Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Nobuhiko Chiwata"'
Publikováno v:
Journal of The Japan Institute of Electronics Packaging. 22:112-118
Autor:
Motoki Ohta, Nobuhiko Chiwata
Publikováno v:
Journal of Magnetism and Magnetic Materials. 509:166838
We developed nanocrystalline powders with high Fe contents through methodological and compositional innovations. The Fe-Cr-Cu-Si-B-Sn powders exhibit high Bs of 1.55 T–1.60 T and core losses of 4800–8000 kW/m3 at 2 MHz under 30 mT, P0.2/3M. The C
Publikováno v:
Transactions of The Japan Institute of Electronics Packaging. 5:1-11
We have developed a modified accumulated damage model that can be used to predict fatigue failure lives of solder joints in electronic devices. Our model calculates the fatigue failure life of solder on the basis of the damage that accumulates during
Publikováno v:
Acta Materialia. 60:102-111
In order to remove the effect of current crowding on electromigration, thick Cu under-bump metallization has been widely adopted in the electronics industry. Three-dimensional (3-D) integrated circuits, using through Si via Cu column interconnects, i
Autor:
Masaru Fujiyoshi, Yu Harubeppu, Hisashi Tanie, Hiroshi Shintani, Nobuhiko Chiwata, Shinichi Fujiwara
Publikováno v:
Journal of The Japan Institute of Electronics Packaging. 15:541-549
Publikováno v:
Bulletin of Materials Science. 22:697-700
The thermoequilibrium state of short range order (SRO) and the ordering process to the long range order (LRO) phase in Cu3Pt have been studied by thein situ transmission electron microscope (TEM) observation method. It is confirmed that the alloy has
In-situ TEM Observation of Phase Transformation Processes in Cu3Pt with a Long-Period Superstructure
Publikováno v:
Journal of Electron Microscopy. 45:442-447
Autor:
Masaru Fujiyoshi, Hisashi Tanie, Shinichi Fujiwara, Hiroshi Shintani, Nobuhiko Chiwata, Yu Harubeppu
Publikováno v:
2012 4th Electronic System-Integration Technology Conference.
Electromigration (EM) failures of flip-chip solder joints due to void growth, resulting from miniaturization of joint structure, have recently been reported. In addition, growth behavior of electromigration voids in solder joints has not been clarifi
Publikováno v:
The Proceedings of Ibaraki District Conference. :109-110
Publikováno v:
ASME 2011 Pacific Rim Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Systems, MEMS and NEMS: Volume 2.
Electromigration current densities in Cu and Al lines on a silicon die exceed 1.0 × 106 A/cm2 . However, solder joints can only withstand electromigration current densities below about 1.0 × 104 A/cm2 . Thus, electromigration in solder joints will