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pro vyhledávání: '"Nithin, Abraham"'
Publikováno v:
In Anaesthesia & Intensive Care Medicine November 2019 20(11):621-629
Publikováno v:
Anaesthesia & Intensive Care Medicine. 23:594-601
Quantitative physicochemical models of human acid–base physiology filled a void between clinical acid–base analysis and general fluid physiology. Established approaches centred on the Henderson–Hasselbalch (HH) equation allow satisfactory bedsi
Publikováno v:
ACS nano. 16(4)
Generators of random sequences used in high-end applications such as cryptography rely on entropy sources for their indeterminism. Physical processes governed by the laws of quantum mechanics are excellent sources of entropy available in nature. Howe
Publikováno v:
ACS Nano. 14:15678-15687
Van der Waals (vdW) tunnel junctions are attractive due to their atomically sharp interface, gate tunablity, and robustness against lattice mismatch between the successive layers. However, the negative differential resistance (NDR) demonstrated in th
Autor:
Nithin Abraham, Rekha K. James
Publikováno v:
Journal of Computational Electronics. 19:304-309
An improved tunnel field-effect transistor with an L-shaped gate and channel (LLTFET) is proposed herein. The new structure shows an increased ON-current without any change in the overall area in comparison with state-of-the-art structures. The L-sha
Publikováno v:
Physical Review B. 103
Monolayer transition-metal dichalcogenide (TMDC) semiconductors host strongly bound two-dimensional excitonic complexes, and form an excellent platform for probing many-body physics through manipulation of Coulomb interaction. The quantum confined St
Autor:
Kausik Majumdar, Nithin Abraham, Takashi Taniguchi, N. Ravishankar, Kenji Watanbe, Pushkar Dasika, Debadarshini Samantaray, Krishna Murali
Gate-all-around nanowire transistor, due to its extremely tight electrostatic control and vertical integration capability, is a highly promising candidate for sub-5 nm technology node. In particular, the junctionless nanowire transistors are highly s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de97f5c0bd153b21da8dd48398396e76
http://arxiv.org/abs/2102.03507
http://arxiv.org/abs/2102.03507
Publikováno v:
ACS nano. 14(11)
van der Waals (vdW) tunnel junctions are attractive because of their atomically sharp interface, gate tunability, and robustness against lattice mismatch between the successive layers. However, the negative differential resistance (NDR) demonstrated
Publikováno v:
Das, S, Kallatt, S, Abraham, N & Majumdar, K 2020, ' Gate-tunable trion switch for excitonic device applications ', Physical Review B, vol. 101, no. 8, 081413 . https://doi.org/10.1103/PhysRevB.101.081413
Trions are excitonic species with a positive or negative charge, and thus, unlike neutral excitons, the flow of trions can generate a net detectable charge current. Trions under favorable doping conditions can be created in a coherent manner using re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ff6c03eba586db00b96c5e48ee17a7e5
Autor:
Kausik Majumdar, Garima Gupta, Nithin Abraham, Medha Dandu, Sarthak Das, Sangeeth Kallatt, Takashi Taniguchi, Kenji Watanabe, Krishna Murali
Publikováno v:
Das, S, Dandu, M, Gupta, G, Murali, K, Abraham, N, Kallatt, S, Watanabe, K, Taniguchi, T & Majumdar, K 2020, ' Highly Tunable Layered Exciton in Bilayer WS2 : Linear Quantum Confined Stark Effect versus Electrostatic Doping ', ACS Photonics, vol. 7, no. 12, pp. 5386-5393 . https://doi.org/10.1021/acsphotonics.0c01159
In 1H monolayer transition metal dichalcogenide, the inversion symmetry is broken, while the reflection symmetry is maintained. On the contrary, in the bilayer, the inversion symmetry is restored, but the reflection symmetry is broken. As a consequen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cf113750a146730c3a39ca382ab98714