Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Nivin Alktash"'
Autor:
Fangfang Huo, Ruslan Muydinov, Bertwin Bilgrim Otto Seibertz, Can Wang, Manuel Hartig, Nivin Alktash, Peng Gao, Bernd Szyszka
Publikováno v:
Heliyon, Vol 10, Iss 10, Pp e30943- (2024)
SnO2 and tantalum doped SnO2 (TTO) thin films were prepared using reactive hollow cathode gas flow sputtering (GFS) on glass substrates. An in-situ heating process under vacuum preceded the sputtering. The resistivity of the tin oxide films was reduc
Externí odkaz:
https://doaj.org/article/cce90d6dd58446bbb6b151561b576c07
Autor:
Sri Hari Bharath Vinoth Kumar, Ruslan Muydinov, Natalia Maticiuc, Nivin Alktash, Marin Rusu, Bertwin Bilgrim Otto Seibertz, Hans Köbler, Antonio Abate, Thomas Unold, Iver Lauermann, Bernd Szyszka
Publikováno v:
Advanced Energy & Sustainability Research, Vol 5, Iss 4, Pp n/a-n/a (2024)
Nickel oxide (NiO1+δ) is a versatile material used in various fields such as optoelectronics, spintronics, electrochemistry, and catalysis which is prepared with a wide range of deposition methods. Herein, for the deposition of NiO1+δ films, the re
Externí odkaz:
https://doaj.org/article/a7930723beee4189b8b353d2c84caec3
Autor:
Alexander Steigert, Danny Kojda, Josefa Ibaceta-Jaña, Daniel Abou-Ras, René Gunder, Nivin Alktash, Klaus Habicht, Markus R. Wagner, Reiner Klenk, Simone Raoux, Bernd Szyszka, Iver Lauermann, Ruslan Muydinov
Transparent conductive materials based on indium oxide remain yet irreplaceable in various optoelectronic applications. Amorphous oxides appear especially attractive for technology as they are isotropic, demonstrate relatively high electron mobility
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c2ca0c6973d28a5bdf483bc20a6b6cc5
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=105325
http://www.helmholtz-berlin.de/pubbin/oai_publication?VT=1&ID=105325
