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Autor:
Niraj Man Shrestra, Yue-Han Wu, Edward Yi Chang, Tran Binh Tinh, Tung Tien Luong, Wei-Ching Huang, Yuan-Yee Wong, Franky Lumbantoruan
Publikováno v:
2014 IEEE International Conference on Semiconductor Electronics (ICSE2014).
The influence of TMAl preflow to the AlN buffer layer and GaN thin film was studied by Optical Microscope, Atomic Force Microscope, X-ray diffraction and Transmission Electron Microscope. Different duration of TMAl preflow lead to substantially diffe