Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Noh-Jung Kwak"'
Autor:
Woo Sik Yoo, Min Sung Ko, Noh Jung Kwak, Chun Ho Kang, Chul Young Ham, Sung Chul Shin, Sung Gi Park, Chul Woo Park, Byung-Seok Lee, Noh Yeal Kwak, Seung Jin Yeom
Publikováno v:
MRS Advances. 1:339-348
Feasibility of multiwavelength Raman spectroscopy was studied as a potential in-line monitoring technique for grain size distribution in channel poly-Si used in three dimensional stacked NAND (3D NAND) Flash memory devices. Various channel poly-Si ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c456e7a9d3e1e0992759a73b69c37bba
https://doi.org/10.1557/adv.2016.1
https://doi.org/10.1557/adv.2016.1
Autor:
Seung-Jin Yeom, Kyung-Woong Park, Cheol Hwan Park, Ho Jin Cho, Ji-Hoon Ahn, Kwon Hong, Noh-Jung Kwak, Hyunchol Cho
Publikováno v:
Materials Letters. 154:148-151
Thin ZrO2/Ta2O5 multi-laminate films were grown by atomic layer deposition and the relation between their dielectric and chemical properties was investigated. Metallic Ta is strongly reduced at the interface between ZrO2 and Ta2O5, probably during th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4402cccdf70e0f1cae3924a4052cdb94
https://doi.org/10.1016/j.matlet.2015.04.082
https://doi.org/10.1016/j.matlet.2015.04.082
Autor:
Kyung-Woong Park, Cheol Hwan Park, S J Yeom, Kwon Hong, Ho Jin Cho, Ji-Hoon Ahn, Hyunchol Cho, Noh-Jung Kwak
Publikováno v:
ECS Transactions. 61:21-25
Thin ZrO2/Ta2O5 multi-laminate layer of ~10 nm was grown by atomic layer deposition (ALD) method and it was discussed about the metallic Ta reduction at the interface between ZrO2 and Ta2O5. Metallic Ta 4f7/2 peak was observed inside of the layer fro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73906f55f304a50db8f7d3a2e819d9a3
https://doi.org/10.1149/06102.0021ecst
https://doi.org/10.1149/06102.0021ecst
Autor:
Jongsu Lee, Steven Welch, Byounghoon Lee, Giacomo Miceli, Rui Zhang, Jin-Moo Byun, Stefan Geerte Kruijswijk, Sangjun Han, Noh-Jung Kwak, Kyu-Tae Sun, Won-Kwang Ma, Thomas Theeuwes, Young-Sik Kim, Sharon Hsu, Hugo Augustinus Joseph Cramer, Baukje Wisse, Yvon Chai, Yi Song, Alok Verma, Wei Guo
Publikováno v:
SPIE Proceedings.
Spacer multi patterning process continues to be a key enabler of future design shrinks in DRAM and NAND process flows. Improving Critical Dimension Uniformity (CDU) for main features remains high priority for multi patterning technology and requires
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::722c7c1779e899d45577382faa799c83
https://doi.org/10.1117/12.2219664
https://doi.org/10.1117/12.2219664
Bias polarity and frequency effects of Cu-induced dielectric breakdown in damascene Cu interconnects
Autor:
Sung-Yup Jung, Noh Jung Kwak, Baek-Mann Kim, Byoung-Joon Kim, Young-Chang Joo, Seung Jin Yeom, Nam Yeal Lee
Publikováno v:
Microelectronic Engineering. 89:58-61
Cu-ion-migration-induced dielectric breakdown in damascene Cu interconnect was studied in alternating polarity-bias conditions using a metal-insulator-semiconductor (MIS) structured sample and a damascene Cu interconnect sample. Compared to a direct-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e187a02d6b1152d3baa43202f6be38ca
https://doi.org/10.1016/j.mee.2011.01.070
https://doi.org/10.1016/j.mee.2011.01.070
Autor:
Seung-Jin Yeom, Jeongsoo Park, Kyung-Bo Ko, Jung-Hak Lee, Hyun-Wook Nam, Tae-Hang Ahn, Y. Son, Ki-Sik Choi, Tae-Young Jang, Keundo Ban, Tae-O Jung, Sun-Woo Lee, Hyunjin Lee, Jae-Hwan Han, Noh-Jung Kwak, Il-Sik Jang, Byungil Kwak, Dong-Kyu Lee, Su-Bum Shin, Jin-Sung Kim, Hyung-Chul Kim, Seung-Beom Baek, Eun-Hyup Doh, Yun-Hyuck Ji, Seung-Mi Lee, Yu-Jun Lee, Jae-Sang Lee, Sung-Hyuk Cho, Mun-Mo Jeong, Dong-Kyun Kang, Sung-Kye Park, Min-Chul Sung, Se-Aug Jang, Heung-Jae Cho, Jae-Il Kang, Sung-Joo Hong, Jae-Seon Yu, Ji-Hye Han
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
It is the first time that the high-k/metal gate technology was used at peripheral transistors for fully integrated and functioning DRAM. For cost effective DRAM technology, capping nitride spacer was used on cell bit-line scheme, and single work func
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fb2c7a273825a6674cb32d752918509
https://doi.org/10.1109/iedm.2015.7409775
https://doi.org/10.1109/iedm.2015.7409775
Autor:
Seung-Jin Yeom, Gil-Ho Hwang, Seok-Jun Hong, Sung-Goon Kang, C.S. Yoon, Jae Hong Kim, Noh-Jung Kwak, Won-Kyu Han, Soo-Seok Kim
Publikováno v:
Microelectronic Engineering. 86:374-378
We have developed a novel activation technique for the conformal electroless deposition (ELD) of Cu on a SiO"2 substrate modified with an organic self-assembled monolayer. The SiO"2 substrate was modified with amine groups using 3-aminopropyltriethox
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccea3945319d3a29d790ab29168e25f0
https://doi.org/10.1016/j.mee.2008.11.024
https://doi.org/10.1016/j.mee.2008.11.024
Autor:
Soon Young Park, Sung Ki Park, Yong Soo Choi, Kee Joon Oh, Choon Kun Ryu, Jung Nam Kim, Ji Hye Han, Seung Seok Pyo, Gyu Hyun Kim, Noh Jung Kwak
Publikováno v:
Solid State Phenomena. :193-196
As a design rule of memory devices is scaled down to sub-100 nm, shallow trench isolation (STI) technology is faced with gap-filling problem in case of CVD oxide and O3-TEOS oxide processes. To overcome the gap-filling problem, a perhydropolysilazane
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07aed8189da1745b2a9d095a37931bb0
https://doi.org/10.4028/www.scientific.net/ssp.145-146.193
https://doi.org/10.4028/www.scientific.net/ssp.145-146.193
Autor:
Jinwoo Kim, Keunwoo Lee, Seung-Jin Yeom, Jeong Tae Kim, Hyeongtag Jeon, Taeyong Park, Jaesang Lee, Noh-Jung Kwak
Publikováno v:
Japanese Journal of Applied Physics. 47:5396-5399
Cobalt films were deposited by metal organic chemical vapor deposition (MOCVD) using C12H10O6(Co)2 (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) as the Co precursor and H2 reactant gas. The impurity content of the Co films was monitored as a fun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4636406277fb370eab535aca494d89d6
https://doi.org/10.1143/jjap.47.5396
https://doi.org/10.1143/jjap.47.5396
Autor:
Jung-Joon Suh, Won-Kwang Ma, Kyu-Tae Sun, David Deckers, Honggoo Lee, Kevin Ryan, Jin-Moo Byun, Sangjun Han, Kou Weitian, Paul Böcker, Michiel Kupers, Noh-Jung Kwak, Young-Sik Kim, Young-Wan Lim, Gwang-Gon Kim, Elliott McNamara
Publikováno v:
SPIE Proceedings.
As DRAM semiconductor manufacturing approaches high volume for 1x nm nodes with immersion lithography, an increased emphasis is being placed on reducing the influence of the systematic wafer-level contribution to the on-product overlay budget. The co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e06bd49bcc0a5c6e360cdc737af6d44
https://doi.org/10.1117/12.2196879
https://doi.org/10.1117/12.2196879