Zobrazeno 1 - 10
of 131
pro vyhledávání: '"Ninoslav Stojadinovic"'
Publikováno v:
Informacije MIDEM, Vol 50, Iss 3, Pp 205-214 (2020)
Negative bias temperature instability (NBTI) is a phenomenon commonly observed in p-channel metal-oxide semiconductor (MOS) devices simultaneously exposed to elevated temperature and negative gate voltage. This paper studies threshold voltage shift u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8c243ab23052c6ff5bf3fb428c2d93da
https://doi.org/10.33180/infmidem2020.305
https://doi.org/10.33180/infmidem2020.305
Autor:
Zoran Prijić, Ivica Manic, Aneta Prijić, Srboljub Stanković, Vojkan Davidovic, Ninoslav Stojadinovic, Danijel Dankovic, Snezana Djoric-Veljkovic, Snezana Golubovic
Publikováno v:
Microelectronics Reliability. :135-141
In this paper it is shown that NBT stress effects in previously irradiated devices are strongly dependent on the total dose received. Namely, in the case of low-dose irradiation the subsequent NBT stress seems to lead to further device degradation. O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1553e8099f022d3ba5c52370fd73d4ee
https://doi.org/10.1016/j.microrel.2018.07.138
https://doi.org/10.1016/j.microrel.2018.07.138
Autor:
Danijel Dankovic, Albena Paskaleva, Snezana Djoric-Veljkovic, Zoran Prijić, Aneta Prijić, Ivica Manic, Ninoslav Stojadinovic, Vojkan Davidovic, Snezana Golubovic, D. Spassov
Publikováno v:
Microelectronics Reliability. 82:28-36
Negative bias temperature instability (NBTI) is a phenomenon commonly observed in p-channel metal-oxide-semiconductor (MOS) devices simultaneously exposed to negative gate voltage and elevated temperature. In this study we provide overview of thresho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3d77f58abd19394d59cfcfd338d9750
https://doi.org/10.1016/j.microrel.2018.01.003
https://doi.org/10.1016/j.microrel.2018.01.003
Autor:
Danijel Dankovic, Vojkan Davidovic, Srboljub Stanković, Snežana Golubović, Zoran Prijić, Ivica Manic, Ninoslav Stojadinovic, Aneta Prijić, S. Djoric-Veljkovic
Publikováno v:
Facta universitatis - series: Electronics and Energetics. 31:367-388
In this paper we provide an overview of instabilities observed in commercial power VDMOSFETs subjected to irradiation, NBT stress, and to consecutive exposure to them. The results have indicated that irradiation of previously NBT stressed devices lea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ec1764988eda841f7c5afa7a8a6f9b9
https://doi.org/10.2298/fuee1803367d
https://doi.org/10.2298/fuee1803367d
Publikováno v:
IEEE Solid-State Circuits Magazine. 12:96-97
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1da5ef1edb03ac842933c3fe346bbb39
https://doi.org/10.1109/mssc.2019.2951675
https://doi.org/10.1109/mssc.2019.2951675
Autor:
Aleksandar Ilic, Milos Marjanovic, Aneta Prijić, Vojkan Davidovic, Zoran Prijić, Ivica Manic, Ninoslav Stojadinovic, Danijel Dankovic
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 16:522-531
This paper introduces a new experimental approach allowing to investigate the recoverable and permanent components in commercial p-channel power VDMOSFETs subjected to negative bias temperature (NBT) stressing. In many applications, devices can be us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dddbc5a23762fac672a308ee1d6ca9be
https://doi.org/10.1109/tdmr.2016.2598557
https://doi.org/10.1109/tdmr.2016.2598557
Autor:
Zoran Prijić, Ivica Manic, Ninoslav Stojadinovic, Danijel Dankovic, Vojkan Davidovic, Aleksandar Ilic, Snezana Golubovic, Snexana Djoric-Veljkovic
Publikováno v:
IEEE Transactions on Nuclear Science. 63:1268-1275
In this paper, we report the results of consecutive irradiation and negative bias temperature (NBT) stress experiments performed on p-channel power vertical double-diffused metal–oxide semiconductor transistors. The purpose is to examine the effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86aa12b087b7c6501e945c572e8e5965
https://doi.org/10.1109/tns.2016.2533866
https://doi.org/10.1109/tns.2016.2533866
Autor:
Snežana Golubović, Zoran Prijić, Ivica Manic, Danijel Dankovic, S. Djoric-Veljkovic, Vojkan Davidovic, Aneta Prijić, Ninoslav Stojadinovic
Publikováno v:
Facta universitatis-series: Electronics and Energetics (2016) 29(1):49-60
Our recent research of the effects of pulsed bias NBT stressing in p-channel power VDMOSFETs is reviewed in this paper. The reduced degradation normally observed under the pulsed stress bias conditions is discussed in terms of the dynamic recovery ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0168ab1713395cc7e70b9d4bd40510c5
https://doi.org/10.2298/fuee1601049m
https://doi.org/10.2298/fuee1601049m
Publikováno v:
Digital Design and Fabrication ISBN: 9781315222226
Digital Design and Fabrication
Scopus-Elsevier
Digital Design and Fabrication
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6cec8774a927643a6bd486da5fa35fe5
https://doi.org/10.1201/9780849386046-24
https://doi.org/10.1201/9780849386046-24
Publikováno v:
IEEE Solid-State Circuits Magazine. 10:103-104
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15c11cea3187e6e4c14e1789f09729a2
https://doi.org/10.1109/mssc.2018.2821469
https://doi.org/10.1109/mssc.2018.2821469