Zobrazeno 1 - 10
of 78
pro vyhledávání: '"Ningyue Jiang"'
Publikováno v:
Microelectronics Reliability. 91:194-200
Multi-finger silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) are attractive to the radiation-intense environment. This paper investigates the performance of proton-radiated SiGe power HBTs with different finger numbers (8, 24, 40,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e95ae13272df2555c155d97c761aa3b5
https://doi.org/10.1016/j.microrel.2018.10.006
https://doi.org/10.1016/j.microrel.2018.10.006
Autor:
Guoxuan Qin, Yei Hwan Jung, Huilong Zhang, Ningyue Jiang, Pingxi Ma, Scott Stetson, Marco Racanelli, Zhenqiang Ma
Publikováno v:
Advanced Electronic Materials. 8:2101350
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bd3795386dab94ca5fe8422315df06b
https://doi.org/10.1002/aelm.202101350
https://doi.org/10.1002/aelm.202101350
Publikováno v:
Microelectronics Reliability. 53:409-413
Linearity characteristics of common-emitter (CE) and common-base (CB) configuration SiGe HBTs are analyzed and compared under different matching, bias and frequency conditions. Impedance matching is demonstrated to have significant effect on the conf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d0fa0d5d3725f76a9f040e024673386
https://doi.org/10.1016/j.microrel.2012.09.001
https://doi.org/10.1016/j.microrel.2012.09.001
Publikováno v:
Microelectronics Reliability. 52:2568-2571
The radio frequency (RF) characteristics of proton irradiated large-area silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs) at extreme temperatures (liquid nitrogen temperature of 77 K and high temperature of ∼430 K) are reported
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e74f5ec907b11c580167f107051b8eb0
https://doi.org/10.1016/j.microrel.2012.03.027
https://doi.org/10.1016/j.microrel.2012.03.027
Publikováno v:
Semiconductor Science and Technology. 22:S216-S220
In this paper, a comprehensive analytical study on the linearity of both CE and CB SiGe HBTs is presented for the first time. The linearity comparison between CE and CB SiGe HBTs was also made and experimentally verified at 1.9 GHz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ada5a8bbeb535aaecde1ce4a477827b
https://doi.org/10.1088/0268-1242/22/1/s51
https://doi.org/10.1088/0268-1242/22/1/s51
Publikováno v:
Semiconductor Science and Technology. 22:S46-S49
The performance of SiGe HBTs has been dramatically improved due to scaling and device structure optimization. This work reports the proton radiation effects on SiGe power HBTs manufactured in a commercial BiCMOS process. Besides DC and small-signal A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f33d00d3ac1deed1f2e6bee919ce0e67
https://doi.org/10.1088/0268-1242/22/1/s11
https://doi.org/10.1088/0268-1242/22/1/s11
Publikováno v:
ECS Transactions. 3:919-925
The effects of proton irradiation on device modeling of SiGe power HBTs are investigated in this work. On-wafer DC, small- signal AC, linearity and large-signal load-pull measurements were performed before and after proton irradiation. Minor degradat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc0a3af67924bda8cf536cf91b09f911
https://doi.org/10.1149/1.2355886
https://doi.org/10.1149/1.2355886
Publikováno v:
ECS Transactions. 3:249-255
The power gain characteristics of MOSFET under common-source (CS) and common-gate (CG) configurations are analytically studied and verified with simulations using RF MOSFET large- signal models. The substrate parasitic effects on the power gain chara
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01ddf9bc006f123f7efb2e94c2e7b586
https://doi.org/10.1149/1.2355818
https://doi.org/10.1149/1.2355818
Publikováno v:
ECS Transactions. 3:981-987
N-type large gate-width modulation-doped field-effect transistors (MODFETs) are fabricated on Si/SiGe modulation-doped heterostructure with fT and fmax of around 8 GHz and 20 GHz, respectively. These power devices demonstrate 15 to 16 dB power gain a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f58d052feccbe451150c386f5b9f8d91
https://doi.org/10.1149/1.2355892
https://doi.org/10.1149/1.2355892
Publikováno v:
IEEE Transactions on Nuclear Science. 53:2361-2366
The effects of proton irradiation on the RF power performance of SiGe power HBTs are, for the first time, reported in this work. Large emitter area high-power SiGe HBTs fabricated in a commercial BiCMOS process were irradiated with proton, at fluence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78d76f3c6e188dc790e93acb073e2036
https://doi.org/10.1109/tns.2006.879016
https://doi.org/10.1109/tns.2006.879016