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pro vyhledávání: '"Nk K. Kim"'
Autor:
Yg G. Lee, Es S. Choi, Ji I. Lee, Jh H. Choi, Tw W. Hong, Sc C. Ur, Sk K. Hong, Sk Choi Si-Kyung Choi, Sy Y. Kweon, Hs S. Yu, Sj J. Yeom, Ih H. Kim, Nk K. Kim, Hj J. Sun, Sl L. Ryu, Kw W. Cho
Publikováno v:
Integrated Ferroelectrics. 81:113-122
Metallization properties of TiN/Al/Ti (metal-1) layers deposited by sputtering method were evaluated in a new 16 Mb FeRAM device. The two main features of the device were double W bit-line and Pt/(Bi,La)4Ti3O12/Pt ferroelectric capacitor. The metal-1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91b88f36f72dee74c5a3d673e8e37b9b
https://doi.org/10.1080/10584580600659910
https://doi.org/10.1080/10584580600659910
In realizing devices using ZnO, a key challenge is the production of p-type material. Substitution of oxygen by a group-V impurity is thought to result in deep acceptor levels, but a candidate made up from a complex of a group-V impurity (P, As, Sb)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::67311b005b8d05a5471567ff5ef2da20
