Zobrazeno 1 - 10 of 353 pro vyhledávání: '"Nobuhiko Sawaki"'
1
Annealing effect on threading dislocations in a GaN grown on Si substrate
Autor: Hiroyuki Iwata, M. Irie, H. Kobayashi, Yoshio Honda, R. Kamei, Hiroshi Amano, T. Kamiya, H. Saka, Nobuhiko Sawaki
Publikováno v: Journal of Crystal Growth. 468:835-838
Effect of rapid thermal annealing (RTA) on crystal defects in a GaN layer grown on a (111)Si substrate was investigated by photoluminescence (PL) and transmission electron microscopy (TEM) analyses. The PL spectra suggested that the density of galliu
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8467d78700ed3b4370d20d3c221dd4b0
https://doi.org/10.1016/j.jcrysgro.2017.01.001
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2
Carbon microspheres grown by using hydride vapor phase epitaxy
Autor: Nobuhiko Sawaki, Hunsoo Jeon, Kee Sam Shin, Sam Nyung Yi, Chanmi Lee, Chanbin Lee, Young Moon Yu, Suck-Whan Kim, Jong Seong Bae, Min Yang, Hyung Soo Ahn, Min-Ah Park
Publikováno v: Journal of the Korean Physical Society. 67:1268-1272
A carbon microsphere of a core-shell type was grown by using a new method of mixed-source hydride vapor phase epitaxy (HVPE). The surface and the cross section of the carbon microsphere grown by using the new method were observed by using scanning el
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f2cdfe8abf1606c0b6d95cc055117eef
https://doi.org/10.3938/jkps.67.1268
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3
Thick AlN epilayer grown by using the HVPE method
Autor: Nobuhiko Sawaki, Min Yang, Hunsoo Jeon, Chanbin Lee, Sam Nyung Yi, Suck-Whan Kim, Hyung Soo Ahn, Sang Chil Lee, Chanmi Lee, Young Moon Yu
Publikováno v: Journal of the Korean Physical Society. 67:643-647
A thick AlN epilayer is grown directly on a c-plane sapphire substrate by using the hydride vapor phase epitaxy (HVPE) method with a small quantity of Al. The new type (RF + hot-wall) flow HVPE reactor used in the AlN epilayer growth is custommade. T
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9ce66b47d809773f1173e82eebc049fb
https://doi.org/10.3938/jkps.67.643
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4
Characterization of carbon microspheres grown by HVPE
Autor: Yu Young Moon, Keesam Shin, Min Yang, Jong Seong Bae, Sam Nyung Yi, Kim Suck Whan, Nobuhiko Sawaki, Hyung Soo Ahn
Publikováno v: Journal of the Korean Crystal Growth and Crystal Technology. 25:62-67
The carbon microspheres of a core-shell type were grown by the method of mixed-source hydride vapor phase epitaxy (HVPE). The surface and the cross section of the carbon microsphere grown by a new method were observed by scanning electron microscope
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cb8294792040372f04b7ae460f1b3051
https://doi.org/10.6111/jkcgct.2015.25.2.062
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6
Resonant Raman and FTIR spectra of carbon doped GaN
Autor: K. Yamashita, H. Kobayashi, K. Araki, S. Ito, Nobuhiko Sawaki, Yoshio Honda, Hiroshi Amano, K. Suzuki
Publikováno v: Journal of Crystal Growth. 414:56-61
Intentionally carbon (C) doped (0 0 0 1)GaN was grown using C2H2 on a sapphire substrate by metalorganic vapor phase epitaxy. Optical spectra of the heavily doped samples were investigated at room temperature. In Raman spectra excited by the 325 nm l
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9ee2171068cccdac4e0b4166fbc90408
https://doi.org/10.1016/j.jcrysgro.2014.11.024
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7
The growth of GaN on the metallic compound graphite substrate by HVPE
Autor: Gang Seok Lee, Sam Nyung Yi, Min Jeong Shin, Ji Young Kim, Nobuhiko Sawaki, Young Moon Yu, Hyung Soo Ahn, Min Yang, Min Ah Park, Hun Soo Jeon, Hee Shin Kang, Suck-Whan Kim, Hyo Suk Lee
Publikováno v: Journal of the Korean Crystal Growth and Crystal Technology. 23:213-217
The GaN layer was typical III-V nitride semiconductor and was grown on the sapphire substrate which cheap and convenient. However, sapphire substrate is non-conductivity, low thermal conductivity and has large lattice mismatch with the GaN layer. In
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c31039e8db80e0fc44770c7326e94eef
https://doi.org/10.6111/jkcgct.2013.23.5.213
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9
Strain relaxation in thick ($1{\bar {1}}01$) InGaN grown on GaN/Si substrate
Autor: Masahito Yamaguchi, Tomoyuki Tanikawa, Yoshio Honda, Nobuhiko Sawaki, Hiroshi Amano
Publikováno v: physica status solidi (b). 249:468-471
We demonstrated the growth of thick InGaN on () GaN/Si. The InGaN layer showed a marked inclination along the 〈0001〉 projection direction. The InGaN with a higher indium composition showed a larger inclination. Owing to the lattice mismatch betwe
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1f0074709f334b9e6344d67fac9fbdf6
https://doi.org/10.1002/pssb.201100445
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10
Optical properties of (1 1¯ 0 1) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates
Autor: Masahito Yamaguchi, Wei Tsai Liao, Tomoyuki Tanikawa, Ching Hsueh Chiu, Yi-Chen Chen, Shing-Chung Wang, Chien-Chung Lin, Yoshio Honda, Shih Chun Ling, Hao-Chung Kuo, Zhen-Yu Li, Tien-Chang Lu, Da Wei Lin, Nobuhiko Sawaki
Publikováno v: Journal of Crystal Growth. 318:500-504
We present a study of high quality (1 1 ¯ 0 1) GaN films and the InGaN/GaN multiple quantum wells (MQWs) using epitaxial lateral overgrowth (ELO) technique by atmospheric pressure metal organic chemical vapor deposition (MOCVD). The smooth coalescen
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::716c298bd5f41f0c1ee020d8f6480282
https://doi.org/10.1016/j.jcrysgro.2010.10.054
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