Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Nishant Singh Jamwal"'
Publikováno v:
Micromachines, Vol 15, Iss 3, p 347 (2024)
Gallium oxide (Ga2O3) is a promising material for high-power semiconductor applications due to its wide band gap and high breakdown voltage. However, the current methods for fabricating Ga2O3 nanostructures have several disadvantages, including their
Externí odkaz:
https://doaj.org/article/2293e8ffddd04c9d9428f7ab7f063191
Publikováno v:
Energies, Vol 15, Iss 16, p 6005 (2022)
Silicon is one of the most used semiconductor materials around the world. This research was conducted on silicon to improve its opto-electrical properties including bandgap and optical conductivity using direct ultrafast pulsed nanostructure formatio
Externí odkaz:
https://doaj.org/article/a01bc98b2715445d843d674ebe7ed958
Publikováno v:
Nanomaterials, Vol 12, Iss 12, p 2061 (2022)
Gallium oxide, as an emerging semiconductor, has attracted a lot of attention among researchers due to its high band gap (4.8 eV) and a high critical field with the value of 8 MV/cm. This paper presents a review on different chemical and physical tec
Externí odkaz:
https://doaj.org/article/3b18b38a4323493c99e0e1d32129886f
Publikováno v:
Proceedings of the 6th International Conference on Theoretical and Applied Nanoscience and Nanotechnology (TANN'22).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c173319b444c7824d347b6f08faa9246
https://doi.org/10.11159/tann22.138
https://doi.org/10.11159/tann22.138
Publikováno v:
Optical Interference Coatings Conference (OIC) 2022.
We introduce a method for increasing silicon band gap via ultrashort laser pulse ionization. Different silicon nanostructures have been generated by varying the ablation scanning speed and the optical properties were examined.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e04dead3a1ae2716c9a297d3cae43272
https://doi.org/10.1364/oic.2022.md.4
https://doi.org/10.1364/oic.2022.md.4
Publikováno v:
Coatings
Volume 13
Issue 2
Pages: 375
Volume 13
Issue 2
Pages: 375
This work defines the generation of nanostructures on silicon and gold-coated silicon substrates by tuning the pulse duration of our proposed method: ultra-short laser pulses for in situ nanostructure generation (ULPING) under ambient conditions. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4fc93a7611227db9e76c9af807875a2e
https://doi.org/10.3390/coatings13020375
https://doi.org/10.3390/coatings13020375