Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Nitai Paitya"'
Publikováno v:
Silicon. 14:3835-3841
Publikováno v:
Journal of Computational Electronics. 20:855-863
In this article, the electrical behavior of laterally grown novel short-channel III–V/Si heterostructure double gate triple material PiN tunneling graphene nanoribbon field effect transistor (DG-TM-PiN-TGNFET) has been studied based on their quantu
Publikováno v:
Materials Today: Proceedings. 43:3715-3719
A novel tunneling field effect transistor having extended gate with source(s) splitted (EG-SS-TFET) is proposed in this paper. The device physics of our proposed structure is compared with conventional L-shaped TFET for better device performance. The
Publikováno v:
Silicon. 13:1453-1459
In this paper, a new two-dimensional analytical model for our proposed InAs/Si based double-gate dual-metal tunnel field-effect transistor (DG-TFET) with graphene nano-ribbon is presented. Incorporating group III-V material in source – channel junc
Publikováno v:
Silicon. 13:719-727
A new two-dimensional analytical model for surface potential, electric field, band-to-band (B2B) tunneling rate and transconductance of a novel double gate triple material PiN tunneling graphene nano-ribbon field effect transistor (DG-TM-PiN-TGNFET)
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789811963001
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49adb75c575db2f7f58d3645bb8227ce
https://doi.org/10.1007/978-981-19-6301-8_13
https://doi.org/10.1007/978-981-19-6301-8_13
Autor:
Nitai Paitya, Ritam Dutta
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789811649462
The detail DC and AC analysis of a proposed novel Indium Arsenide (InAs)/Silicon (Si) heterojunction-based dual-gate triple metal P-i-N tunneling graphene nanoribbon field effect transistor (DG-TM-TGNFET) has been reported in this chapter. The novel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f65962b3afff22801f53a33e38c71a1
https://doi.org/10.1007/978-981-16-4947-9_17
https://doi.org/10.1007/978-981-16-4947-9_17
Autor:
Ritam Dutta, Nitai Paitya
Publikováno v:
Advances in Communication, Devices and Networking ISBN: 9789811629105
The continuous device structure degradation in nanoscaled device modeling restricts conventional tunnel field-effect transistor (TFET) to meet the best low-power applications. In this paper, dual-gate tunnel field-effect transistor (DG-TFET) with ult
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1e9b3fb7bc1675df6a7b8ae6ceeabb9
https://doi.org/10.1007/978-981-16-2911-2_4
https://doi.org/10.1007/978-981-16-2911-2_4
Publikováno v:
2021 Second International Conference on Electronics and Sustainable Communication Systems (ICESC).
This article mainly focuses on the typical implementation of Group III-V compound materials at the source region of a dual gate tri-metal n-type tunnel field effect transistor (DG-TM-TGNFET). Based on the carrier mobility and energy band gap, the dif
A two-dimensional analytical model for asymmetric extended source tunnel field effect transistor (AES-TFET) has been developed to obtain better device performance. The proposed device model has been analytically modelled and performed by solving 2-D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33543ec37f9a0bff81434150198fcbc5
https://doi.org/10.21203/rs.3.rs-347124/v1
https://doi.org/10.21203/rs.3.rs-347124/v1