Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Nitin K. Ingle"'
Materials Technology Co-Optimization of Self-Aligned Gate Contact for Advanced CMOS Technology Nodes
Autor:
Keyvan Kashefizadeh, Nancy Fung, T. E. Sato, Nitin K. Ingle, W. Xu, W. Lei, Benjamin Colombeau, Anchuan Wang, Yu Lei, Ajay Bhatnagar, Ashish Pal, P. Wang, Sanjay Natarajan, D. Cui, Angada B. Sachid, Avgerinos V. Gelatos, Blessy Alexander, C. Lee, B. Brown, D. Hwang, Sean M. Seutter, K. Mikhaylichenko, T. H. Ha, M. Kawasaki, Yi Xu, Buvna Ayyagari, J. Ferrell, M. Cogorno, El Mehdi Bazizi, T. Luu
Publikováno v:
2020 IEEE Symposium on VLSI Technology.
Materials technology co-optimization (MTCO) modeling is used for the first time to simulate Performance-Power-Area (PPA) benefits of self-aligned gate contact (SAGC) technology. We also demonstrate a process flow to integrate novel CMOS compatible ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfd36c8e75e4bc6d493f390f472b90e4
https://doi.org/10.1109/vlsitechnology18217.2020.9265043
https://doi.org/10.1109/vlsitechnology18217.2020.9265043
Autor:
N. Derhacobian, V. Banthia, Mihaela Balseanu, Nitin K. Ingle, Zoran Krivokapic, Shankar Venkataraman, Reza Arghavani, H. M'Saad, Scott E. Thompson, U. Aghoram, Ellie Yieh, Ken MacWilliams, Zheng Yuan, Li-Qun Xia
Publikováno v:
IEEE Transactions on Electron Devices. 54:362-365
Experimental data show that tensile stress improves and compressive stress degrades retention time for nonvolatile memory (NVM) devices. External mechanical tensile stress and compressive stress are introduced into the NVM floating-gate and nitride t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5fc26824826c1a374ab4837657a2a78
https://doi.org/10.1109/ted.2006.888827
https://doi.org/10.1109/ted.2006.888827
Autor:
Nitin K. Ingle, Reza Arghavani, K. Lilja, Zheng Yuan, V. Banthia, A. Mascarenhas, K-B Jung, Shankar Venkataraman, Gamani Karunasiri, P. Leon, S. Yoon, M. Seamons
The article of record as published may be found at http://dx.doi.org/10.1109/TED.2004.835993 This brief focuses on the physical characteristics of three dielectric films which can induce a significant degree of tensile or compressive stress in the ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c1872fc47b6a5e7adbf8c901d1707e7
https://hdl.handle.net/10945/60317
https://hdl.handle.net/10945/60317
