Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Nipanka Bora"'
Autor:
Hriday Das, Nipanka Bora
Publikováno v:
2023 4th International Conference on Computing and Communication Systems (I3CS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afca0acba51d931b12de3e20b42dee16
https://doi.org/10.1109/i3cs58314.2023.10127541
https://doi.org/10.1109/i3cs58314.2023.10127541
Autor:
Nipanka Bora
Publikováno v:
Silicon. 14:4945-4954
This paper presents the effects of quantum confinements on the surface potential, threshold voltage, drain current, transconductance, and drain conductance of a Dual Material Double Gate Junctionless Field Effect Nanowire Transistor (DMDG-JLFENT). Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::27cfa915fdbe932e3ffdf32292492ad8
https://doi.org/10.1007/s12633-021-01282-2
https://doi.org/10.1007/s12633-021-01282-2
Publikováno v:
Journal of Nano Research. 65:39-50
This paper presents an analytical model of various electrical parameters for an ultra thin symmetric double gate (SDG) junctionless field effect nanowire transistor (JLFENT). The model works for all the regions of operation of the nanowire transistor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddfaa501876a3faad8b86f02edef3889
https://doi.org/10.4028/www.scientific.net/jnanor.65.39
https://doi.org/10.4028/www.scientific.net/jnanor.65.39
Publikováno v:
Journal of Nano Research. 64:123-134
This paper presents an analytical model for ultra scaled symmetric double gate (SDG) nanowire junctionless field effect transistor (JLFET), which includes charge quantization in all the regions of operation. This model is based on a first-order corre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e9ad7192a6f44ba6d06cbeefbe0d702
https://doi.org/10.4028/www.scientific.net/jnanor.64.123
https://doi.org/10.4028/www.scientific.net/jnanor.64.123
Autor:
Nipanka Bora, Rupaban Subadar
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 14:1283-1289
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74581adedae06ebdf743bbcced9b0d8f
https://doi.org/10.1166/jno.2019.2643
https://doi.org/10.1166/jno.2019.2643
Publikováno v:
Journal of Advanced Physics. 6:408-412
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc9753222c8202ee85dd36f0f85d0e0d
https://doi.org/10.1166/jap.2017.1354
https://doi.org/10.1166/jap.2017.1354
An Analytical Surface Potential Model for Highly Doped Ultrashort Asymmetric Junctionless Transistor
Autor:
Rupaban Subadar, Nipanka Bora
Publikováno v:
Advances in Communication, Devices and Networking ISBN: 9789811334498
Here, we present an analytical solution for surface potential of a heavily doped ultralow channel Double-Gate Asymmetric Junctionless Transistor (DG AJLT). The gate-oxide-thickness and flatband voltage asymmetry were taken into considerations; furthe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39b7e4226526171ea550d5bd8941ac25
https://doi.org/10.1007/978-981-13-3450-4_6
https://doi.org/10.1007/978-981-13-3450-4_6
Publikováno v:
2017 International Conference on Energy, Communication, Data Analytics and Soft Computing (ICECDS).
In this work, performance analysis of sub nanometer asymmetric junctionless transistor has been studied. Lateral offset is present between the gates in the double gate structure. A comprehensive device characteristic including potential variations, d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4aa569d159eec85516e164f980e7180f
https://doi.org/10.1109/icecds.2017.8389672
https://doi.org/10.1109/icecds.2017.8389672
Publikováno v:
2016 IEEE 1st International Conference on Power Electronics, Intelligent Control and Energy Systems (ICPEICES).
In this paper, the effect High Temperature on the performance of a symmetric double gate junctionless transistor based inverter is analyzed. 3D simulations are performed using COGENDA 3D TCAD tool to investigate its switching characteristics, voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::342c5a8b3592dd5ec424e34fbc393fc9
https://doi.org/10.1109/icpeices.2016.7853735
https://doi.org/10.1109/icpeices.2016.7853735
Autor:
Ratul Kr. Baruah, Nipanka Bora
Publikováno v:
Journal of Computational and Theoretical Nanoscience. 8:2025-2028
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::036f6b7f4cccce0ee32f8499791b8f36
https://doi.org/10.1166/jctn.2011.1920
https://doi.org/10.1166/jctn.2011.1920