Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Nirav C. Pandya"'
Publikováno v:
Thin Solid Films. 669:525-530
We report on the structural, optical and optoelectronic properties of CeO2 films grown by pulsed laser deposition for its possible use as optoelectronic switch device. (111) oriented highly uniform nano-structured CeO2 films of about 100 nm were grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::258c92fa6890f574d0a4968d01bbdbc9
https://doi.org/10.1016/j.tsf.2018.11.055
https://doi.org/10.1016/j.tsf.2018.11.055
Autor:
Poornima Sengunthar, Nirav C. Pandya, Saif A. Khan, Ambuj Tripathi, Rutvi J. Pandya, Sushant Zinzuvadiya, Utpal S. Joshi
Publikováno v:
Radiation Physics and Chemistry. 193:109503
In the present study, we report the structural and electrical properties of pulsed laser deposited (PLD) bilayers of BaFe12O19 (BaM) and La0.67Sr0.33MnO3 (LSMO) thin films deposited on platinized silica substrate. Structural and electrical variation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c08a01560f90b4fc781f1f788c7c32a2
https://doi.org/10.1016/j.radphyschem.2021.109503
https://doi.org/10.1016/j.radphyschem.2021.109503
Autor:
Nirav C. Pandya, Utpal S. Joshi
Publikováno v:
Journal of Materials Science: Materials in Electronics. 26:2445-2450
Growth, structural and electrical properties of perovskite type LaNiO3 thin film nanostructures using chemical solution deposition at annealing temperatures ranging from 550 to 800 °C has been optimized. Poly-vinyl alcohol was used as stabilizing ag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5430a9f2e2a201b44dd064f03f1612be
https://doi.org/10.1007/s10854-015-2704-1
https://doi.org/10.1007/s10854-015-2704-1
Publikováno v:
Journal of Physics D: Applied Physics. 50:255303
BiFeO3 (BFO) thin film nano-structures were grown by pulsed laser deposition (PLD) and their structural and dielectric responses were investigated over a broad frequency band of 10 kHz < f < 15 GHz. An on-chip reflection measurement technique was use
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::360e98f4b2132486a43548867fd86da9
https://doi.org/10.1088/1361-6463/aa6fd1
https://doi.org/10.1088/1361-6463/aa6fd1
Autor:
Nirav C. Pandya, Utpal S. Joshi
Publikováno v:
AIP Conference Proceedings.
Conducting oxides with perovskite crystal structure have many advantages over the simple Pt or Au, Pt based metal bottom electrodes (BE), particularly in fabrication of ferroelectric as well as resistive random access memory devices, if they possess
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dede68d3bd01fb68ca1810ed3a52625b
https://doi.org/10.1063/1.4872831
https://doi.org/10.1063/1.4872831
Publikováno v:
AIP Conference Proceedings.
Organic memory device showing resistance switching properties is a next-generation of the electrical memory unit. We have investigated the bistable resistance switching in current-voltage (I-V) characteristics of organic diode based on copper phthalo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dca94d13c5286f760a86b429eb98a83
https://doi.org/10.1063/1.4791239
https://doi.org/10.1063/1.4791239
Publikováno v:
AIP Conference Proceedings.
All oxide thin film transistors (TFT) with zinc oxide active layer were fabricated by chemical solution deposition (CSD) using aqueous solutions on glass substrate. Thin film transistors (TFTs) with amorphous zinc oxide as channel layers and poly-vin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::556a8a3a194f4ebcd2151f623bf95c81
https://doi.org/10.1063/1.4791412
https://doi.org/10.1063/1.4791412
Publikováno v:
Journal of Physics D: Applied Physics. 49:055301
Resistance switching and memory effects have been observed in a heterostructure consisting of BiFeO3 (BFO) on a LaNiO3 (LNO) conducting oxide bottom electrode fabricated by chemical solution deposition on quartz substrates. The phase purity and latti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5db3e29a5024451c3dccce9720551ae5
https://doi.org/10.1088/0022-3727/49/5/055301
https://doi.org/10.1088/0022-3727/49/5/055301