Zobrazeno 1 - 10
of 101
pro vyhledávání: '"Nobuteru Tsubouchi"'
Autor:
Hitoshi Umezawa, Akiyoshi Chayahara, Nobuteru Tsubouchi, Hideaki Yamada, Yoshiaki Mokuno, Shinya Ohmagari
Publikováno v:
Diamond and Related Materials. 81:33-37
Heavily B-doped p+ diamond (100) thick films were grown by hot-filament chemical vapor deposition (HFCVD). Low resistivity ( 100 μm). Freestanding crack-free films were prepared by removing the seed substrates via laser-cut and mechanical polishing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::393c4b7fbff0ce3c94cee8ef483cf355
https://doi.org/10.1016/j.diamond.2017.11.003
https://doi.org/10.1016/j.diamond.2017.11.003
Autor:
Yoshiaki Mokuno, Nobuteru Tsubouchi
Publikováno v:
Diamond and Related Materials. 78:44-48
The (001)-oriented chemical vapor deposition (CVD) homoepitaxial diamond films are known to include grown-in threading dislocation bundles parallel to the near-[001] growth direction; however their detailed microstructures have not yet been sufficien
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd6b81a22939b32621c1bf92f4794026
https://doi.org/10.1016/j.diamond.2017.07.007
https://doi.org/10.1016/j.diamond.2017.07.007
Autor:
Nobuteru Tsubouchi, Yoshiaki Mokuno
Publikováno v:
Journal of Crystal Growth. 455:71-75
We present a detailed crystalline structure around one etch pit formed on the as-grown surface of a (001)-oriented chemical vapor deposition (CVD) homoepitaxial single crystal diamond film investigated using cross-sectional transmission electron micr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73259e45e1e08bbe8c0f71b976f90394
https://doi.org/10.1016/j.jcrysgro.2016.09.030
https://doi.org/10.1016/j.jcrysgro.2016.09.030
Autor:
Nobuteru Tsubouchi
Publikováno v:
Applied Physics Letters. 117:222103
In this paper, we present how configurations of stacking faults (SFs) in (001)-oriented single crystal diamond substrates changed and extended in the film during homoepitaxial diamond growth by chemical vapor deposition, which was investigated using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b205e2b4306b2679a7419e2c92eb2fe8
https://doi.org/10.1063/5.0031367
https://doi.org/10.1063/5.0031367
Autor:
Jocelyn Achard, Daniel Araujo, Jean-Charles Arnault, Julien Barjon, Akiyoshi Chayahara, Nazareno Donato, David Eon, Tsuyoshi Funaki, Etienne Gheeraert, Ken Haenen, Mutsuko Hatano, Takayuki Iwasaki, Hiromitsu Kato, Yukako Kato, Hiroshi Kawarada, Satoshi Koizumi, Toshiharu Makino, Tsubasa Matsumoto, Yoshiaki Mokuno, Robert J. Nemanich, Shinya Ohmagari, Julien Pernot, Nicolas Rouger, Matthias Schreck, Alexandre Tallaire, Tokuyuki Teraji, Norio Tokuda, Nobuteru Tsubouchi, Florin Udrea, Hitoshi Umezawa, Junya Yaita, Hideaki Yamada, Satoshi Yamasaki, Takuya Murooka
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21f20b128ba12f8515a49e5181cb3766
https://doi.org/10.1016/b978-0-08-102183-5.00010-8
https://doi.org/10.1016/b978-0-08-102183-5.00010-8
Autor:
Y. Mokuno, Shinya Ohmagari, Hitoshi Umezawa, Hideaki Yamada, Shinichi Shikata, Nobuteru Tsubouchi, Akiyoshi Chayahara, Kridsanapan Srimongkon
Publikováno v:
Diamond and Related Materials. 58:110-114
By hot-filament (HF) chemical vapor deposition (CVD), heavily boron (B)-doped single-crystal diamond (100) films were fabricated and their structural and electrical properties were studied. We did not observe the soot formation, which is frequently o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e40af0a56c6593ab301ca55c6f1bd6b
https://doi.org/10.1016/j.diamond.2015.06.011
https://doi.org/10.1016/j.diamond.2015.06.011
Neutron-enhanced annealing of ion-implantation induced damage in silicon heated by nuclear reactions
Autor:
Yuji Horino, K. Sato, Atsushi Kinomura, Y. Mokuno, Toshimasa Yoshiie, Akiyoshi Chayahara, R. Ishigami, Qiu Xu, Keisuke Yasuda, Nobuteru Tsubouchi
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 334:48-51
The effect of neutron irradiation on recovery (annealing) of irradiation damage has been investigated for self-ion implanted Si. A damage layer was introduced by 200 keV Si+ implantation to a fluence of 5 × 1014 Si/cm2 at room temperature. The damag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39c730acfe6da7c8afe703d868d0a59d
https://doi.org/10.1016/j.nimb.2014.05.001
https://doi.org/10.1016/j.nimb.2014.05.001
Autor:
Yoshiaki Mokuno, Daisuke Takeuchi, Hitoshi Umezawa, Nobuteru Tsubouchi, Shinya Ohmagari, Akiyoshi Chayahara, Hideaki Yamada
Publikováno v:
physica status solidi (a). 216:1970068
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7cc60e8a9081e563143ef0fd1c450061
https://doi.org/10.1002/pssa.201970068
https://doi.org/10.1002/pssa.201970068
Publikováno v:
Diamond and Related Materials. 97:107422
Various types of harmful growth defects lowering crystal quality are often produced during growth of chemical vapor deposition (CVD) homoepitaxial diamond films. Among these, in this study, microstructures of the dome-shaped hillock (DH) have been st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34fb5f09d0a347d9a8f09bff3cdf65b4
https://doi.org/10.1016/j.diamond.2019.05.008
https://doi.org/10.1016/j.diamond.2019.05.008
Autor:
Yoshiaki Mokuno, Hideaki Yamada, Akiyoshi Chayahara, Hitoshi Umezawa, Hiroaki Saitoh, Nobuteru Tsubouchi, Fumiaki Kawaii, Akinori Seki, Shinya Ohmagari
Publikováno v:
Applied Physics Letters. 114:082104
Diamond mosaic wafers in which several seed crystals are connected laterally by chemical vapor deposition (CVD) are promising large-scale substrates for diamond electronics. One of the prime concerns of the applicability of diamond mosaic wafers is t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85f2da05be4ce9ff30e1c2301bb00df9
https://doi.org/10.1063/1.5085364
https://doi.org/10.1063/1.5085364