Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Nobutaka Oi"'
Autor:
Reem Alhasani, Taichi Yabe, Yutaro Iyama, Nobutaka Oi, Shoichiro Imanishi, Quang Ngoc Nguyen, Hiroshi Kawarada
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-10 (2022)
Abstract Though the complementary power field effect transistors (FETs), e.g., metal–oxide–semiconductor-FETs (MOSFETs) based on wide bandgap materials, enable low switching losses and on-resistance, p-channel FETs are not feasible in any wide ba
Externí odkaz:
https://doaj.org/article/3ea4eb941523412dbfdd0d4a207cc70a
Autor:
Shaili Falina, Sora Kawai, Nobutaka Oi, Hayate Yamano, Taisuke Kageura, Evi Suaebah, Masafumi Inaba, Yukihiro Shintani, Mohd Syamsul, Hiroshi Kawarada
Publikováno v:
Sensors, Vol 18, Iss 7, p 2178 (2018)
In this paper, we report on the effect of carboxyl- and amine terminations on a boron-doped diamond surface (BDD) in relation to pH sensitivity. Carboxyl termination was achieved by anodization oxidation in Carmody buffer solution (pH 7). The carboxy
Externí odkaz:
https://doaj.org/article/b9c0f467def8494e9a7afdd60693b1de
Publikováno v:
Carbon. 176:349-357
Low-loss power semiconductor devices realize the efficient control and miniaturization of inverters and greatly contribute to the development of power electronics. N-channel vertical-type power semiconductor devices that simultaneously demonstrate a
Autor:
Taichi Yabe, Reem Mohammed Alhasani, Hiroshi Kawarada, Yutaro Iyama, Shoichiro Imanishi, Quang N. Nguyen, Nobutaka Oi
Publikováno v:
Scientific Reports. 12
Though the complementary power field effect transistors (FETs), e.g., metal–oxide–semiconductor-FETs (MOSFETs) based on wide bandgap materials, enable low switching losses and on-resistance, p-channel FETs are not feasible in any wide bandgap mat
Publikováno v:
IEEE Transactions on Electron Devices. 67:4006-4009
Hydrogen-terminated (C-H) diamond has a high current density owing to the 2-D hole gas (2DHG) on its C-H diamond surface. The C-H diamond metal-oxide-semiconductor field-effect transistor (MOSFET) has high-breakdown-voltage characteristics but exhibi
Autor:
Masayuki Iwataki, Shotaro Amano, Atsushi Hiraiwa, Hiroshi Kawarada, Nobutaka Oi, Jun Nishimura, Kiyotaka Horikawa, Masafumi Inaba, Taisuke Kageura
Publikováno v:
IEEE Electron Device Letters. 41:111-114
We present a miniaturized vertical-type two- dimensional hole gas (2DHG) diamond metal-oxide-semiconductor field-effect transistor (MOSFET) by adopting a gate-source overlapping structure. We developed a 2- $\mu \text{m}$ -wide trench and disposed a
Autor:
Takuya Kudo, Hiroshi Kawarada, Satoshi Okubo, Masafumi Inaba, Nobutaka Oi, Atsushi Hiraiwa, Shinobu Onoda
Publikováno v:
IEEE Electron Device Letters. 40:933-936
Diamond is a promising material for power applications owing to its excellent physical properties. Two-dimensional hole gas (2DHG) diamond metal–oxide–semiconductor field-effect transistors (MOSFETs) with hydrogen-terminated (C-H) channel have hi
Autor:
Atsushi Hiraiwa, Hiroshi Kawarada, Kiyotaka Horikawa, Nobutaka Oi, Taisuke Kageura, Satoshi Okubo, Shoichiro Imanishi
Publikováno v:
IEEE Electron Device Letters. 40:279-282
This letter reports the small-signal and large-signal performances at high drain voltage ( $\text{V}_{\textsf {DS}}$ ) ranging up to 60 V for a 0.5 $\mu \text{m}$ gate length two-dimensional hole gas diamond metal-oxide-semiconductor field-effect tra
Autor:
Nobutaka Oi, Masayuki Iwataki, Atsushi Hiraiwa, Naoya Niikura, Hiroshi Kawarada, Aoi Morishita, Jun Nishimura
Publikováno v:
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials.
Autor:
T. Yabe, Taisuke Kageura, Jorge J. Buendia, Kiyotaka Horikawa, Hiroshi Kawarada, Nobutaka Oi, Satoshi Okubo, Sho Kono, A. Hiraiwa
Publikováno v:
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.