Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Noël, Wilck"'
Autor:
Dirk König, Michael Frentzen, Daniel Hiller, Noël Wilck, Giovanni Di Santo, Luca Petaccia, Igor Píš, Federica Bondino, Elena Magnano, Joachim Mayer, Joachim Knoch, Sean C. Smith
Publikováno v:
Advanced Physics Research, Vol 2, Iss 5, Pp n/a-n/a (2023)
Abstract The electronic structure of SiO2‐ versus Si3N4‐coated low nanoscale intrinsic silicon (Si) shifts away from versus toward the vacuum level Evac, originating from the Nanoscale Electronic Structure Shift Induced by Anions at Surfaces (NES
Externí odkaz:
https://doaj.org/article/f1c1a78abd8b464bb3ac005e1c95e162
Autor:
Dirk König, Daniel Hiller, Noël Wilck, Birger Berghoff, Merlin Müller, Sangeeta Thakur, Giovanni Di Santo, Luca Petaccia, Joachim Mayer, Sean Smith, Joachim Knoch
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 2255-2264 (2018)
Impurity doping of ultrasmall nanoscale (usn) silicon (Si) currently used in ultralarge scale integration (ULSI) faces serious miniaturization challenges below the 14 nm technology node such as dopant out-diffusion and inactivation by clustering in S
Externí odkaz:
https://doaj.org/article/3bd003cc63f146c3a3bfcbbacadb1276
Autor:
Joachim Knoch, Merlin Müller, Federica Bondino, Igor Píš, Dirk König, Sara Gonzalez, Noël Wilck, Michael Frentzen, Sean C. Smith, Giovanni Di Santo, Silvia Nappini, Joachim Mayer, Luca Petaccia, B. Berghoff
Publikováno v:
ACS Applied Materials & Interfaces. 13:20479-20488
Impurity doping in silicon (Si) ultra-large-scale integration is one of the key challenges which prevent further device miniaturization. Using ultraviolet photoelectron spectroscopy and X-ray absorption spectroscopy in the total fluorescence yield mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05d37cdc7d7d5064f9b0185526329c43
https://doi.org/10.1021/acsami.0c22360
https://doi.org/10.1021/acsami.0c22360
Autor:
Dirk König, Michael Frentzen, Daniel Hiller, Noël Wilck, Giovanni Di Santo, Luca Petaccia, Igor Píš, Federica Bondino, Elena Magnano, Joachim Mayer, Joachim Knoch, Sean C. Smith
The electronic structure of low nanoscale (LNS) intrinsic silicon (i-Si) embedded in SiO2 vs. Si3N4 shifts away from vs. towards the vacuum level Evac, as described by the Nanoscale Electronic Structure Shift Induced by Anions at Surfaces (NESSIAS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4fe3cb7ce5f1e003c850e48291e33db0
Autor:
Dirk, König, Michael, Frentzen, Noël, Wilck, Birger, Berghoff, Igor, Píš, Silvia, Nappini, Federica, Bondino, Merlin, Müller, Sara, Gonzalez, Giovanni, Di Santo, Luca, Petaccia, Joachim, Mayer, Sean, Smith, Joachim, Knoch
Publikováno v:
ACS applied materialsinterfaces. 13(17)
Impurity doping in silicon (Si) ultra-large-scale integration is one of the key challenges which prevent further device miniaturization. Using ultraviolet photoelectron spectroscopy and X-ray absorption spectroscopy in the total fluorescence yield mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::de0fd1f3fce755c09d0fc755c848ba87
https://pubmed.ncbi.nlm.nih.gov/33878265
https://pubmed.ncbi.nlm.nih.gov/33878265
Autor:
Sangeeta Thakur, Luca Petaccia, Giovanni Di Santo, Daniel Hiller, Noël Wilck, Merlin Müller, Sean C. Smith, B. Berghoff, Dirk König, Joachim Mayer, Joachim Knoch
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 2255-2264 (2018)
Beilstein Journal of Nanotechnology
Beilstein journal of nanotechnology 9, 2255-2264 (2018). doi:10.3762/bjnano.9.210
Beilstein Journal of Nanotechnology
Beilstein journal of nanotechnology 9, 2255-2264 (2018). doi:10.3762/bjnano.9.210
Beilstein journal of nanotechnology 9, 2255-2264 (2018). doi:10.3762/bjnano.9.210
Published by Beilstein-Institut zur Förderung der Chemischen Wissenschaften, Frankfurt, M.
Published by Beilstein-Institut zur Förderung der Chemischen Wissenschaften, Frankfurt, M.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ca446c164ed1ea1ea7816f57fb62bb30
https://doaj.org/article/3bd003cc63f146c3a3bfcbbacadb1276
https://doaj.org/article/3bd003cc63f146c3a3bfcbbacadb1276
Autor:
Noël Wilck, Sean C. Smith, Giovanni Di Santo, Dirk König, Luca Petaccia, Joachim Mayer, Joachim Knoch, Alexander Meledin, B. Berghoff, Daniel Hiller
Publikováno v:
Physical Review Applied. 12
In semiconductor physics for electronics, conventional impurity doping presents a major obstacle to further miniaturization for ultralarge-scale integration. The authors discuss a phenomenon occurring at deep nanoscale Si volumes with a large surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::294b2cb4fa20742e23ecd92c9ab1f52c
https://doi.org/10.1103/physrevapplied.12.054050
https://doi.org/10.1103/physrevapplied.12.054050
Autor:
Maarten Debucquoy, Noël Wilck, Barry O'Sullivan, Joachim Knoch, S. Starschich, S. Nordmann, Joachim John, B. Berghoff, A. Hessel
Publikováno v:
Renewable Energy. 94:90-95
We present a silicon-based, monolithic multi-junction solar device that is suitable for the sustainable and reliable production of hydrogen. It is based on an interdigitated back-contact (IBC) solar cell which is modified, so that the p- and n-region
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e11e023cfd697b56308dc4aaaf1f8e8f
https://doi.org/10.1016/j.renene.2016.03.050
https://doi.org/10.1016/j.renene.2016.03.050
Autor:
A. Gumprich, U. Künzelmann, K. T. Kallis, F. Schütte, Noël Wilck, Christoph Stampfer, Joachim Knoch, M.R. Müller, S. Engels
Publikováno v:
Microelectronic Engineering. 119:95-99
Graphical abstractDisplay Omitted A buried triple-gate (BTG) structure with three independently controllable gates.Optimization of the BTG structure for graphene visibility by computer simulation.Fabrication of a 30nm wide and 5.5microns long graphen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b10fa1ed3208b6ab301a2af30420a0e
https://doi.org/10.1016/j.mee.2014.02.001
https://doi.org/10.1016/j.mee.2014.02.001
Autor:
Stephan Suckow, Martin Kittler, Maryam Beigmohamadi, B. Berghoff, Bernd Spangenberg, Teimuraz Mchedlidze, Rakesh Sohal, Noël Wilck, Tzanimir Arguirov, Joachim Mayer
Publikováno v:
physica status solidi (a). 208:588-591
Comparative structural analyses of a crystallized, 60 nm thick silicon film deposited on quartz substrate were performed using high resolution transmission electron microscopy (HRTEM) and Raman spectroscopy (RS). Both methods suggest high degree of c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea804f8a35b56db3d7ab2c1344f1ada3
https://doi.org/10.1002/pssa.201000156
https://doi.org/10.1002/pssa.201000156