Zobrazeno 1 - 10 of 24 pro vyhledávání: '"Nobuya Nakazaki"'
1
Akademický článek
Ripple formation on Si surfaces during plasma etching in Cl2
Autor: Nobuya Nakazaki, Haruka Matsumoto, Soma Sonobe, Takumi Hatsuse, Hirotaka Tsuda, Yoshinori Takao, Koji Eriguchi, Kouichi Ono
Publikováno v: AIP Advances, Vol 8, Iss 5, Pp 055027-055027-12 (2018)
Nanoscale surface roughening and ripple formation in response to ion incidence angle has been investigated during inductively coupled plasma etching of Si in Cl2, using sheath control plates to achieve the off-normal ion incidence on blank substrate
Externí odkaz: https://doaj.org/article/2f2c87cf1479491f8e1e9d43e3e971dc
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2
Akademický článek
Molecular dynamics simulations of Si etching in Cl- and Br-based plasmas: Cl+ and Br+ ion incidence in the presence of Cl and Br neutrals.
Autor: Nobuya Nakazaki, Yoshinori Takao, Koji Eriguchi, Kouichi Ono
Publikováno v: Journal of Applied Physics; 2015, Vol. 118 Issue 23, p233304-1-233304-18, 18p, 2 Diagrams, 1 Chart, 12 Graphs
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3
Akademický článek
Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products.
Autor: Nobuya Nakazaki, Hirotaka Tsud, Yoshinori Takao, Koji Eriguchi, Kouichi Ono
Publikováno v: Journal of Applied Physics; 2014, Vol. 116 Issue 22, p223302-1-223302-20, 20p, 5 Diagrams, 1 Chart, 15 Graphs
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6
Surface smoothing during plasma etching of Si in Cl2
Autor: Hirotaka Tsuda, Koji Eriguchi, Kouichi Ono, Haruka Matsumoto, Nobuya Nakazaki, Yoshinori Takao
Publikováno v: Applied Physics Letters. 109(20)
Effects of initial roughness on the evolution of plasma-induced surface roughness have been investigated during Si etching in inductively coupled Cl[2] plasmas, as a function of rf bias power or ion incident energy in the range Ei ≈ 20–500 eV. Ex
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f0c7b01c9b32dd80abfb67c4995128d7
http://hdl.handle.net/2433/217469
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7
Origin of plasma-induced surface roughening and ripple formation during plasma etching: The crucial role of ion reflection
Autor: Takumi Hatsuse, Koji Eriguchi, Kouichi Ono, Hirotaka Tsuda, Yoshinori Takao, Nobuya Nakazaki
Publikováno v: Journal of Applied Physics. 124:143301
Plasma-induced surface roughening and ripple formation has been studied based on Monte Carlo simulations of plasma-surface interactions and feature profile evolution during Si etching in Cl-based plasmas, with emphasis being placed on the role and ef
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c682dae5e26b811eb429dda7b89dbfbe
https://doi.org/10.1063/1.5041846
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8
Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products
Autor: Hirotaka Tsuda, Yoshinori Takao, Nobuya Nakazaki, Koji Eriguchi, Kouichi Ono
Publikováno v: Journal of Applied Physics. 116(22)
Atomic- or nanometer-scale surface roughening has been investigated during Si etching in inductively coupled Cl{2} plasmas, as a function of rf bias power or ion incident energy E{i} , by varying feed gas flow rate, wafer stage temperature, and etchi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0eabe74db594797600c0fc7c2e6063d4
http://hdl.handle.net/2433/193256
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