Výsledky vyhledávání - "Nobutaka Mizutani"

Study on Influence of O2 Concentration in Wafer Cleaning Ambient for Smoothness of Silicon (110) Surface Appearing at Sidewall of Three-Dimensional Transistors

Autor: Akinobu Teramoto, Shigetoshi Sugawa, Nobutaka Mizutani, Tomoyuki Suwa, Takenobu Matsuo, Yasuyuki Shirai

Publikováno v: ECS Transactions. 97:23-29

The Si(110) surface appears at the sidewall of 3D transistors such as FinFET [1,2]. The surface micro-roughness of Si(110) strongly affects to the device characteristics because the Si(110) sidewall surface have a higher proportion of channel region

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cf30c6523300c67b1eb1c56848adef95
https://doi.org/10.1149/09703.0023ecst

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The Effect of Oxygen Concentration in Cleaning Process on Silicon Surface

Autor: Nobutaka Mizutani, Akinobu Teramoto, Hitoshi Morinaga

Publikováno v: ECS Meeting Abstracts. :760-760

not Available.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::97a5265fa065c922a38f25457f0cc2a9
https://doi.org/10.1149/ma2005-02/20/760

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A Model for Predicting Preferential Orientation of Chemical-Vapor-Deposited Films

Autor: Kunikazu Nishioka, Hiroshi Komiyama, Nobutaka Mizutani

Publikováno v: Journal of The Electrochemical Society. 147:1440

A model is presented for predicting the preferential crystallographic orientation of chemical-vapor-deposited (CVD) films. This model incorporates the evolutionary selection model that the orientation occurs along the fastest growing plane. The model

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f0a95c5b5ba4c6e0031aa47fba8cecc7
https://doi.org/10.1149/1.1393374

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