Zobrazeno 1 - 10 of 117 pro vyhledávání: '"Niquet, Y.M."'
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Akademický článek
Application of Keating's valence force field model to non-ideal wurtzite materials
Autor: Camacho, D., Niquet, Y.M.
Publikováno v: In Physica E: Low-dimensional Systems and Nanostructures 2010 42(5):1361-1364
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4
Akademický článek
Electronic properties of InAs/GaAs nanowire superlattices
Autor: Niquet, Y.M.
Publikováno v: In Physica E: Low-dimensional Systems and Nanostructures 2007 37(1):204-207
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5
[Invited] Electronic doping : from bulk semiconductors to nanocrystals
Autor: Niquet, Y.M., Diarra, M., Pi, X., Allan, G., Delerue, C.
Publikováno v: Workshop on Coupling between Nanocrystals and Dopants, GdR 3531 NACRE
Workshop on Coupling between Nanocrystals and Dopants, GdR 3531 NACRE, 2013, Villiers-sur-Mer, France
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::6687d5aa9d43f7ebb234354af57be680
https://hal.archives-ouvertes.fr/hal-00878825
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6
Band offsets, wells and barriers in nanowire heterostructures : is the simple 'square wells and barriers' model always valid ?
Autor: Niquet, Y.M., Delerue, C.
Publikováno v: Materials Research Society Spring Meeting, MRS Spring 2012, Symposium AA : Inorganic Nanowires and Nanotubes-Synthesis, Properties, and Device Applications
Materials Research Society Spring Meeting, MRS Spring 2012, Symposium AA : Inorganic Nanowires and Nanotubes-Synthesis, Properties, and Device Applications, 2012, San Francisco, CA, United States
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::9dcc3eb6d2cd7fba31f59898291334be
https://hal.archives-ouvertes.fr/hal-00797756
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7
Fully atomistic simulations of phonon-limited mobility of electrons and holes in <001>-, <110>-, and <111>-oriented Si nanowires
Autor: Niquet, Y.M., Delerue, C., Rideau, D., Videau, Brice
Publikováno v: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, 2012, 59, pp.1480-1487. ⟨10.1109/TED.2012.2187788⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2012, 59, pp.1480-1487. ⟨10.1109/TED.2012.2187788⟩
Phonon-limited mobilities of electrons and holes in Si nanowires (NWs) with 〈001〉, 〈110〉, and 〈111〉 orientations are calculated in a fully atomistic framework for diameters up to 10 nm. Electron-phonon scattering rates are computed with a
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::925578e2b1ac025b5805b94b05007b09
https://hal.science/hal-00787798
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9
Influence of strains on the electron and hole mobility in silicon nanowires
Autor: Niquet, Y.M., Delerue, C.
Publikováno v: Proceedings of 15th International Workshop on Computational Electronics, IWCE-15
15th International Workshop on Computational Electronics, IWCE-15
15th International Workshop on Computational Electronics, IWCE-15, 2012, Madison, WI, United States. pp.203-204
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::92ed4a3221387f50b1f3fdb3867524d9
https://hal.science/hal-00801139
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10
Impurity and phonon scattering in silicon nanowires
Autor: Zhang, W., Persson, M.P., Mera, H., Delerue, C., Niquet, Y.M., Allan, G., Wang, E.
Publikováno v: American Physical Society March Meeting, APS March Meeting 2011
American Physical Society March Meeting, APS March Meeting 2011, 2011, Dallas, TX, United States
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5a3320d1509dc9a25da817c0ffe480ed
https://hal.archives-ouvertes.fr/hal-00579042
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