Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Ningqi Zhu"'
Autor:
Jianhua Li, Li Zhang, Hao Xing, Yan Geng, Shaocheng Lv, Xiao Luo, Weiqiao He, Zhi Fu, Guangming Li, Bin Hu, Shengran Jiang, Zhe Yang, Ningqi Zhu, Quanbao Zhang, Jing Zhao, Yifeng Tao, Conghuan Shen, Ruidong Li, Feng Tang, Shusen Zheng, Yun Bao, Qiang He, Daoying Geng, Zhengxin Wang
Publikováno v:
Advanced Science, Vol 11, Iss 21, Pp n/a-n/a (2024)
Abstract Tertiary lymphoid structure (TLS) can predict the prognosis and sensitivity of tumors to immune checkpoint inhibitors (ICIs) therapy, whether it can be noninvasively predicted by radiomics in hepatocellular carcinoma with liver transplantati
Externí odkaz:
https://doaj.org/article/8c4d3a88abc742e3b2fca3f7b07e4f2b
Autor:
Ethan Chiu, Mingqi Gao, feng Tian, Wei Feng, Andy Lan, Dan Li, Shengyuan zhong, Aijiao zhu, Ningqi Zhu, yunchen Xu, Jin Zhu, jincheng Pei, Kevin Huang
Publikováno v:
Metrology, Inspection, and Process Control XXXVI.
Autor:
Senmao Zeng, Xue Huang, Tianyu Zhang, Nick Lu, Dean Wu, Yaobin Feng, Jun Wang, Pandeng Xuan, Ningqi Zhu, Cynthia Li, Eric Xiao, Mi Zhang, Jin Zhu, Jincheng Pei, Kevin Huang
Publikováno v:
Metrology, Inspection, and Process Control XXXVI.
Autor:
Chieh-Chen Chiu, feng tian, wei feng, mingqi Gao, Andy lan, shengyuan zhong, chaojen tsou, ningqi zhu, Jin Zhu, jincheng pei, Kevin Huang
Publikováno v:
Metrology, Inspection, and Process Control XXXVI.
Autor:
Jin Zhu, Yaobin Feng, Erik Xiao, Senmao Zeng, Nick Lu, Alex Wang, Pandeng Xuan, Ningqi Zhu, Xue Huang, Yang Kuang, Mi Zhang, Kevin Huang, Dean Wu, JianFeng Li, Jason Pei
Publikováno v:
2021 China Semiconductor Technology International Conference (CSTIC).
In each new generation of 3D NAND devices, a greater number of layers are stacked in a device to increase the bit density. Due to the high aspect ratio of the 3D NAND structure and the etch tilt presence, the overlay for certain layers (such as chann
Autor:
Ningqi Zhu, Jason Pei, Erik Xiao, Haydn Zhou, Miao Bing, Seddy Chu, Xin Li, Jin Zhu, Bob Dong, Leeming Tu, Cynthia Li, Kevin Huang
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV.
In recent years, the pursuit of high storage capacity in 3D-NAND flash devices has driven the addition of more layers to increase the stack height. Challenges arise when etching high aspect ratio memory holes. Due to the existence of a thick and opaq
Autor:
Qi Cheng, Lifeng Tong, Chin-Chou K. Huang, Jian Wang, Ningqi Zhu, Chuanlong Wang, Shengyuan Zhong, Hongbo He, Jason Pei, Haifeng Pu
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV.
Stitching process is a widely adopted technique in manufacturing of image sensors to overcome reticle size limitations. In order to accomplish successful stitching, both standard overlay target data and stitching data from stitching marks need to be