, Husain, Reinier, Oropesa-Nuñez, Fredrik O L, Johansson, Rebecka, Lindblad, Pedro, Lourenço, Romain, Bernard, Nadine, Witkowski, Geoffroy, Prévot, Nomi L A N, Sorgenfrei, Erika, Giangrisostomi, Alexander, Föhlisch, Peter, Svedlindh, Andreas, Lindblad, Tomas, Nyberg
Publikováno v:
Nanoscale. 14(17)
We demonstrate that tungsten disulphide (WS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::d39628aec1c6aceb85db2994f2c61c79
https://pubmed.ncbi.nlm.nih.gov/35297938
https://pubmed.ncbi.nlm.nih.gov/35297938
Autor:
Michelle Marie S. Villamayor, Sajid Husain, Reinier Oropesa-Nuñez, Fredrik O. L. Johansson, Rebecka Lindblad, Pedro Lourenço, Romain Bernard, Nadine Witkowski, Geoffroy Prévot, Nomi L. A. N. Sorgenfrei, Erika Giangrisostomi, Alexander Föhlisch, Peter Svedlindh, Andreas Lindblad, Tomas Nyberg
We demonstrate that tungsten disulphide (WS2) with thicknesses ranging from monolayer (ML) to several monolayers can be grown on SiO2/Si, Si, and Al2O3 by pulsed direct current-sputtering. The presence of high quality monolayer and multilayered WS2 o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::05a85ba05ebaa984d8801af189b2c6d2
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-484453
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-484453
Autor:
Tuan T. Tran, Daniel Primetzhofer, Nomi L. A. N. Sorgenfrei, Andreas Lindblad, Alexander Föhlisch, Tomas Nyberg, Geoffroy Prévot, Pedro Lourenço, Fredrik Johansson, Erika Giangrisotomi, Ngan Hoang Pham, Romain Bernard, Nadine Witkowski, Michelle Marie S. Villamayor
Publikováno v:
Vacuum
Vacuum, Elsevier, 2021, 188, pp.110205. ⟨10.1016/j.vacuum.2021.110205⟩
Vacuum, Elsevier, 2021, 188, pp.110205. ⟨10.1016/j.vacuum.2021.110205⟩
International audience; We have deposited WS2 thin films on Si, SiO2/Si, and sapphire substrates by reactive sputtering from a WS2 target in an Ar/H2S atmosphere. We demonstrate that it is possible to deposit (001)-textured tungsten sulfide films tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::10b7f838b359cb05c4dabad9cc984b87
https://hal.sorbonne-universite.fr/hal-03238463
https://hal.sorbonne-universite.fr/hal-03238463
Autor:
Erika Giangrisostomi, Stefan Neppl, Alexander Föhlisch, Danilo Kühn, Robert Haverkamp, Nomi L. A. N. Sorgenfrei
The layered dichalcogenide MoS$$_{2}$$ 2 is relevant for electrochemical Li adsorption/intercalation, in the course of which the material undergoes a concomitant structural phase transition from semiconducting 2H-MoS$$_{2}$$ 2 to metallic 1T-Li$$_{\m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::55dd8642e6b0e7da021807e619b198cd
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=103796
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=103796
Autor:
Erika Giangrisostomi, Hikmet Sezen, Ruslan Ovsyannikov, Stefan Neppl, Svante Svensson, Raphael M. Jay, Danilo Kühn, Alexander Föhlisch, Nomi L. A. N. Sorgenfrei
Visible light is shown to create a transient metallic S Mo S surface layer on bulk semiconducting p doped indirect bandgap 2H MoS2. Optically created electron hole pairs separate in the surface band bending region of the p doped semiconducting crysta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::425ee2026564c3cc65da1092f81974bb
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-446630
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-446630
Autor:
Raphael M. Jay, Stefan Neppl, Erika Giangrisostomi, Alexander Föhlisch, Svante Svensson, Danilo Kühn, Ruslan Ovsyannikov, Nomi L. A. N. Sorgenfrei, Hikmet Sezen
Publikováno v:
Advanced Materials. 33:2170108
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2c1a5941d88a1f61fad9e76e9fab924
https://doi.org/10.1002/adma.202170108
https://doi.org/10.1002/adma.202170108