Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Nobuo, Ozawa"'
Publikováno v:
高崎経済大学論集 = THE ECONOMIC JOURNAL OF TAKASAKI CITY UNIVERSITY OF ECONOMICS. 63(1):1-15
Publikováno v:
高崎経済大学論集 = THE ECONOMIC JOURNAL OF TAKASAKI CITY UNIVERSITY OF ECONOMICS. 62(3・4):1-21
Publikováno v:
高崎経済大学論集 = THE ECONOMIC JOURNAL OF TAKASAKI CITY UNIVERSITY OF ECONOMICS. 62(2):1-18
Autor:
Nobuo, Ozawa
Publikováno v:
国際経営・文化研究 = Cross-cultural business and cultural studies. 18(2):137-155
In the 21st century of knowledge-based society, how to respond to customers in the distribution industry become more and more important than ever. It is needless to say that, in this highly-networked information society, customer satisfaction influen
Autor:
Katsuyoshi Hoshino, Hiroshi Kokado, Takashi Kitamura, Nobuo Ozawa, Tsutomu Ishikawa, Hiroko Seki
Publikováno v:
Chemistry of Materials. 14:1067-1074
The mechanism of Meisenheimer complex formation by a novel electrochemical route was investigated. The synthetic route utilizes a CH3CN solution consisting of trinitrofluorenone (TNF), electron-donative molecules (EDM = pyrrole, indole, and carbazole
Autor:
Kanehiro Goda, Masahiro Mizota, Katsuhiko Fukutake, Hiroshi Kosuzume, Nobuo Ozawa, Katsuaki Kato, Kazuo Nakayama, Yuji Nagao
Publikováno v:
Ensho. 11:585-591
A multipotent enzyme inhibitor, ulinastatin, was tested for the effect on osteoarthritis (OA) induced by a partial lateral meniscectomy combined with section of the fibular collateral and sesamoid ligaments in knee joints of rabbits. In the control g
Autor:
Hiroshi Kokado, Tatsuhiro Tokunaga, Tsutomu Ishikawa, Nobuo Ozawa, Katsuyoshi Hoshino, Hiroko Seki
Publikováno v:
The Journal of organic chemistry. 64(13)
Publikováno v:
Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials.
Publikováno v:
SPIE Proceedings.
Reactive-ion-etching (RIE) induced surface modifications of SiO2 and phosphosilicate glass (PSG) were investigated using thermal desorption mass spectroscopy (TDS) and X-ray photoelectron spectroscopy (XPS), in order to study their reactivity varianc
Publikováno v:
MRS Proceedings. 236
The formation of rugged surface polycrystalline silicon (poly-Si) using Cl2/O2 plasmas in which O2 concentration is 0-10 % has been investigated. Phosphorus doped poly-Si (n+ poly-Si) surface is rugged by the plasma etching under the condition that O