Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Noel Hoilien"'
Publikováno v:
Microelectronic Engineering. 72:160-164
A three-parameter model is developed and demonstrated for extracting the capacitance and parallel resistance for leaky capacitors. The technique combines dc and ac measurements tn extract these values. The range over which the measurement is valid va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae4e0d5d810fb87568d786a1f238124b
https://doi.org/10.1016/j.mee.2003.12.050
https://doi.org/10.1016/j.mee.2003.12.050
Autor:
Jeffrey T. Roberts, Ryan C. Smith, Stephen A. Campbell, Wayne L. Gladfelter, Noel Hoilien, Jimmy Chien
Publikováno v:
Chemistry of Materials. 15:292-298
A low-pressure chemical vapor deposition (CVD) reactor was modified to produce a continuous compositional spread of titanium, tin, and hafnium dioxides on a single Si(100) wafer. The corresponding anhydrous metal nitrates, Ti(NO 3 ) 4 , Sn(NO 3 ) 4 ,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0f3d3980790283c1b56f60c0faefa493
https://doi.org/10.1021/cm020900+
https://doi.org/10.1021/cm020900+
Autor:
Michael A. Gribelyuk, M. Coppel, Tiezhong Ma, Noel Hoilien, Charles J. Taylor, Jang Jung Lee, Wayne L. Gladfelter, Mike Tiner, Ryan C. Smith, Boyong He, Stephen A. Campbell, Christopher C. Hobbs, Douglas A. Buchanan
Publikováno v:
IEEE Transactions on Electron Devices. 48:2348-2356
The electrical performance of column IVB metal oxide thin films deposited from their respective anhydrous metal nitrate precursors show significant differences. Titanium dioxide has a high permittivity, but shows a large positive fixed charge and low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30b239f8fc48bec29e5a211ee32b7b4b
https://doi.org/10.1109/16.954476
https://doi.org/10.1109/16.954476
Autor:
Noel Hoilien, Lancy Tsung, Tiezhong Ma, Luigi Colombo, Stephen A. Campbell, M. J. Bevan, Wayne L. Gladfelter, Ryan C. Smith, Jeffrey T. Roberts
Publikováno v:
Advanced Materials for Optics and Electronics. 10:105-114
A brief survey of the precursors used for the chemical vapour deposition of the dioxides of titanium, zirconium and hafnium is presented. The review covers precursors used for the closely related process known as atomic layer chemical vapour depositi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::011128a332a0dc02da16090271053fb6
https://doi.org/10.1002/1099-0712(200005/10)10:3/5<105::aid-amo402>3.0.co
https://doi.org/10.1002/1099-0712(200005/10)10:3/5<105::aid-amo402>3.0.co
Publikováno v:
Chemistry of Materials. 14:474-476
Modification of a low-pressure CVD reactor and the similar deposition chemistries of Ti(NO3)4, Sn(NO3)4, and Hf(NO3)4 allowed the growth of films on silicon exhibiting a compositional spread of the...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea13c4b890ec3094395e5f62bdfe1cd0
https://doi.org/10.1021/cm011538m
https://doi.org/10.1021/cm011538m
Publikováno v:
ChemInform. 33
Modification of a low-pressure CVD reactor and the similar deposition chemistries of Ti(NO3)4, Sn(NO3)4, and Hf(NO3)4 allowed the growth of films on silicon exhibiting a compositional spread of the...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a743aa49f02633086e5782eb4d4c0736
https://doi.org/10.1002/chin.200220010
https://doi.org/10.1002/chin.200220010
Autor:
B. He, I. St. Omer, Noel Hoilien, Ryan C. Smith, Michael A. Gribelyuk, Stephen A. Campbell, Tso-Ping Ma, Wayne L. Gladfelter, Douglas A. Buchanan, Charles J. Taylor
Publikováno v:
Proceedings of the Thirteenth Biennial University/Government/Industry Microelectronics Symposium (Cat. No.99CH36301).
Polycrystalline films of TiO/sub 2/ and ZrO/sub 2/ have been deposited from their respective tetranitrato precursors. Film microstructure has been examined. The leakage current depends on the process conditions, and particularly on a post deposition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7054863f1aac03fbe989d9a734ec63a0
https://doi.org/10.1109/ugim.1999.782817
https://doi.org/10.1109/ugim.1999.782817
Publikováno v:
MRS Proceedings. 670
The electrical performance of transistors built using thin films of the column IVB metal oxides ZrO2 and HfO2 deposited from their respective anhydrous metal nitrate precursors is presented. In contrast to earlier work on TiO2, which is thermodynamic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b43dfb3fe79c2a5f5d7922c31d97a5a
https://doi.org/10.1557/proc-670-k4.2
https://doi.org/10.1557/proc-670-k4.2
Autor:
Jeffrey T. Roberts, Stephen A. Campbell, Rama I. Hegde, Ryan C. Smith, David J. Burleson, Christopher C. Hobbs, Noel Hoilien, Wayne L. Gladfelter, Mike Tiner, Charles J. Taylor
Publikováno v:
MRS Proceedings. 670
Amorphous thin films of composition TixSi1−xO2 have been grown by low pressure chemical vapor deposition on silicon (100) substrates using Si(OEt)4 and either Ti(OiPr)4 or anhydrous Ti(NO3)4 as the sources of SiO2 and TiO2, respectively. The substr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d25ca0fed0edf12fb59e3a60e8e2bfef
https://doi.org/10.1557/proc-670-k4.1
https://doi.org/10.1557/proc-670-k4.1
Autor:
Stephen A. Campbell, Charles J. Taylor, Wayne L. Gladfelter, Jeffrey T. Roberts, Noel Hoilien, Ryan C. Smith
Publikováno v:
MRS Proceedings. 611
Amorphous thin films of composition TixSi1-xO2 have been grown by low pressure chemical vapor deposition on silicon (100) substrates using Si(O-Et)4 and either Ti(O-iPr)4 or anhydrous Ti(NO3)4 as the sources of SiO2 and TiO2, respectively. The substr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c83b1afdf04d44458921bb952166912
https://doi.org/10.1557/proc-611-c2.8.1
https://doi.org/10.1557/proc-611-c2.8.1