Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Nirmaan, Shanker"'
Autor:
Suraj S. Cheema, Nirmaan Shanker, Shang-Lin Hsu, Yoonsoo Rho, Cheng-Hsiang Hsu, Vladimir A. Stoica, Zhan Zhang, John W. Freeland, Padraic Shafer, Costas P. Grigoropoulos, Jim Ciston, Sayeef Salahuddin
Publikováno v:
Science (New York, N.Y.), vol 376, iss 6593
The critical size limit of voltage-switchable electric dipoles has extensive implications for energy-efficient electronics, underlying the importance of ferroelectric order stabilized at reduced dimensionality. We report on the thickness-dependent an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a511ecb77272349022b5205b1137be55
https://doi.org/10.1126/science.abm8642
https://doi.org/10.1126/science.abm8642
Autor:
Michael Hoffmann, Ava Jiang Tan, Nirmaan Shanker, Yu-Hung Liao, Li-Chen Wang, Jong-Ho Bae, Chenming Hu, Sayeef Salahuddin
Publikováno v:
IEEE Electron Device Letters. 43:717-720
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02d008c727efb2a6b5423eb6c3a70cec
https://doi.org/10.1109/led.2022.3163354
https://doi.org/10.1109/led.2022.3163354
Autor:
Suraj S. Cheema, Nirmaan Shanker, Li-Chen Wang, Cheng-Hsiang Hsu, Shang-Lin Hsu, Yu-Hung Liao, Matthew San Jose, Jorge Gomez, Wriddhi Chakraborty, Wenshen Li, Jong-Ho Bae, Steve K. Volkman, Daewoong Kwon, Yoonsoo Rho, Gianni Pinelli, Ravi Rastogi, Dominick Pipitone, Corey Stull, Matthew Cook, Brian Tyrrell, Vladimir A. Stoica, Zhan Zhang, John W. Freeland, Christopher J. Tassone, Apurva Mehta, Ghazal Saheli, David Thompson, Dong Ik Suh, Won-Tae Koo, Kab-Jin Nam, Dong Jin Jung, Woo-Bin Song, Chung-Hsun Lin, Seunggeol Nam, Jinseong Heo, Narendra Parihar, Costas P. Grigoropoulos, Padraic Shafer, Patrick Fay, Ramamoorthy Ramesh, Souvik Mahapatra, Jim Ciston, Suman Datta, Mohamed Mohamed, Chenming Hu, Sayeef Salahuddin
Publikováno v:
Nature, vol 604, iss 7904
With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce the operating voltage1. This led to a fundamental changein the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4fe30529e321261100d5a1d53aa55c9
https://doi.org/10.1038/s41586-022-04425-6
https://doi.org/10.1038/s41586-022-04425-6
Autor:
Suraj Cheema, Nirmaan Shanker, Shang-Lin Hsu, Joseph Schaadt, Nathan Ellis, Matthew Cook, Ravi Rastogi, Robert Pilawa-Podgurski, Jim Ciston, Mohamed Mohamed, Sayeef Salahuddin
Dielectric electrostatic capacitors, due to their ultrafast charge-discharge capability, are attractive for high power energy storage applications. Along with ultrafast operation, on-chip integration can enable miniaturized energy storage devices for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4cf3093ed8b9be6c10726796651297a
https://doi.org/10.21203/rs.3.rs-2420676/v1
https://doi.org/10.21203/rs.3.rs-2420676/v1
Autor:
Sayeef Salahuddin, Ava J. Tan, Nirmaan Shanker, Chenming Hu, Li-Chen Wang, Yu-Hung Liao, Jong-Ho Bae
Publikováno v:
IEEE Electron Device Letters. 42:994-997
We demonstrate ferroelectric (FE) memory transistors on a crystalline silicon channel with endurance exceeding 1010 cycles. The ferroelectric transistors (FeFETs) incorporate a high- $\kappa $ interfacial layer (IL) of thermally grown silicon nitride
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f30ba42d9ec742ff9bd3d624ce091c4f
https://doi.org/10.1109/led.2021.3083219
https://doi.org/10.1109/led.2021.3083219
Autor:
Nirmaan Shanker, Li-Chen Wang, Suraj Cheema, Wenshen Li, Nilotpal Choudhury, Chenming Hu, Souvik Mahapatra, Sayeef Salahuddin
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38c2e06eadcc37100d4e17b87d0c6a53
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830440
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830440
Autor:
Chenming Hu, Li-Chen Wang, Ava J. Tan, Sayeef Salahuddin, Nirmaan Shanker, Yu-Hung Liao, Ming-Yen Kao, Daewoong Kwon, Suraj Cheema
Publikováno v:
IEEE Transactions on Electron Devices. 68:1346-1351
Measurements on ultrathin body negative-capacitance (NC) field-effect transistors are shown to display subthreshold behaviors that cannot be explained as a classical MOSFET. Subthreshold swing (SS) at low drain bias decreases with increased gate bias
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1c38d9cc8562dfc4619ad2343906d83
https://doi.org/10.1109/ted.2021.3049763
https://doi.org/10.1109/ted.2021.3049763
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9211af678f58397f6a34c180ff4e6ebb
https://doi.org/10.1109/iedm19574.2021.9720622
https://doi.org/10.1109/iedm19574.2021.9720622
Autor:
Chenming Hu, Daewoong Kwon, Nirmaan Shanker, Korok Chatterjee, Sayeef Salahuddin, Suraj Cheema, Yu-Hung Liao, Ava J. Tan
Publikováno v:
IEEE Electron Device Letters. 40:993-996
We report on negative capacitance FETs (NCFETs) with a 1.8-nm-thick Zr-doped HfO2 gate oxide layer fabricated on an FDSOI wafer. Hysteresis-free operation is demonstrated. When compared to a baseline that uses HfO2 gate oxide with the same thickness,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06172cbff3faa3d27942f02d7360d294
https://doi.org/10.1109/led.2019.2912413
https://doi.org/10.1109/led.2019.2912413
Autor:
Suraj S. Cheema, Nirmaan Shanker, Cheng‐Hsiang Hsu, Adhiraj Datar, Jongho Bae, Daewoong Kwon, Sayeef Salahuddin
Publikováno v:
Advanced Electronic Materials. 8:2270025
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7152cc421f902db1053fca1e1acc1708
https://doi.org/10.1002/aelm.202270025
https://doi.org/10.1002/aelm.202270025