Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Nobuyuki Kajihara"'
Publikováno v:
Infrared Physics & Technology. 47:164-168
We developed a Monte-Carlo simulation to calculate the characteristics of QDIP devices. To implement QDs into our Monte-Carlo simulation, QDs are expressed as a sort of “scattering centers”. Infrared absorption is implemented by the change of the
Publikováno v:
The Journal of the Institute of Image Information and Television Engineers. 52:1033-1039
We have made improvements on the modulation transfer function (MTF) for 256 X 256-element HgCdTe back-illuminated infrared focal plane arrays (IRFPA) in the 8 to 10 pm band. In our approach, each HgCdTe photodiode is surrounded by a ditch structure t
Publikováno v:
Journal of Electronic Materials. 26:616-620
We investigated the formation of cluster defects in HgCdTe materials by numerical simulation. The equations used for the simulation include change in the activation energy for Hg vacancy diffusion dependent on the local cadmium composition. This stud
Autor:
T. Kanno, Hiroyuki Ishizaki, Masahiro Uchigoshi, Minoru Saga, Yuichiro Ito, Masaaki Nakamura, Nobuyuki Kajihara
Publikováno v:
The Journal of the Institute of Television Engineers of Japan. 49:546-552
We have developed a 256×256-element HgCdTe hybrid infrared focal plane array for 8-10μm band that is both large scale and highly sensitive. Three new techniques were used to achieve the large scale array. First, a thin silicon readout circuit on a
Autor:
Hironori Nishino, Yasuhito Uchiyama, Nobuyuki Kajihara, Toshio Fujii, Ozaki Kazuo, Yusuke Matsukura
Publikováno v:
SPIE Proceedings.
A novel quantum-well infrared photodetector (QWIP) with peak responsivity in the mid-wavelength (MW) range was characterized, and the performance of a focal-plane array (FPA) based on the MW-QWIP was investigated. InGaAs/AlGaAs quantum wells were use
Publikováno v:
SPIE Proceedings.
We investigated the passivation properties of CdTe films that were deposited on p-type Hg 0.77 Cd 0.23 Te using the helicon sputtering method. Crystallinity and morphological microstructure of the CdTe films were determined by transmission electron m
Publikováno v:
SPIE Proceedings.
We have investigated the reverse current-voltage characteristics of both 3 - 5 micrometer and 8 - 10 micrometer band HgCdTe photodiodes under background illumination in the temperature range of 40 K to 120 K. The experimental results show that the di
Autor:
Kenji Awamoto, Hideo Wada, Nobuyuki Kajihara, Hiroyuki Wakayama, Yuichiro Ito, Masaaki Nakamura, Mitsuhiro Nagashima, Toshio Kanno
Publikováno v:
SPIE Proceedings.
We developed a 256 x256element HgCdTe hybrid infrared focal plane array (IRFPA) for the 8 to 10 j.tm band. We usedthree technologies to develop this high-performance, long-wavelength, large-scale IRFPA. The first innovation was to glue a sapphire sub
Publikováno v:
SPIE Proceedings.
We have developed a nondestructive evaluation method for HgCdTe. We focused on laser beam induced current (LBIC) which features a high specific resolution and nondestructive evaluation. The LBIC technique shows the electrically active regions in HgCd
Autor:
Hiroyuki Ishizaki, Yuichiro Ito, Kenji Awamoto, Toshio Kanno, Nobuyuki Kajihara, Minoru Saga, Gen Sudo
Publikováno v:
SPIE Proceedings.
We have developed a hybrid HgCdTe focal plane array (FPA) for wavelengths from 8 to 11 micrometers . We describe how we fabricated our back illuminated 64 X 64-element photodiode array on a liquid phase epitaxial (LPE) HgCdTe wafer, and a Si CCD mult