Zobrazeno 1 - 10
of 225
pro vyhledávání: '"Nogajewski, K."'
Autor:
Zinkiewicz, M., Grzeszczyk, M., Kazimierczuk, T., Bartos, M., Nogajewski, K., Pacuski, W., Watanabe, K., Taniguchi, T., Wysmołek, A., Kossacki, P., Potemski, M., Babiński, A., Molas, M. R.
Raman scattering excitation (RSE) is an experimental technique in which the spectrum is made up by sweeping the excitation energy when the detection energy is fixed. We study the low-temperature ($T$=5~K) RSE spectra measured on four high quality mon
Externí odkaz:
http://arxiv.org/abs/2308.08320
Autor:
Zinkiewicz, M., Woźniak, T., Kazimierczuk, T., Kapuściński, P., Oreszczuk, K., Grzeszczyk, M., Bartos, M., Nogajewski, K., Watanabe, K., Taniguchi, T., Faugeras, C., Kossacki, P., Potemski, M., Babiński, A., Molas, M. R.
Publikováno v:
Nano Letters 21, 2519 (2021)
We investigate the origin of emission lines apparent in the low-temperature photoluminescence spectra of $n$-doped WS$_2$ monolayer embedded in hexagonal BN layers using external magnetic fields and first-principles calculations. Apart from the neutr
Externí odkaz:
http://arxiv.org/abs/2012.11509
Autor:
Osiekowicz, M., Staszczuk, D., Olkowska-Pucko, K., Kipczak, Ł., Grzeszczyk, M., Zinkiewicz, M., Nogajewski, K., Kudrynskyi, Z. R., Kovalyuk, Z. D., Patané, A., Babiński, A., Molas, M. R.
Publikováno v:
Scientific Reports 11, 924 (2021)
The temperature effect on the Raman scattering efficiency is investigated in $\varepsilon$-GaSe and $\gamma$-InSe crystals. We found that varying the temperature over a broad range from 5 K to 350 K permits to achieve both the resonant conditions and
Externí odkaz:
http://arxiv.org/abs/2010.12891
Autor:
Zinkiewicz, M., Slobodeniuk, A. O., Kazimierczuk, T., Kapuściński, P., Oreszczuk, K., Grzeszczyk, M., Bartos, M., Nogajewski, K., Watanabe, K., Taniguchi, T., Faugeras, C., Kossacki, P., Potemski, M., Babiński, A., Molas, M. R.
Publikováno v:
Nanoscale 12, 18153 (2020)
Low temperature and polarization resolved magneto-photoluminescence experiments are used to investigate the properties of dark excitons and dark trions in a monolayer of WS$_2$ encapsulated in hexagonal BN (hBN). We find that this system is an $n$-ty
Externí odkaz:
http://arxiv.org/abs/2005.14071
Autor:
Kapuściński, P., Vaclavkova, D., Grzeszczyk, M., Slobodeniuk, A. O., Nogajewski, K., Bartos, M., Watanabe, K., Taniguchi, T., Faugeras, C., Babiński, A., Potemski, M., Molas, M. R.
Publikováno v:
Phys. Chem. Chem. Phys., 2020, 22, 19155-19161
The spectral signatures associated with different negatively charged exciton complexes (trions) in a WS$_2$ monolayer encapsulated in hBN, are analyzed from low temperature and polarization resolved reflectance contrast (RC) and photoluminescence (PL
Externí odkaz:
http://arxiv.org/abs/2005.03522
Autor:
Grzeszczyk, M., Molas, M. R., Nogajewski, K., Bartoš, M., Bogucki, A., Faugeras, C., Kossacki, P., Babiński, A., Potemski, M.
Atomically thin materials, like semiconducting transition metal dichalcogenides (S-TMDs), are highly sensitive to the environment. This opens up an opportunity to externally control their properties by changing their surroundings. We investigate the
Externí odkaz:
http://arxiv.org/abs/1910.09951
The encapsulation of few-layer transition metal dichalcogenides (TMDs) in hexagonal boron nitride (h-BN) is known to improve significantly their optical and electronic properties. However, it may be expected that the h-BN encapsulation may affect als
Externí odkaz:
http://arxiv.org/abs/1908.10225
Autor:
Król, M., Rechcińska, K., Nogajewski, K., Grzeszczyk, M., Łempicka, K., Mirek, R., Piotrowska, S., Watanabe, K., Taniguchi, T., Molas, M. R., Potemski, M., Szczytko, J., Piętka, B.
Publikováno v:
2D Materials 7, 015006 (2020)
Due to high binding energy and oscillator strength, excitons in thin flakes of transition metal dichalcogenides constitute a perfect foundation for realizing a strongly coupled light-matter system. In this paper we investigate mono- and few-layer WSe
Externí odkaz:
http://arxiv.org/abs/1908.05300
Autor:
Molas, M. R., Slobodeniuk, A. O., Nogajewski, K., Bartos, M., Bala, Ł., Babiński, A., Watanabe, K., Taniguchi, T., Faugeras, C., Potemski, M.
Publikováno v:
Phys. Rev. Lett. 123, 136801 (2019)
We demonstrate that, in monolayers (MLs) of semiconducting transition metal dichalcogenides, the $s$-type Rydberg series of excitonic states follows a simple energy ladder: $\epsilon_n=-Ry^*/(n+\delta)^2$, $n$=1,2,\ldots, in which $Ry^*$ is very clos
Externí odkaz:
http://arxiv.org/abs/1902.03962
Autor:
Molas, M. R., Slobodeniuk, A. O., Kazimierczuk, T., Nogajewski, K., Bartos, M., Kapuściński, P., Oreszczuk, K., Watanabe, K., Taniguchi, T., Faugeras, C., Kossacki, P., Basko, D. M., Potemski, M.
Publikováno v:
Phys. Rev. Lett. 123, 096803 (2019)
Monolayers of semiconducting transition metal dichalcogenides are two-dimensional direct-gap systems which host tightly-bound excitons with an internal degree of freedom corresponding to the valley of the constituting carriers. Strong spin-orbit inte
Externí odkaz:
http://arxiv.org/abs/1901.04431