Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Noha Shaarawy"'
Autor:
Ahmed Emara, Ahmed G. Radwan, Noha Shaarawy, Mohammed E. Elbtity, Maged Ghoneima, A.M. El-Naggar
Publikováno v:
Microelectronics Journal. 73:75-85
In this paper, a Static Noise Margin (SNM) analysis for 2T2M RRAM cell is investigated. The proposed analysis is done using mathematical formulation and verified by SPICE simulations. The analysis is tested for both, write and read modes. Moreover, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5415f49364dd54620620af9565c20ac9
https://doi.org/10.1016/j.mejo.2018.01.001
https://doi.org/10.1016/j.mejo.2018.01.001
Publikováno v:
ISCAS
This paper introduces a novel 2T2M memristor based memory cell which, offers higher stability and noise margins than previous works. The proposed 2T2M RRAM module is similar to conventional 6T SRAM module in terms of delay and number of interface pin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1f3f56d708d72f99013516d48cec21f
https://doi.org/10.1109/iscas.2015.7168909
https://doi.org/10.1109/iscas.2015.7168909
Publikováno v:
2015 IEEE International Symposium on Circuits & Systems (ISCAS); 2015, p1418-1421, 4p