Zobrazeno 1 - 10
of 78
pro vyhledávání: '"Nitrure de bore"'
Autor:
David, Carolane
La structure spécifique des nanotubes rend ce matériau très intéressant dans l’élaboration de nanohybrides. La cavité interne des nanotubes permet l’encapsulation de molécule laissant la paroi externe libre pour une fonctionnalisation. Les
Externí odkaz:
http://hdl.handle.net/1866/27022
Autor:
Plaud, Alexandre
Publikováno v:
Autre [cond-mat.other]. Université Paris-Saclay, 2020. Français. ⟨NNT : 2020UPAST002⟩
Hexagonal boron nitride (hBN) is a lamellar wide indirect bandgap semiconductor (> 6 eV). The other lamellar boron nitride phase is rhombohedral (rBN), but much less known and studied. The goal of this thesis is the study of the excitons source of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::b2421b4fde0939a50f5fa51955413f18
https://tel.archives-ouvertes.fr/tel-03341550
https://tel.archives-ouvertes.fr/tel-03341550
Autor:
Turani-I-Belloto, Kevin
Ammonia borane NH3BH3 (AB), a remarkable hydrogen storage material carrying 19.6 wt% of hydrogen, owns attractive properties. It (in thermolytic conditions) has been understandably much investigated within the past two decades leading to destabilizat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______166::da563134accb70530d6d86432ecb62eb
https://theses.hal.science/tel-03631014
https://theses.hal.science/tel-03631014
Autor:
Pelini, Thomas
Publikováno v:
Physics [physics]. Université Montpellier, 2019. English. ⟨NNT : 2019MONTS139⟩
The purpose of this thesis was to explore and caracterize optically the point defects in hexagonal boron nitride. The study of defects in this semiconductor is of fundamental importance firstly for the material science in which it plays a key role th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2592::1b5e515595b4fbf5debfe8b2913c7caf
https://tel.archives-ouvertes.fr/tel-02986321v2/document
https://tel.archives-ouvertes.fr/tel-02986321v2/document
Autor:
Pelini, Thomas
Publikováno v:
Physics [physics]. Université Montpellier, 2019. English. ⟨NNT : 2019MONTS139⟩
The purpose of this thesis was to explore and caracterize optically the point defects in hexagonal boron nitride. The study of defects in this semiconductor is of fundamental importance firstly for the material science in which it plays a key role th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::1b5e515595b4fbf5debfe8b2913c7caf
https://tel.archives-ouvertes.fr/tel-02986321v2/document
https://tel.archives-ouvertes.fr/tel-02986321v2/document
Autor:
Kasri, Salima
Publikováno v:
Génie des procédés. Université Sorbonne Paris Cité, 2019. Français. ⟨NNT : 2019USPCD056⟩
The aim of this thesis is to develop and optimize a new hexagonal boron nitride (h-BN) deposition reactor on large surfaces using an array of micro hollow cathode discharges (MHCD) in a nitrogen/argon mixture. h-BN is a strategic material for strong
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______212::350698bd2f7696bd67fdde5c5bb6d0d8
https://tel.archives-ouvertes.fr/tel-03180054
https://tel.archives-ouvertes.fr/tel-03180054
Autor:
Kasri, Salima
Publikováno v:
Génie des procédés. Université Sorbonne Paris Cité, 2019. Français. ⟨NNT : 2019USPCD056⟩
The aim of this thesis is to develop and optimize a new hexagonal boron nitride (h-BN) deposition reactor on large surfaces using an array of micro hollow cathode discharges (MHCD) in a nitrogen/argon mixture. h-BN is a strategic material for strong
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2592::350698bd2f7696bd67fdde5c5bb6d0d8
https://tel.archives-ouvertes.fr/tel-03180054
https://tel.archives-ouvertes.fr/tel-03180054
Autor:
Vuong, Phuong
Le nitrure de bore hexagonal (h-BN) est un semi-conducteur à large bande interdite (~ 6 eV) avec une stabilité thermique et chimique très élevées lui offrant la possibilité d'être utilisé dans des dispositifs fonctionnant dans des conditions
Externí odkaz:
http://www.theses.fr/2018MONTS075/document
Autor:
Vuong, Phuong
Publikováno v:
Physics [physics]. Université Montpellier, 2018. English. ⟨NNT : 2018MONTS075⟩
Hexagonal boron nitride (h-BN) is a wide bandgap (~ 6 eV) semiconductor with a very high thermal and chemical stability often used in devices operating under extreme conditions. The indirect nature of the bandgap in h-BN is investigated by both theor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2592::778940b97bda9a262d08a8cf3eb6093e
https://tel.archives-ouvertes.fr/tel-02152566/document
https://tel.archives-ouvertes.fr/tel-02152566/document