Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Nobuo Matsumura"'
Publikováno v:
Journal of Crystal Growth. 251:602-606
We studied the growth conditions for controlling CdSeTe epilayer composition. Te atoms are readily incorporated into CdSeTe epilayers. However, we could not control the Te composition by the beam intensity ratio of Te to Cd. Therefore, Te atoms are n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64c6a34655e46aad946434496fdf8ae9
https://doi.org/10.1016/s0022-0248(02)02434-x
https://doi.org/10.1016/s0022-0248(02)02434-x
Autor:
Nobuo Matsumura, Junji Saraie
Publikováno v:
SHINKU. 46:111-115
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f88d92b80386fc7e99d9db233035eb97
https://doi.org/10.3131/jvsj.46.111
https://doi.org/10.3131/jvsj.46.111
Publikováno v:
Journal of Crystal Growth. :1550-1553
CdSeTe layers were grown on GaAs(1 0 0) substrates by molecular beam epitaxy. The beam-intensity ratios of Se to Te atoms were changed to control the composition of the CdSeTe mixed crystals. The Te atoms were more readily incorporated into the epila
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b61eea8bf9642438fff9ed80c2aba25a
https://doi.org/10.1016/s0022-0248(01)02366-1
https://doi.org/10.1016/s0022-0248(01)02366-1
Publikováno v:
Journal of Crystal Growth. :1536-1540
We successfully fabricated wurtzite quantum-well structures with Zn 0.4 Cd 0.6 Se barrier layers and a four monolayer CdSe well layer on cubic ZnSe/GaAs(111)B substrates by molecular beam epitaxy. Although the cubic CdSe well layer grew on the cubic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2370260aa7cbc48453ca78fc9d1c3a10
https://doi.org/10.1016/s0022-0248(01)02362-4
https://doi.org/10.1016/s0022-0248(01)02362-4
Publikováno v:
Journal of Crystal Growth. :1121-1125
Self-assembled CdSe single- and multi-quantum-dots layer structures were grown by molecular beam epitaxy with ZnSe barrier layer and were evaluated by photoluminescence measurements. The peak wavelengths of the emission spectra were around 480 nm for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c9289551a8a9a11fcaa21f12c168454
https://doi.org/10.1016/s0022-0248(01)01000-4
https://doi.org/10.1016/s0022-0248(01)01000-4
Self-assembling CdTe quantum dots on ZnSe by alternate supplying and molecular beam epitaxial method
Publikováno v:
Journal of Crystal Growth. :694-697
Self-assembling CdTe quantum dots were grown on ZnSe epilayers by alternate supplying and molecular beam epitaxial methods. RHEED observation implies that the growth mode of CdTe on ZnSe was the Volmer–Weber one owing to the large lattice mismatch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4aef302073b06330155323d03b2b7e2f
https://doi.org/10.1016/s0022-0248(00)00180-9
https://doi.org/10.1016/s0022-0248(00)00180-9
Publikováno v:
Journal of Photopolymer Science and Technology. 22:437-439
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::959ed08dfddeac13a5931e2335cfe597
https://doi.org/10.2494/photopolymer.22.437
https://doi.org/10.2494/photopolymer.22.437
Publikováno v:
Journal of Crystal Growth. :723-727
We grew Zn 0.8 Cd 0.2 Se/ZnSe strained quantum-well structures on GaAs(1 1 1)A substrates 10°-misoriented toward [1 0 0] direction by molecular beam epitaxy. The growth rates and the Cd composition in the ZnCdSe epilayers on (1 1 1)A substrates were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c260581ecff6360128e36e47bd20c76
https://doi.org/10.1016/s0022-0248(98)80151-6
https://doi.org/10.1016/s0022-0248(98)80151-6
Publikováno v:
Journal of Crystal Growth. :608-612
ZnSe films were grown on GaAs(1 1 1)B substrates by molecular beam epitaxy. The observation of reflection high-energy electron diffraction confirmed that the epilayers on both just and 10 o -misoriented (1 1 1)B substrates consist of twins. The photo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5b5bd398578f6dc33d98f66c26dc682
https://doi.org/10.1016/s0022-0248(96)00988-8
https://doi.org/10.1016/s0022-0248(96)00988-8
Publikováno v:
Journal of Crystal Growth. 159:85-88
The properties of ZnSe(111) films grown on misoriented GaAs(111)A substrates by molecular beam epitaxy, which includes the improvement in the crystalline quality and nitrogen-doping characteristics of ZnSe(111)A epilayers, were reported. Mirror-like
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::478105c0f5d10c98f860ad390c1a4412
https://doi.org/10.1016/0022-0248(95)00576-5
https://doi.org/10.1016/0022-0248(95)00576-5