Zobrazeno 1 - 10
of 40
pro vyhledávání: '"Noemaun, A."'
Autor:
Noemaun, Ahmed N., Mont, Frank W., Lin, Guan-Bo, Cho, Jaehee, Fred Schubert, E., Bum Kim, Gi, Sone, Cheolsoo, Kyu Kim, Jong
Publikováno v:
Journal of Applied Physics; Sep2011, Vol. 110 Issue 5, p054510, 5p
Publikováno v:
Journal of Applied Physics; Mar2010, Vol. 107 Issue 6, p063102-063102-6, 6p, 2 Diagrams, 7 Graphs
Autor:
E. Fred Schubert, Ahmed N. Noemaun, Daniel D. Koleske, Arthur J. Fischer, Jaehee Cho, David J. Poxson, Kristine Wanta Fullmer, Mary H. Crawford, Frank W. Mont
Publikováno v:
physica status solidi (a). 209:2277-2280
A GaN waveguide structure with micro-pillar arrays is designed and fabricated to measure the extraction of optical modes that would be waveguided in the absence of the pillars. Electroluminescence (EL) measurements of waveguide light-emitting diodes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c59baaf4ec4cc1aff25300e5d1b3f7b
https://doi.org/10.1002/pssa.201228295
https://doi.org/10.1002/pssa.201228295
Autor:
Basanth Jagannathan, D. Faken, N. Zhan, Manoj Kumar, B. Cipriany, James P. Norum, K. Greiner, S. Breit, Karen A. Nummy, D. Fried, Shreesh Narasimha, B. Zhang, Rajeev Malik, Paul D. Agnello, Gregory Costrini, J. Meiring, Katsunori Onishi, H. Nanjundappa, Ahmed N. Noemaun, Christopher D. Sheraw, Stephen S. Furkay
Publikováno v:
2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
We present a technology development methodology that relies on 3D virtual fabrication to rapidly improve yield by increasing tolerance to multilevel process variation. This methodology has been successfully implemented in the development and yield ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1abce879f5e1cafa7541e0a6f16ff19
https://doi.org/10.1109/sispad.2013.6650583
https://doi.org/10.1109/sispad.2013.6650583
Publikováno v:
Optics Express. 20:16677
Patterned graded-refractive-index (GRIN) coatings that offer the controllability of far-field emission pattern and polarization properties of GaInN light-emitting diodes (LEDs) are investigated. Compared with a planar reference LED, the light-output
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::951bee1a8847dc0a50717732f1b73ea8
https://doi.org/10.1364/oe.20.016677
https://doi.org/10.1364/oe.20.016677
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 29:051302
Transparent dielectric layers with varying compositions of TiO2 and SiO2, and ITO are deposited on sapphire and Si substrates by using an RF sputter system. Inductively coupled plasma (ICP) reactive ion etching (RIE) of the ITO hard mask is examined
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34a4dada2d5ebf0cf414f4de07e7e1e6
https://doi.org/10.1116/1.3620494
https://doi.org/10.1116/1.3620494
Autor:
Frank W. Mont, Guan-Bo Lin, Ahmed N. Noemaun, Jong Kyu Kim, Cheolsoo Sone, Gi Bum Kim, Jaehee Cho, E. Fred Schubert
Publikováno v:
Journal of Applied Physics. 110:054510
Graded-refractive-index (GRIN) coatings, composed of multiple dielectric layers of TiO2 and SiO2 are sputter-deposited on the nitrogen-face of thin-film GaInN/GaN light emitting diodes (LEDs). The thickness and refractive index of each layer in the G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68d939b740efe0557124af0bfc137e5f
https://doi.org/10.1063/1.3632072
https://doi.org/10.1063/1.3632072
Autor:
Mary H. Crawford, E. Fred Schubert, Ahmed N. Noemaun, Martin F. Schubert, Daniel D. Koleske, Di Zhu, Jaehee Cho
Publikováno v:
Applied Physics Letters. 96:121110
The confinement of electrons to the active region of GaInN light-emitting diodes(LEDs) is limited by the (i) inefficient electron capture into polar quantum wells, (ii) electron-attracting properties of electron-blocking layers (EBL), (iii) asymmetry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6ba876d59a18a36b53915bff5f36ce6
https://doi.org/10.1063/1.3371812
https://doi.org/10.1063/1.3371812
Publikováno v:
Journal of Applied Physics. 107:063102
We demonstrate GaInN multiple quantum well (MQW) light-emitting diodes (LEDs) having ternary GaInN quantum barriers (QBs) instead of conventional binary GaN QBs for a reduced polarization mismatch between QWs and QBs and an additional separate confin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00f6b8a872aeee8ea9df6e2f04a87729
https://doi.org/10.1063/1.3327425
https://doi.org/10.1063/1.3327425
Autor:
E. Fred Schubert, Jiuru Xu, Di Zhu, Ahmed N. Noemaun, Daniel D. Koleske, Jong Kyu Kim, Mary H. Crawford
Publikováno v:
Applied Physics Letters. 94:081113
We report on a significant decrease in the diode-ideality factor of GaInN/GaN multiple quantum well light-emitting diodes (LEDs), from 5.5 to 2.4, as Si-doping is applied to an increasing number of quantum barriers (QBs). The minimum ideality factor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7de506da6fdd451d85bd583d5ee85ee
https://doi.org/10.1063/1.3089687
https://doi.org/10.1063/1.3089687