Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Nobuyuki Tatemizo"'
Autor:
Oki Sekizawa, Hiroki Suga, Nobuyuki Tatemizo, Shuichi Mamishin, Saki Imada, Katsuji Ito, Yuya Suzuki, Koji Nishio, Yusuke Tamenori, Kiyofumi Nitta, Toshiyuki Isshiki
Publikováno v:
Materials Advances. 2:4075-4080
Wurtzite AlN films with high Fe concentrations were deposited on Si(100) substrates using radio-frequency sputtering, and the growth process was investigated. X-Ray diffraction (XRD) analysis with parallel incident X-rays showed that a thick film (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd6f03492bd38becb823614f1464cc92
https://doi.org/10.1039/d0ma01026j
https://doi.org/10.1039/d0ma01026j
Publikováno v:
Materials Science Forum. 924:322-325
Band structure calculations for radiofrequency-sputtered AlN-films doped with various 3d-transition-metals (TM: V, Cr, and Mn) were conducted to investigate the origin of the characteristic optical absorption structures. Experimentally evaluated crys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18c0ce4bc937e209904f867fe347ddb4
https://doi.org/10.4028/www.scientific.net/msf.924.322
https://doi.org/10.4028/www.scientific.net/msf.924.322
Autor:
Shun Hirata, Nobuyuki Tatemizo, Yoshio Miura, Toshiyuki Isshiki, Koji Nishio, Kazutoshi Fukui, Saki Imada, Fumihiro Sawa
Publikováno v:
J. Mater. Chem. A. 5:20824-20832
We investigated the band structure and photoconductivity of heavily Ti-doped (up to 11.0% of Ti) AlN films (AlTiN) with an optical absorption starting at around 2.2 eV. X-ray diffraction (XRD) and transmission electron microscopy results revealed tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f263d7354f637898460631ff60143849
https://doi.org/10.1039/c7ta03936k
https://doi.org/10.1039/c7ta03936k
Autor:
Koji Nishio, Haruki Nishikawa, Nobuyuki Tatemizo, Toshiaki Ina, Kizuna Okahara, K. Tsuruta, Yoshio Miura, Toshiyuki Isshiki, Saki Imada
Publikováno v:
Scientific Reports
Scientific Reports, Vol 10, Iss 1, Pp 1-8 (2020)
Scientific Reports, Vol 10, Iss 1, Pp 1-8 (2020)
Wurtzite AlN film is a promising material for deep ultraviolet light-emitting diodes. However, some properties that attribute to its crystal orientation, i.e., c-axis orientation, are obstacles in realizing high efficiency devices. Constructing devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a48c25ba808f953f599f3b054125b8ba
https://pubmed.ncbi.nlm.nih.gov/32020058
https://pubmed.ncbi.nlm.nih.gov/32020058
Publikováno v:
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).
The crystallographic properties of AlN films doped with 3d transition metal (3d-TM: Ti, V, and Cr, concentration x: 0–12 %) showing distinctive optical absorption structures in visible light region were investigated. The films were prepared on SiO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e8421bad558298d08793661678c7522
https://doi.org/10.1109/iciprm.2016.7528676
https://doi.org/10.1109/iciprm.2016.7528676
Publikováno v:
AIP Advances, Vol 8, Iss 11, Pp 115117-115117-5 (2018)
We report herein on a high degree of wurtzite [11-20] orientation in AlN films heavily doped with Fe (AlFeN). The AlFeN films were deposited by RF sputtering on SiO2 glass and sapphire (0001) substrates. X-ray diffraction measurements revealed the Fe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f5165fbe8b7e248f03e0578a3ef310eb
https://doaj.org/article/80c408dfdf6e476a9c6c704d6bb8f1d5
https://doaj.org/article/80c408dfdf6e476a9c6c704d6bb8f1d5
Publikováno v:
Journal of Applied Physics. 123:161546
For highly efficient photoconversion devices, 3d-transition-metal-doped AlN is a candidate intermediate-band material. Here, we synthesized and investigated V-doped AlN (AlVN; V ≤ 11%) films. The optical absorption spectra of the films showed chara
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bde22b3794e2e5411d5dd285e57b0942
https://doi.org/10.1063/1.5004609
https://doi.org/10.1063/1.5004609
Publikováno v:
AIP Advances, Vol 7, Iss 5, Pp 055306-055306-6 (2017)
AIP Advances
AIP Advances
We investigate the crystallographic and electronic properties of wurtzite Cr-doped AlN (AlCrN) films (Cr ≤12.0%) that absorb visible light. We confirmed that the films consist of wurtzite columnar single crystals that are densely packed, c-axis ori
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f519511476bcfb27cd927d9ea2283d05
https://doi.org/10.1063/1.4983491
https://doi.org/10.1063/1.4983491
Publikováno v:
Journal of Physics: Condensed Matter. 29:085502
The valence band (VB) structures of wurtzite AlCrN (Cr concentration: 0-17.1%), which show optical absorption in the ultraviolet-visible-infrared light region, were investigated via photoelectron yield spectroscopy (PYS), x-ray/ultraviolet photoelect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e8388da42214bc28261fd915e36597e
https://doi.org/10.1088/1361-648x/aa5381
https://doi.org/10.1088/1361-648x/aa5381