Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Nobuyuki Ohya"'
Autor:
Takeshi Okamoto, Hideyuki Uehigashi, Takahiro Kanda, Nobuyuki Ohya, Akiyoshi Horiai, Soma Sakakibara, Takashi Kanemura, Kiyoshi Betsuyaku, Norihiro Hoshino, Isaho Kamata, Hidekazu Tsuchida
Publikováno v:
Solid State Phenomena. 342:105-112
To reduce manufacturing costs, high-quality 150 mm 4H-SiC wafers were grown at over 1.5 mm/h by high-temperature chemical vapor deposition. The dislocations in the initial growth stage did not increase compared with those in the seed crystal. The dis
Autor:
Okamoto Takeshi, Nobuyuki Ohya, Norihiro Hoshino, Hideyuki Uehigashi, Takahiro Kanda, Isaho Kamata, Hidekazu Tsuchida, Hironari Kuno, Yuichiro Tokuda
Publikováno v:
Materials Science Forum. 1004:5-13
The process conditions for fast growth of 4 in. 4H-polytype SiC (4H-SiC) single crystals were studied for high-temperature gas source method. Prior to experiments, crystal growth simulations were conducted to investigate the influence of vertical gas
Autor:
Nobuyuki Ohya, Koichiro Suekuni, Koji Akai, Setsuo Yamamoto, Y. Saiga, Toshiro Takabatake, Yasushi Kono
Publikováno v:
MATERIALS TRANSACTIONS. 53:636-640
The type-VIII clathrate Ba8Ga16Sn30 shows a high figure of merit (ZT) in the middle temperature range 470–670 K. ZT enhancement through Sb doping has recently been reported in p-type Ba8Ga16Sn30. In this study, calculations to determine the electro
Autor:
Setsuo Yamamoto, Toshiro Takabatake, Koji Akai, Y. Saiga, Koichiro Suekuni, Nobuyuki Ohya, Yasushi Kono
Publikováno v:
Journal of Electronic Materials. 40:845-850
The type VIII clathrate Ba8Ga16Sn30 has a relatively high figure of merit (ZT) from 200°C to 400°C. Our previous calculations showed that the optimum carrier concentration for high ZT is on the order of 1020/cm3 for both p- and n-type samples. The
Autor:
Y. Kono, Shukang Deng, Y. Saiga, Nobuyuki Ohya, Koichiro Suekuni, Toshiro Takabatake, Tatsuya Yamamoto
Publikováno v:
Journal of Alloys and Compounds. 507:1-5
Single crystals of type-VIII clathrate Ba 8 Ga 16 Sn 30 (BGS) with p- and n-type carriers were grown from Ga flux and Sn flux, respectively. With the increase of the initial flux amount, both the electrical resistivity ρ and the absolute value of th
Publikováno v:
Sensors and Actuators A: Physical. 70:92-97
A dynamic focusing lens with a completely new mechanism that can be miniaturized and allows for a quick-response has been developed. This lens is structured to directly transform the lens shape as a crystalline lens of the human eye. The lens is comp
Publikováno v:
IEEJ Transactions on Sensors and Micromachines. 118:364-370
Publikováno v:
Sensors and Actuators A: Physical. 54:760-764
Two types of Bending and expanding motion actuators which are composed of multi-layered PZT unimorph cells have been developed. Each cell's electrode is divided into three sectors and the facing sectors are connected to one another. Multi-directional
Publikováno v:
TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series C. 62:3116-3123
A new multi directional bending and expanding motion actuator for a microsystem is proposed, and the static and dynamic experimental results are reported. This flexible actuator is composed of multi layered PZT unimorph cells. These cells are arrange
Autor:
Tatsuya Yamamoto, Y. Saiga, Toshiro Takabatake, Nobuyuki Ohya, Shukang Deng, Y. Kono, Koichiro Suekuni
Publikováno v:
ChemInform. 41
Single crystals of the title material are prepared by the self-flux method tuning the charge carrier type to either p- or n-type by using Ga or Sn as flux, respectively.