Zobrazeno 1 - 10
of 20 136
pro vyhledávání: '"Noise figure"'
An Approach to Determine Noise Model Parameter for Submicron MOSFET from RF Noise Figure Measurement
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 692-697 (2024)
An extraction method to obtain the noise model parameter $T_{\mathrm { d}}$ in deep submicron MOSFETs directly from radio frequency (RF) scattering parameters and noise figure measurements is presented. A simplified noise equivalent circuit, along wi
Externí odkaz:
https://doaj.org/article/02b55cebd8d141a9b12ea111a5698449
Autor:
Mohammad Zaid, Purnima Kumari, Ahtisham Pampori, Mohammad Sajid Nazir, Umakant Goyal, Meena Mishra, Yogesh Singh Chauhan
Publikováno v:
IEEE Access, Vol 12, Pp 53475-53484 (2024)
This study introduces a new design for a low noise amplifier (LNA) consisting of two stages taking advantage of the inherent lossy properties of the input matching components. By doing this, the design balances the minimum noise figure (NF) and stabi
Externí odkaz:
https://doaj.org/article/6019274196c441698eb6cda5a5392b9b
Publikováno v:
IEEE Open Journal of Circuits and Systems, Vol 5, Pp 92-101 (2024)
This paper reports a wideband blocker-tolerant receiver (RX) that covers a 0.5-to-2 GHz radio frequency (RF) range. By combining the gain-boosted (GB) mixer-first low-noise amplifier (LNA) network with a bottom-plate switched-capacitor (SC) N-path fi
Externí odkaz:
https://doaj.org/article/78aeca8e621f46cfa8949b6ba93e6175
Autor:
Howie Tseng, Yueh-Chin Lin, Chieh Cheng, Po-Wei Chen, Heng-Tung Hsu, Yi-Fan Tsao, Edward Yi Chang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 268-274 (2024)
In this study, AlGaN/GaN high-electron-mobility-transistor (HEMT) with thick Cu metallization is investigated, and the Radio Frequency (RF) performance and the reliability are analyzed. By applying thick Cu metallization of $6.0 ~\mu \text{m}$ as int
Externí odkaz:
https://doaj.org/article/82a72b4f519240c1b0f2654aa4860ff0
Publikováno v:
e-Prime: Advances in Electrical Engineering, Electronics and Energy, Vol 8, Iss , Pp 100559- (2024)
The rapid evolution of wireless communication systems towards 5G standards has imposed stringent requirements on the performance of radio frequency front-end components. Among these, the Low-Noise Amplifier (LNA) plays a pivotal role in determining t
Externí odkaz:
https://doaj.org/article/5f981451f5fb44038ef7aadd4f4fb269
Autor:
Yeang, Chen-Pang, author
Publikováno v:
Transforming Noise : A History of Its Science and Technology from Disturbing Sounds to Informational Errors, 1900-1955, 2023, ill.
Externí odkaz:
https://doi.org/10.1093/oso/9780198887768.003.0006
Autor:
Jose Luis Jimenez-Martin, Vicente Gonzalez-Posadas, Angel Parra-Cerrada, David Espinosa-Adams, Daniel Segovia-Vargas, Wilmar Hernandez
Publikováno v:
Sensors, Vol 24, Iss 10, p 3141 (2024)
A broadband differential-MMIC low-noise amplifier (DLNA) using metamorphic high-electron-mobility transistors of 70 nm in Gallium Arsenide (70 nm GaAs mHEMT technology) is presented. The design and results of the performance measurements of the DLNA
Externí odkaz:
https://doaj.org/article/a9ade9019cf04558aeaca1a02866b9d8
Autor:
Ping-Hsun Lee, Yueh-Chin Lin, Heng-Tung Hsu, Cheng-Hsien Yu, Yi-Fan Tsao, Pin Su, Edward Yi Chang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 744-751 (2023)
In this research, $\Gamma $ -gated AlGaN/GaN HEMTs with different layout designs and heights of gate stems were fabricated to investigate their impacts on the noise performance in the Ka-band. First, devices with 4 types of gate peripheries were prep
Externí odkaz:
https://doaj.org/article/243c09fae0f740d8b4ca35d1e15fefa8
Autor:
Weizhu Ji, Jianxiang Wen, Yanhua Dong, Junnan Zhang, Xiuxiu Chen, Yan Chen, Zexin Zheng, Tingyun Wang
Publikováno v:
IEEE Photonics Journal, Vol 15, Iss 2, Pp 1-8 (2023)
We investigate the spectral and amplification characteristics of Bi/Er co-doped fiber (BEDF) and Er-doped fiber (EDF), prepared by atomic layer deposition (ALD). BEDF features a noise figure (NF) below 5.2 dB, the bandwidth with NF less than 4 dB is
Externí odkaz:
https://doaj.org/article/924e5789c4124243a8ba5899a97bc3b6
Publikováno v:
IEEE Photonics Journal, Vol 15, Iss 1, Pp 1-10 (2023)
We present an experimental system study of the influence of cryogenic temperatures on the performance of a commercial Semiconductor Optical Amplifier (SOA) over the range 240 K – 70 K. Significant performance improvements were observed when the SOA
Externí odkaz:
https://doaj.org/article/642dc4b376aa4e58bf51fc71d154848e