Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Noam Sicron"'
Autor:
Philip C. Klipstein, Eran Armon, Eran Avnon, Yael Benny, Maya Brumer, Yossi Cohen, Nethanel Fraenkel, Sivan Gliksman, Alex Glozman, Noam Hadari, Itay Hirsch, Moti Katz, Olga Klin, Lidia Langof, Inna Lukomsky, Illia Marderfeld, Hadar Nahor, Michal Nitzani, David Rakhmilevich, Shai Schusterman, Ilana Shafir, Itay Shtrichman, Lior Shkedy, Noam Sicron, Noam Snapi, Nehemia Yaron
Publikováno v:
Infrared Technology and Applications XLVIII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3902e81c75d65022e77dbc592887cae0
https://doi.org/10.1117/12.2615622
https://doi.org/10.1117/12.2615622
Publikováno v:
Optics and Lasers in Engineering. 109:68-72
Bragg gratings were inscribed with a NIR femtosecond laser, cylindrical lens and a phase mask on the surface of a thin GaN film grown on a sapphire substrate. The phase mask was used to produce stable interference patterns from the focused femtosecon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d275106b7aaab0e7fe9df00729d39081
https://doi.org/10.1016/j.optlaseng.2018.05.006
https://doi.org/10.1016/j.optlaseng.2018.05.006
Publikováno v:
Infrared Physics & Technology. 84:63-71
Short Wave Infra-Red (SWIR) photodetectors operating above the response cutoff of InGaAs- based detectors (1.7–2.5 μm) are required for both defense and civil applications. Type II Super-Lattices (T2SL) were recently proposed For near- room temper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::978a9b4889f94eb71849ac6e11a3a25c
https://doi.org/10.1016/j.infrared.2017.02.003
https://doi.org/10.1016/j.infrared.2017.02.003
Autor:
N. Snapi, D. Cohen-Elias, A. Glozman, Noam Sicron, Olga Klin, Eliezer Weiss, M. Katz, Ohad Westreich, I. Shafir
Publikováno v:
Applied Physics Letters. 118:063503
A molecular beam epitaxy-grown InGaAsSb p–n photodetector lattice matched to GaSb for extended short wave infrared is reported. Electrical and optical characteristics were analyzed at temperatures from 200 K to room temperature. The photodetectors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77ba11b7f20d90cf680b7110fe8cd316
https://doi.org/10.1063/5.0037192
https://doi.org/10.1063/5.0037192
Publikováno v:
Infrared Physics & Technology. 105:103210
We studied InAs/AlSb superlattice photodiodes grown on a GaSb substrate, for the extended short wavelength infrared range. Reducing the majority carrier concentration from 2 × 1016 cm−3 to 2 × 1015 cm−3 caused the carrier diffusion length, Ldif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5fc2d9264dd0cc16e0286d08a570ae1
https://doi.org/10.1016/j.infrared.2020.103210
https://doi.org/10.1016/j.infrared.2020.103210
Autor:
Yedidya Lior, Avi Zadok, Moshe Katzman, Moran Bin Nun, Yossi Paltiel, Noam Sicron, Ohad Westreich, Dvir Munk
Publikováno v:
Optical Materials Express
Gallium-nitride (GaN) is a promising material platform for integrated electro-optic devices due to its wide direct bandgap, pronounced nonlinearities and high optical damage threshold. Low-loss ridge waveguides in GaN layers were recently demonstrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e86dc4a92d2c53f3b1315b236a37a2b
Autor:
Noam Sicron, Moshe Katzman, Ohad Westreich, Yossi Paltiel, Moarn Bin Nun, Dvir Munk, Yedidya Lior, Avi Zadok
Publikováno v:
Conference on Lasers and Electro-Optics.
Four-wave mixing at 1550 nm wavelength is demonstrated in a GaN ridge waveguide for the first time. A nonlinear coefficient of 1.6±0.45 [Wxm]−1 is measured. The nonlinear parameter of GaN is estimated as 3.4±1e-18 [m2/W].
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d677ea5df2173f249445f4fb6e804bd
https://doi.org/10.1364/cleo_si.2018.sf2a.4
https://doi.org/10.1364/cleo_si.2018.sf2a.4
Publikováno v:
physica status solidi (a). 212:1043-1048
We report the fabrication and characterization of GaN/AlGaN ridge waveguides (WG). The “ridge” design was chosen to ensure low propagation loss. The fabrication process included four steps that could be easily regulated. GaN and AlGaN cladding la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65025deb6ec801571eedf03c9408135b
https://doi.org/10.1002/pssa.201431663
https://doi.org/10.1002/pssa.201431663
Publikováno v:
physica status solidi (a). 215:1700551
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7dde6d43c29424746c55dc791e3b32e2
https://doi.org/10.1002/pssa.201700551
https://doi.org/10.1002/pssa.201700551
Publikováno v:
Applied Physics Letters. 111:022103
Optical losses in c-plane (0001) GaN ridge waveguides, containing Mg-doped layers, were measured at 1064 nm, using the Fabry-Perot method. The losses increase linearly with the modal content of the p-layer, indicating that the absorption in these wav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df86043acf782a72730bec31b0467088
https://doi.org/10.1063/1.4992103
https://doi.org/10.1063/1.4992103