Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Nobutoshi Fujii"'
Autor:
Shunsuke Furuse, Nobutoshi Fujii, Kengo Kotoo, Naoki Ogawa, Suguru Saito, Taichi Yamada, Takaaki Hirano, Yoshiya Hagimoto, Hayato Iwamoto
Publikováno v:
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).
Autor:
Shunsuke Furuse, Hayato Iwamoto, Naoki Ogawa, Yoshiya Hagimoto, Taichi Yamada, Suguru Saito, Nobutoshi Fujii, Kengo Kotoo, T. Hirano
Publikováno v:
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).
In this study, we investigated the relationship between misalignment and bonding strength before and after annealing in the Cu-Cu hybrid bonding process. Before the annealing process, the bonding strength tended to decrease linearly as the misalignme
Autor:
Kazuo Kohmura, Yoshiaki Oku, Keizo Kinoshita, Yuzuru Sonoda, Hideki Takahashi, Nobutoshi Fujii, Nobuhiro Hata, Takamaro Kikkawa, Tetsuo Ono, Ryotaro Yagi
Publikováno v:
Japanese Journal of Applied Physics. 45:6231-6235
It was demonstrated that recovery from dry etching and ashing damage in porous silica low-k films occurred by 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS) vapor annealing. The increase in k-value after Ar/C5F8/O2 plasma etching was reduced from 35 t
Autor:
Nobutoshi Fujii, Shinichiro Horiuchi
Publikováno v:
The Proceedings of the Transportation and Logistics Conference. :257-260
Autor:
Syozo Takada, Nobutoshi Fujii, Nobuhiro Hata, Takahiro Nakayama, Xianying Li, Takamaro Kikkawa
Publikováno v:
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials.
Autor:
R. Yagi, S. Chikaki, Y. Sonoda, Takenobu Yoshino, T. Nakayama, Yutaka Seino, T. Ono, Nobutoshi Fujii, H. Tanaka, Keizo Kinoshita, M. Shimoyama, H. Matsuo, K. Kohmura, A. Ishikawa, Takamaro Kikkawa, Nobuhiro Hata
Publikováno v:
SPIE Proceedings.
A novel scalable low dielectric constant (low-k) film technology was developed by use of self-assembled porous silica. Non-periodic disordered porous silica film structure was formed on a Si wafer by spin-coating a precursor solution with micelles of
Autor:
H. Tanaka, Takenobu Yoshino, T. Goto, A. Nakano, Hidenori Miyoshi, H. Matsuo, A. Ishikawa, K. Kohmura, Nobutoshi Fujii, Syozo Takada, Keizo Kinoshita, Takamaro Kikkawa, Y. Sonoda, N. Hata, Yoshiaki Oku, Yutaka Seino
Publikováno v:
Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..
A novel ultra-low-k porous silica film was developed by use of a self-assembly technology. A periodic hexagonal porous silica film and disordered porous silica film were formed by self-assembling surfactants and acidic silica derived from tetraethoxy
Autor:
Nobutoshi Fujii, T. Goto, Kazuo Kohmura, Hisanori Matsuo, Hitoshi Tanaka, Akira Ishikawa, Takenobu Yoshino, Takamaro Kikkawa, Hidenori Miyoshi, Yuzuru Sonoda, Syozo Takada, Keizo Kinoshita, Yutaka Seino, Yoshiaki Oku, Nobuhiro Hata
Publikováno v:
SPIE Proceedings.
In order to develop ultra-low-k interlayer dielectric films for ULSIs in 45 nm technology generation, a self-assembly technology was introduced to form porous silica films. The precursor solution for the self-assembly contained cationic surfactant su
Publikováno v:
Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials.
Autor:
S. Chikaki, Yoshinori Shishida, Toshinori Takimura, Ryotaro Yagi, Takahiro Nakayama, Takamaro Kikkawa, Nobuhiro Hata, Nobutoshi Fujii, Jun Kawahara
Publikováno v:
Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials.