Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Nobumichi Okazaki"'
Autor:
Tetsuya Yamamoto, Hiroshi Kano, Yutaka Higo, Kazuhiro Ohba, Tetsuya Mizuguchi, Masanori Hosomi, Kazuhiro Bessho, Minoru Hashimoto, Hiroyuki Ohmori, Takeyuki Sone, Keitaro Endo, Shinya Kubo, Hiroaki Narisawa, Wataru Otsuka, Nobumichi Okazaki, Makoto Motoyoshi, Hajime Nagao, Tsutomu Sagara
Publikováno v:
Journal of Applied Physics; 5/15/2005, Vol. 97 Issue 10, p10P503-1-10P503-6, 6p, 1 Black and White Photograph, 11 Graphs
Autor:
T. Sagara, T. Kikutani, Hiroaki Narisawa, Nobumichi Okazaki, Masanori Hosomi, W. Ohtsuka, H. Mori, M. Motoyoshi, M. Nakamura, M. Watanabe, C. Fukamoto, I. Yamamura, K. Moriyama, Hajime Yamagishi, M. Shouji, Kaori Tai, H. Yamada, Kazuhiro Bessho, Hiroshi Kano, R. Hachino
Publikováno v:
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..
In this paper, we study to reduce the switching dispersion and improve 0/1 separation of Magnetic Tunnel Junction (MTJ) elements in order to realize high density MRAM. Various kinds of MTJ sizes and shapes have been evaluated and conclude that in ell
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c38f7d71bf04212052b563dadb4c78fe
https://doi.org/10.1109/vlsit.2004.1345370
https://doi.org/10.1109/vlsit.2004.1345370
Autor:
Wataru Otsuka, Masanori Hosomi, Takeyuki Sone, Tsutomu Sagara, Minoru Hashimoto, Kazuhiro Ohba, Shinya Kubo, Takashi Yamamoto, Makoto Motoyoshi, Kazuhiro Bessho, Tetsuya Mizuguchi, Hiroshi Kano, Yutaka Higo, Hiroaki Narisawa, Nobumichi Okazaki, Keitaro Endo, Hajime Nagao, Hiroyuki Ohmori
Publikováno v:
Journal of Applied Physics. 97:10P503
The reliability in magnetoresistive random access memory (MRAM) write operation was investigated for both toggle and asteroid memory chips developed with 0.18μm CMOS process. Thermally activated magnetization reversal, being the dominant origin of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e8c605559e8921cd3a185c13a01eb52
https://doi.org/10.1063/1.1851879
https://doi.org/10.1063/1.1851879
Publikováno v:
Journal of Vacuum Science and Technology. 16:1764-1766
A fast computation method to correct for the proximity effect in electron‐beam lithography is studied for practical uses. Formerly, to compute the proximity effect a double integral of two Gaussian distribution functions was applied. To save comput
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51d3e9b092fae625a3915a1cd32731a8
https://doi.org/10.1116/1.570289
https://doi.org/10.1116/1.570289
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