Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Nivedita Biswas"'
Autor:
Ayan Mondal, Nilanjan Das, Rituparna Banerjee, Sunanda Batabyal, Sohini Gangopadhyay, Harisankar Ray, Nivedita Biswas, Sudipto Mandal
Publikováno v:
Ecology, Economy and Society – The INSEE Journal, Vol 6, Iss 1 (2023)
This study investigates the dynamic behaviour of a rice field ecosystem and aims to define its integral features using the stability concept of an ecological goal function. This function is based on the extremal principles of thermodynamics, which as
Externí odkaz:
https://doaj.org/article/2639f17727724395ad7c8a5a2fa5c8e5
Publikováno v:
The Journal of Immunology. 202:135.27-135.27
Staphylococcal enterotoxins (SE) induce powerful T cell stimulation with specificity for the variable beta (Vβ) region of the T cell receptor (TCR). Additionally, MHC in mice (H2) and humans (human leukocyte antigen; HLA) differ in binding superanti
Autor:
Ramasamy Ravindran, M.T. Othman, Narendra Mehta, Suchi Guha, Minseong Yun, Nivedita Biswas, Shubhra Gangopadhyay, Keshab Gangopadhyay
Publikováno v:
ECS Transactions. 3:535-544
Through an electron beam evaporation process, silver nanoparticles (Ag-nps) were introduced into dielectric thin-films. Silver incorporation into the oxide films resulted in a distribution of insulating Ag-nps at a density of ~10^12 particles/cm^2. F
Publikováno v:
ECS Transactions. 1:295-303
Effect of varying the composition of nickel and silicon in NixSiy on the work function of nickel silicide gates was investigated. Composition of nickel and silicon was varied by i) co-sputtering Ni and Si and ii) by changing the layer thickness of ni
Autor:
Peter Leo Knopick, Travis D Alvine, Nivedita Biswas, Matthew L Nilles, David S Terman, David S Bradley
Publikováno v:
The Journal of Immunology. 198:79.34-79.34
SEG and SEI are primordial S. aureus superantigens (SAgs) notably unaccompanied by human neutralizing antibodies that have hampered the use of classic SAgs as cancer therapeutics. Here we show SEG/SEI presented from a HLA-DQ8αβ (HLA-DQA*0301 and HL
Publikováno v:
IEEE Electron Device Letters. 28:555-557
This letter investigates the work function tuning of nickel/gadolinium (Ni/Gd) fully silicided (FUSI) gate electrodes on HfSiOx dielectrics. It was found that as the percentage of Gd in the Ni/Gd increased from 10% to 30%, the effective work function
Autor:
Rashmi Jha, Jae-Hoon Lee, Nivedita Biswas, Veena Misra, Bei Chen, Bongmook Lee, Eric Garfunkel, L. Wielunski, H. Lazar
Publikováno v:
IEEE Electron Device Letters. 27:228-230
This letter evaluates Ru and W capping layers for MoTa metal gate electrodes in MOS capacitor applications. The authors report that the oxygen diffusion from the capping layer plays an important role in determining the MoTa alloy effective work funct
Autor:
H.R. Harris, Sergey A. Nikishin, S. Gangopadhyay, N. Mehta, Nivedita Biswas, Henryk Temkin, Kisik Choi, A. Chandolu, G. Kipshidze
Publikováno v:
Applied Physics Letters. 81:1065-1067
Hafnium dioxide films have been deposited using reactive electron beam evaporation in oxygen on hydrogenated Si(100) surfaces. The capacitance–voltage curves of as-deposited metal(Ti)–insulator–semiconductor structures exhibited large hysteresi
Autor:
Nivedita Biswas, H. Lazar, Prashant Majhi, Jason Gurganus, G. Brown, Rashmi Jha, Jae-Hoon Lee, Veena Misra, Bei Chen
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
The workfunction behavior and stability of several candidate metal gate electrodes on HfO/sub 2/ was carefully examined and correlated with processing parameters such as anneal temperatures and oxygen exposures. Transition metals and their nitrides,
Autor:
Veena Misra, Nivedita Biswas, Mehmet C. Öztürk, Bei Chen, Daniel J. Lichtenwalner, Steven Novak
Publikováno v:
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
We present two new ternary alloy silicides with tunable work function ranging between 4.27eV to 4.7eV and 4.8eV to 5.0eV respectively for dual metal gate CMOS applications. NixTa1-xSi gates were investigated for NMOS and NixPt1-xSi gates were investi