Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Nobuaki Kaneno"'
Autor:
S. Takamiya, Nobuaki Kaneno, Akihiro Shima, S. Karakida, Shigeru Mitsui, Yutaka Mihashi, Motoharu Miyashita
Publikováno v:
Journal of Crystal Growth. 145:662-667
High-quality and highly uniform strained InGaAs/ AlGaAs quantum-well structures have been grown successfully metalorganic chemical vapor deposition (MOCVD) using a high-speed rotating-disk reactor in which growth on three wafers of 3-inch diameter ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7efef3353e751e58f59d23271b96a75
https://doi.org/10.1016/0022-0248(94)91123-1
https://doi.org/10.1016/0022-0248(94)91123-1
Autor:
M. Tsugami, S. Takamiya, Shigeru Mitsui, Yutaka Mihashi, N. Fujii, Nobuaki Kaneno, Motoharu Miyashita
Publikováno v:
Journal of Crystal Growth. 141:22-28
The influence of oxygen incorporation into the epitaxial layers on the threshold current density of AlGaAs multiple quantum well (MQW) lasers grown by metalorganic chemical vapor deposition (MOCVD) is studied quantitatively. It is shown that reductio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7ed09313a3cad3a9a8c4d5816aea527
https://doi.org/10.1016/0022-0248(94)90087-6
https://doi.org/10.1016/0022-0248(94)90087-6
Publikováno v:
Journal of Crystal Growth. 134:35-42
Selective metalorganic chemical vapor deposition (MOCVD) growth of GaAs on Al 0.48 Ga 0.52 As combined with in situ HCl gas etching was investigated. In the case that AlGaAs surface was oxidized prior to the in situ HCl gas etching, accumulation of b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c56810d99cc4abc8835a8d82ca3d6d7e
https://doi.org/10.1016/0022-0248(93)90006-i
https://doi.org/10.1016/0022-0248(93)90006-i
Autor:
Toshio Murotani, Motoharu Miyashita, Akihiro Shima, S. Karakida, Norio Hayafuji, Hirotaka Kizuki, Yutaka Mihashi, S. Kageyama, Nobuaki Kaneno
Publikováno v:
Journal of Crystal Growth. 133:281-288
Successful large-scale (twelve 2 inch diamter wafers/run) metalorganic chemical vapor deposition (MOCVD) growth of AlGaAs multiple quantum well (MQW) structure for 780 nm high-power lasers using a barrel-shaped reactor is demonstrated. Excellent unif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1da1a326c43f2353b95d276031c58842
https://doi.org/10.1016/0022-0248(93)90166-t
https://doi.org/10.1016/0022-0248(93)90166-t
Autor:
Hirotaka Kizuki, Masao Aiga, Akihiro Shima, Etsuji Omura, Nobuaki Kaneno, Norio Hayafuji, Motoharu Miyashita, T. Kadowaki, T. Shiba, Shouichi Karakida, Ikeda Kenji, T. Miura
Publikováno v:
Laser Diode Technology and Applications IV.
An approach to mass-production of triple quantum well lasers with a buried-ridge, loss-guided inner-stripe structure is demonstrated, using a large-scale metalorganic chemical vapor deposition. The lasers obtained from nine epi-wafers grown at one ti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2dfaa4edb3f7ff7e5b3f586c7f93a1c
https://doi.org/10.1117/12.59151
https://doi.org/10.1117/12.59151
Autor:
Naoto Yoshida, Toshitaka Aoyagi, Nobuaki Kaneno, T. Kadowaki, Takashi Murakami, Wataru Susaki, Y. Seiwa, Tatsuya Kimura, K. Mizuguchi
Publikováno v:
SPIE Proceedings.
Minimum threshold current density (Jth) less than 2.OkA/cm2 is obtained at optimum hole concentration in the Zn-doped cladding layer (NH) of 3"4x 1O'7ca3 in the AlGaInP laser diodes. At NM lower than optimum one, Jth increases gradually due to poor e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ba68bba15d039d192be5e064e23fc6f
https://doi.org/10.1117/12.18295
https://doi.org/10.1117/12.18295
Publikováno v:
Conference on Lasers and Electro-Optics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48c9c5c10b38fffd714281b6de013e42
https://doi.org/10.1364/cleo.1986.tum5
https://doi.org/10.1364/cleo.1986.tum5
Publikováno v:
Conference on Lasers and Electro-Optics.
The phased-array laser is the most promising candidate to give high output power over 100 mW. At high-power cw operation, the output power-current characteristics tend to saturate because the Junction temperature rises due to the high current. Hence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a867370ab3a9808b5430aeda80d2e423
https://doi.org/10.1364/cleo.1986.tub3
https://doi.org/10.1364/cleo.1986.tub3
Autor:
Nobuaki Kaneno, Kimio Shigihara, S. Hinata, Y. Mihashi, Toshitaka Aoyagi, Yutaka Nagai, Wataru Susaki, Ikeda Kenji, Yoshito Seiwa
Publikováno v:
SPIE Proceedings.
Two kinds of modal filter for high power diode lasers with a wide stripe have been examined. The first one is a partially narrow region formed in the active region. Flared-SBA(self-aligned bent active layer) laser in which the active layer flares the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac1ea2653da0ec80c78544a3b45c09da
https://doi.org/10.1117/12.976357
https://doi.org/10.1117/12.976357
Publikováno v:
Electronics Letters. 21:780
The fabrication and characteristics of a novel index-guided phase-locked array are described. A single-lobe far-field pattern was obtained up to the CW output of 100 mW in the 3-element diode laser.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d438f710b7810ca2e0a49f570c21d7c4
https://doi.org/10.1049/el:19850550
https://doi.org/10.1049/el:19850550