Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Nobuyuki Negishi"'
Publikováno v:
Precision Engineering. 44:87-92
A novel wafer temperature control system using direct expansion cycles is developed to improve etching performance. This system enables rapid temperature control of a wafer with low power consumption. In a previous report, we confirmed that the etchi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e84d667edce497e89851d9254f0bbc0a
https://doi.org/10.1016/j.precisioneng.2015.10.006
https://doi.org/10.1016/j.precisioneng.2015.10.006
Autor:
Daisuke Ogawa, Mitsuhiro Omura, Taku Iwase, Haruka Suzuki, Shota Nunomura, Yasushi Sonoda, Kazuo Takahashi, Nobuyuki Kuboi, Takayoshi Tsutsumi, Kenji Ishikawa, Yoshito Kamaji, Tomohiro Nozaki, Kenichi Yoshikawa, Tetsuji Shimizu, Kazunori Shinoda, Nobuyuki Negishi, Tatsuo Ishijima, Song-Yun Kang, Moritaka Nakamura, Kazunori Koga
Publikováno v:
Japanese Journal of Applied Physics. 58:SE0802
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a28c5de3aa52c38eb6a14b04df3a8b83
https://doi.org/10.7567/1347-4065/ab1638
https://doi.org/10.7567/1347-4065/ab1638
Autor:
Moritaka Nakamura, Kazunori Koga, Kazunori Shinoda, Shota Nunomura, Yoshito Kamaji, Yasushi Sonoda, Kazuo Takahashi, Kenichi Yoshikawa, Tomohiro Nozaki, Song-Yun Kang, Kenji Ishikawa, Daisuke Ogawa, Takayoshi Tsutsumi, Nobuyuki Kuboi, Tatsuo Ishijima, Tetsuji Shimizu, Taku Iwase, Haruka Suzuki, Mitsuhiro Omura, Nobuyuki Negishi
Publikováno v:
Japanese Journal of Applied Physics. 58:SE0803
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efbf09f1ecb1c0c21b5c261c1b3664c4
https://doi.org/10.7567/1347-4065/ab163a
https://doi.org/10.7567/1347-4065/ab163a
Autor:
Daisuke Ogawa, Tomohiro Nozaki, Tatsuo Ishijima, Moritaka Nakamura, Kazunori Koga, Kazunori Shinoda, Song-Yun Kang, Taku Iwase, Haruka Suzuki, Kazuo Takahashi, Nobuyuki Negishi, Takayoshi Tsutsumi, Nobuyuki Kuboi, Shota Nunomura, Kenichi Yoshikawa, Kenji Ishikawa, Mitsuhiro Omura, Yoshito Kamaji, Tetsuji Shimizu, Yasushi Sonoda
Publikováno v:
Japanese Journal of Applied Physics. 58:SE0804
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12565654c5a83e394ccbf6a5132b52d8
https://doi.org/10.7567/1347-4065/ab163b
https://doi.org/10.7567/1347-4065/ab163b
Publikováno v:
Journal of the Japan Society for Precision Engineering. 78:523-527
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ad3825f94d948d4978a8174f1f1f2af
https://doi.org/10.2493/jjspe.78.523
https://doi.org/10.2493/jjspe.78.523
Publikováno v:
Japanese Journal of Applied Physics. 57:106201
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::254fa3fc6dd686e4fc38313d6bc02024
https://doi.org/10.7567/jjap.57.106201
https://doi.org/10.7567/jjap.57.106201
Publikováno v:
Japanese Journal of Applied Physics. 46:7870-7874
The bowing mechanism in high-aspect-ratio contact hole (HARC) etching was investigated by taking into account reactive sticking on the sidewall of the hole. Sticking coefficients of radicals on the sidewall have been estimated by comparing the observ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58a7cea8522c174d8cdccccd13dafb65
https://doi.org/10.1143/jjap.46.7870
https://doi.org/10.1143/jjap.46.7870
Autor:
Masatoshi Oyama, Masaru Izawa, Tadamitsu Kanekiyo, Nobuyuki Negishi, Kenetsu Yokogawa, Masatoshi Miyake
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35:051205
The hypothetical mechanism of bottom profile degradation, such as distortion and twisting in high aspect ratio feature etching, was verified based on the pattern transfer observation of etched pattern. The authors mainly focused on trench pattern sam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::346f103b3e3a901fecc9db9f21c39998
https://doi.org/10.1116/1.4998943
https://doi.org/10.1116/1.4998943
Publikováno v:
Japanese Journal of Applied Physics. 56:06HB07
In this study, atomic layer etching (ALE) of silicon nitride (SiN) using a cyclic process with monofluoromethane chemistry was investigated. Results show that an appropriate desorption time must be chosen at a specific adsorption time to achieve SiN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c98a2953f6781b1231cd6692f153d59
https://doi.org/10.7567/jjap.56.06hb07
https://doi.org/10.7567/jjap.56.06hb07
Autor:
Kenji Maeda, Yasushi Sonoda, Masaru Hori, Tiffany Saldana, M Miura, Kazumasa Okuma, Jim Manos, Kenji Ishikawa, Masaru Izawa, Masaru Kurihara, N Yasui, Motohiro Tanaka, Yohei Ishii, Kazunori Shinoda, Hiroyuki Kobayashi, Nobuya Miyoshi, Nobuyuki Negishi
Publikováno v:
Journal of Physics D: Applied Physics. 50:194001
The demand for precisely controlled etching is increasing as semiconductor device geometries continue to shrink. To fulfill this demand, cyclic atomic level/layer etching will become one of the key technologies in semiconductor device manufacturing a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99c217be39038f6674e411183ebb0cba
https://doi.org/10.1088/1361-6463/aa6874
https://doi.org/10.1088/1361-6463/aa6874