Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Nis Hauke Hansen"'
Autor:
Martin Dressel, Ece Uykur, Frank Würthner, Nis Hauke Hansen, Jens Pflaum, M. Pinterić, Matthias Stolte, Seulki Roh
Publikováno v:
The Journal of Physical Chemistry C. 124:17829-17835
The n-type organic semiconductor, β-phase single crystalline dichloro naphthalene diimide, Cl2–NDI, is investigated in a broad frequency range via optical spectroscopy. The temperature-dependent ab...
Autor:
Nis Hauke Hansen, Patrick Waltereit, Ralf Lerner, Richard Reiner, Stefan Moench, Alin Fecioru, David Gomez
Publikováno v:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
This work reports on the progress of the hetero-integration of GaN-HEMTs on CMOS wafers by micro-transfer-printing (μTP). 200 V and 600 V class device types are successfully transferred from a GaN-on-Si source wafer to a processed CMOS target wafer.
Autor:
Ralf Lerner, Nis Hauke Hansen
Publikováno v:
ISPS'21 Proceedings.
Autor:
Jochen Brill, Nis Hauke Hansen, Xutang Tao, Jens Pflaum, Matthias Stolte, Thomas Musiol, Christian Burschka, Daniel Kälblein, Tao He, Frank Würthner
Publikováno v:
Nature Communications. 6
Physical properties of active materials built up from small molecules are dictated by their molecular packing in the solid state. Here we demonstrate for the first time the growth of n-channel single-crystal field-effect transistors and organic thin-
Autor:
Tao, He, Matthias, Stolte, Christian, Burschka, Nis Hauke, Hansen, Thomas, Musiol, Daniel, Kälblein, Jens, Pflaum, Xutang, Tao, Jochen, Brill, Frank, Würthner
Publikováno v:
Nature communications. 6
Physical properties of active materials built up from small molecules are dictated by their molecular packing in the solid state. Here we demonstrate for the first time the growth of n-channel single-crystal field-effect transistors and organic thin-
Autor:
Heinrich Schwoerer, A. K. Topczak, Egmont Rohwer, C. Wunderlich, Jens Pflaum, Nis Hauke Hansen
We present an investigation of the microscopic interplay between excitons and charge carriers by means of combined photoluminescence (PL) and charge carrier transport measurements on organic thin film transistors (OTFTs). For this purpose, the protot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::97a7f34b88c538f086c94058d056b0ef
Autor:
Sabine Laschat, Rebecca Woerner, Martin Butschies, Martin Kaller, Markus Mansueto, Nis Hauke Hansen, Jens Pflaum, Sven Sauer, Guenter Tovar, Angelika Baro
Publikováno v:
Langmuir : the ACS journal of surfaces and colloids. 28(22)
New triphenylene-based silanes 2-(-(chlorodimethylsilyl)-n-alkyl)-3, 6,7,10,11-penta-m-alkoxytriphenylene 4 (Tm-Cn) with n = 8 or 9 and m = 7, 8, 9, 10, or 11 were synthesized, and their self-assembly behavior in the liquid state and at glass and sil
Autor:
Masaaki Ikeda, Ute Zschieschang, Tsuyoshi Sekitani, Hirokazu Kuwabara, Nis Hauke Hansen, Takao Someya, Hagen Klauk, Jens Pflaum, Tatsuya Yamamoto, Kazuo Takimiya
Publikováno v:
69th Device Research Conference.
Due to its large-area capability and high resolution, photolithography is the preferred patterning method for pentacene thin-film transistors (TFTs) for display and circuit applications [1,2]. Since the morphology of thin pentacene films is very sens
Autor:
Carsten Deibel, Jens Pflaum, Alberto Salleo, Benedikt Allendorf, Andreas Zusan, Vladimir Dyakonov, Koen Vandewal, Nis Hauke Hansen
Publikováno v:
Advanced Energy Materials. 4:1400922