Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Nobutomo Uehara"'
Publikováno v:
2022 IEEE Frontiers in Education Conference (FIE).
Autor:
Takeshi Fujihara, Korakot Onlaor, Masaru Kamano, Tomoya Konishi, Benchapol Tunhoo, Nobutomo Uehara, Natpasit Chaithanatkun, Takanori Kozai
Publikováno v:
Materials Today: Proceedings. 4:6079-6084
In this study, zinc oxide films were fabricated on quartz glass substrate using spin coating technique with 2 molar of zinc oxide in organic solvent as starting materials. The fabricated sample was post-annealed at different temperature from 350 °C
Publikováno v:
Journal of Materials Science and Chemical Engineering. :41-48
ZnO films were deposited on glass substrates by means of a metal organic decomposition (MOD) method. We investigated the effect of annealing temperature, time and the number of laminated layers on the film structure on the basis of X-ray diffraction
Autor:
Yuichi Nakamura, Hasegawa Tatsuo, Takashi Matsumoto, Minoru Komatsu, Masaru Kamano, Nobutomo Uehara
Publikováno v:
IEEJ Transactions on Fundamentals and Materials. 131:628-634
Publikováno v:
Journal of JSEE. 58:65-70
Publikováno v:
Nanotechnology. 16:S102-S106
Based on topographic images of the GaAs(110) surface obtained by non-contact atomic force microscopy (NC-AFM) with different tip–sample distances, we discuss the tip–sample distance dependence of the cantilever vibration amplitude and the tip-ind
Publikováno v:
Czechoslovak Journal of Physics. 54:781-784
We have investigated the effects of chemical etching on Raman spectra of porous silicon. The as-anodized porous silicon consisted mainly of crystalline silicon, as indicated by the Raman spectra. The background in the spectrum was strong, indicating
Publikováno v:
Nanotechnology. 15:S97-S100
Tip–sample interactions are at the origin of atomic resolution in non-contact atomic force microscopy (NC-AFM) but also make it difficult to understand the meaning of atomic features observed as NC-AFM images. (110) surfaces of III–V semiconducto
Publikováno v:
MRS Proceedings. 638
We studied the effect of surface roughness of Si wafers on porous silicon by means of photoluminescence (PL), Fourier transformed infrared (FTIR) absorption and Raman spectroscopy. We prepared several kinds of Si wafers with a different surface rough
Autor:
Tetsuya Yamazaki, Yasuo Tsutsumi, Nobutomo Uehara, Masato Ohmukai, Akiharu Kobayashi, Shinji Fujihara
Publikováno v:
MRS Proceedings. 560
We studied the effect of post-anodization chemical etching on porous silicon by means of photoluminescence (PL), Fourier transform infrared (FTIR) absorption and Raman spectroscopy. We performed these measurements with repeating etching and then obse