Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Noh‐Hwal Park"'
Autor:
An Hoang-Thuy Nguyen, Manh-Cuong Nguyen, Anh-Duy Nguyen, Seung Joon Jeon, Noh-Hwal Park, Jeong-Hwan Lee, Rino Choi
Publikováno v:
Nano Convergence, Vol 11, Iss 1, Pp 1-15 (2024)
Abstract The concept of three-dimensional stacking of device layers has attracted significant attention with the increasing difficulty in scaling down devices. Monolithic 3D (M3D) integration provides a notable benefit in achieving a higher connectio
Externí odkaz:
https://doaj.org/article/6715487770bd4c1ca5eef38c9a8113e2
Autor:
Noh-Hwal Park, Eun Sol Shin, Gi-Seong Ryu, Jimin Kwon, Dongseob Ji, Hyunjin Park, Yun Ho Kim, Yong-Young Noh
Publikováno v:
Journal of Information Display, Vol 24, Iss 2, Pp 109-118 (2023)
Single wall carbon nanotubes (SWNT) have been a significant research topic as active layers for thin film transistors (TFTs) due to their high charge carrier mobility beyond that of crystalline silicon. In this study, we report an effective approach
Externí odkaz:
https://doaj.org/article/e27a9dd0ffcc4c4c8706341d2224a1f9
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany). 18(19)
Multi-resonance (MR) thermally activated delayed fluorescent (TADF) emitters are highly attractive due to their superior color purity as well as efficient light-harvesting ability from singlets and triplets. However, boron and nitrogen-based MR-TADF
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::01eed10a5e7e8775150930f9365540b9
https://pubmed.ncbi.nlm.nih.gov/35274463
https://pubmed.ncbi.nlm.nih.gov/35274463
Autor:
Seung-Hoon Lee, Yong-Young Noh, Jang-Joo Kim, Sungmi Yoo, Dongyoon Khim, Seung-Hyeon Jeong, Noh-Hwal Park, Yun Ho Kim
Publikováno v:
Semiconductor Science and Technology. 33:035017
In this paper, we report a simple and effective method to simultaneously achieve a high charge-carrier mobility and low off current in conjugated polymer-wrapped semiconducting single-walled carbon nanotube (s-SWNT) transistors by applying a SWNT bil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23bb6511d4d01383e117bb6f37cb1dd3
https://doi.org/10.1088/1361-6641/aaad7e
https://doi.org/10.1088/1361-6641/aaad7e
Publikováno v:
Organic Electronics. 9:481-486
Air stable n-type organic field effect transistors (OFETs) based on C 60 are realized using a perfluoropolymer as the gate dielectric layer. The devices showed the field-effect mobility of 0.049 cm 2 /V s in ambient air. Replacing the gate dielectric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6afb2a76a1b63a3a7ec009885682b94
https://doi.org/10.1016/j.orgel.2008.02.011
https://doi.org/10.1016/j.orgel.2008.02.011
Autor:
Noh-Hwal Park, Seung-Hoon Lee, Seung-Hyeon Jeong, Dongyoon Khim, Yun Ho Kim, Sungmi Yoo, Yong-Young Noh, Jang-Joo Kim
Publikováno v:
Semiconductor Science & Technology; Mar2018, Vol. 33 Issue 3, p1-1, 1p