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pro vyhledávání: '"Nishita Tokio"'
Publikováno v:
Journal of Photopolymer Science and Technology. 26:685-689
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8440aba9bf3b4192cfd97bf8e461bfd
https://doi.org/10.2494/photopolymer.26.685
https://doi.org/10.2494/photopolymer.26.685
Autor:
Nishita Tokio, Rikimaru Sakamoto
Publikováno v:
SPIE Proceedings.
In recent years, as next-generation lithography, various exposure techniques have been studied such as Extreme Ultraviolet Lithography (EUVL), Directed Self Assembly (DSA) and multiple patterning processes. In particular, EUVL is the most promising c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed4f120bb93d55ca4b53fa9d29893f5c
https://doi.org/10.1117/12.2218826
https://doi.org/10.1117/12.2218826
Autor:
Bang-Ching Ho, Nishita Tokio, Endo Takafumi, Ryuji Onishi, Noriaki Fujitani, Rikimaru Sakamoto, Yaguchi Hiroaki
Publikováno v:
SPIE Proceedings.
EUV lithography (EUVL) is the most promising candidate of next generation technology for hp20nm node device manufacturing and beyond. However, the power of light source, masks and photo resists are the most critical issues for driving the EUVL. Espec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00193e0faa3db510ebcc6d07d2db1c5a
https://doi.org/10.1117/12.2011489
https://doi.org/10.1117/12.2011489
Akademický článek
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Publikováno v:
Proceedings of SPIE; March 2016, Vol. 9779 Issue: 1 p977917-977917-8
Autor:
Somervell, Mark H., Fujitani, Noriaki, Sakamoto, Rikimaru, Endo, Takafumi, Onishi, Ryuji, Nishita, Tokio, Yaguchi, Hiroaki, Ho, Bang-Ching
Publikováno v:
Proceedings of SPIE; March 2013, Vol. 8682 Issue: 1 p868209-868209-7